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				Agilent (Hewlett-Packard) HP[Agilent(Hewlett-Packard)]
Part No.	MGS-70008
OCR Text	...sertion Loss: 0.8 dB Typical at 1 GHz * Fast Switching Time: 3 ns Typical * Ultra Low DC Power Consumption * Small Surface-Mount Plastic Pac...13.6 14.7 14.5 14.0 10.2 8.1 1.4 -3.2 -8.5 -13.1 -14.1 7.4 141.4 143.2 129.5 135.9 133.2 129.2 128.5...
Description	Reflective SPDT GaAs MMIC Switch(反射型单刀双掷砷化镓单片式微波集成电路开
File Size	46.82K / 5 Page	View it Online	Download Datasheet

				MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No.	MH16S64BAMD-10 MH16S64BAMD-7 MH16S64BAMD-8 MH16S64BAM
OCR Text	...ank operation controlled by BA0,1(Bank Address) /CAS latency- 2/3(programmable) Burst length- 1/2/4/8/Full Page(programmable) Burst type- se...13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 PIN NAM...
Description	1073741824-BIT (16777216 - WORD BY 64-BIT)SynchronousDRAM
File Size	588.19K / 55 Page	View it Online	Download Datasheet

				MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No.	MH16S64BAMD-6 B99029
OCR Text	1,073,741,824-BIT ( 16,777,216-WORD BY 64-BIT ) Synchronous DYNAMIC RAM PRELIMINARY Some of contents are subject to change without notic...13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 PIN NAM...
Description	From old datasheet system 1,073,741,824-BIT ( 16,777,216-WORD BY 64-BIT ) Synchronous DYNAMIC RAM
File Size	576.78K / 40 Page	View it Online	Download Datasheet

				MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No.	MH16S64DAMD-6 MH16S64DAMD-7 MH16S64DAMD-8 B99056
OCR Text	...ank operation controlled by BA0,1(Bank Address) /CAS latency- 2/3(programmable) Burst length- 1/2/4/8/Full Page(programmable) Burst type- se...13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 PIN NAME V...
Description	From old datasheet system 1073741824-BIT (16777216 - WORD BY 64-BIT)Synchronous DRAM
File Size	710.53K / 55 Page	View it Online	Download Datasheet

				MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No.	MH16S72BAMD-10 MH16S72BAMD-7 MH16S72BAMD-8 B98041_A
OCR Text	...ank operation controlled by BA0,1(Bank Address) /CAS latency- 2/3(programmable) Burst length- 1/2/4/8/Full Page(programmable) Burst type- se...13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 PIN NAME V...
Description	From old datasheet system 1207959552-BIT (16777216 - WORD BY 72-BIT)SynchronousDRAM
File Size	589.26K / 55 Page	View it Online	Download Datasheet

				MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No.	MH16S72BAMD-6 B99030
OCR Text	1,207,959,552-BIT ( 16,777,216-WORD BY 72-BIT ) Synchronous DYNAMIC RAM PRELIMINARY Some of contents are subject to change without notic...13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 PIN NAM...
Description	From old datasheet system 1,207,959,552-BIT ( 16,777,216-WORD BY 72-BIT ) Synchronous DYNAMIC RAM
File Size	579.21K / 40 Page	View it Online	Download Datasheet

				MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No.	MH16S72DAMD-6 MH16S72DAMD-7 MH16S72DAMD-8 B99057
OCR Text	...ank operation controlled by BA0,1(Bank Address) /CAS latency- 2/3(programmable) Burst length- 1/2/4/8/Full Page(programmable) Burst type- se...13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 PIN NAME V...
Description	From old datasheet system 1207959552-BIT (16777216 - WORD BY 72-BIT)Synchronous DRAM
File Size	714.25K / 55 Page	View it Online	Download Datasheet

				Tyco Electronics
Part No.	MRF1000MB
OCR Text	...tch at All Phase Angles with 10:1 VSWR * Industry Standard Package * Nitride Passivated * Gold Metallized, Emitter Ballasted for Long Life a...13 12 CLASS A Pout = 200 mW IC = 100 mA VCE = 18 V 0.05 0.02 0.01 1 2 5 10 20 50 VCE, COLLE...
Description	MICROWAVE POWER TRANSISTORS NPN SILICON
File Size	101.76K / 4 Page	View it Online	Download Datasheet

				Motorola Mobility Holdings, Inc. MOTOROLA[Motorola, Inc]
Part No.	MRF137
OCR Text	...tch At All Phase Angles With 30:1 VSWR * Low Noise Figure -- 1.5 dB (Typ) at 1.0 A, 150 MHz * Excellent Thermal Stability, Ideally Suited Fo...13 -- 50 16 7.7 60 -- -- -- % -- 1.5 -- dB dB Drain Efficiency (Figure 1) (VDD = 28 Vdc, Pout = 3...
Description	N-CHANNEL MOS BROADBAND RF POWER FET UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
File Size	196.56K / 10 Page	View it Online	Download Datasheet

				MOTOROLA[Motorola, Inc]
Part No.	MRF15060 MRF15060S
OCR Text	...ability * Capable of Handling 3:1 VSWR @ 26 Vdc, 1490 MHz, 60 Watts (PEP) Output Power MRF15060 MRF15060S 60 W, 1.49 GHz RF POWER BIPOLA...13 3rd Order Gpe 12 11 IMD 10 9 8 ICQ = 200 mA f1 = 1490.0 MHz f2 = 1490.1 MHz 18 20 22 24 26 VCC, S...
Description	RF POWER BIPOLAR TRANSISTORS
File Size	162.37K / 8 Page	View it Online	Download Datasheet

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