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For 100-w Found Datasheets File :: 280282    Search Time::2.421ms    
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    2SB1025

Hitachi Semiconductor
Part No. 2SB1025
OCR Text ...E = I E = -10 A, IC = 0 VCB = -100 V, IE = 0 VCE = -5 V, IC = -150 mA VCE = -5 V, I C = -500 mA (Pulse test) V V MHz pF I C = -500 mA...W) (on the alumina ceramic board) Collector Current IC (A) Typical Output Characteristics -1.0 0 -1...
Description Silicon PNP Epitaxial

File Size 32.26K  /  6 Page

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    2SB1026

HITACHI[Hitachi Semiconductor]
Part No. 2SB1026
OCR Text ...* Tj Tstg 2 1 Ratings -120 -100 -5 -1 -2 1 150 -55 to +150 Unit V V V A A W C C Notes: 1. PW 10 ms, Duty cycle 20% 2. Value on the alumina ceramic board (12.5 x 20 x 0.7 mm) Electrical Characteristics (Ta = 25C) Item Collect...
Description Silicon PNP Epitaxial

File Size 24.16K  /  5 Page

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    2SB1027

HITACHI[Hitachi Semiconductor]
Part No. 2SB1027
OCR Text ...FE1 as follows. EH 60 to 120 EJ 100 to 200 EK 160 to 320 2 2SB1027 Typical Output Characteristics Maximum Collector Dissipation Curve 1.2 Collector Power Dissipation Pc (W) (on the alumina ceramic board) Collector Current IC (A) -1.0...
Description Silicon PNP Transistor
Silicon PNP Epitaxial

File Size 29.73K  /  6 Page

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    2SB1028

HITACHI[Hitachi Semiconductor]
Part No. 2SB1028
OCR Text ...FE1 as follows. EL 60 to 120 EM 100 to 200 2 2SB1028 Maximum Collector Dissipation Curve 1.2 Collector Power Dissipation PC (W) (on the alumina ceramic board) Collector Current IC (A) Typical Output Characteristics -1.0 -5 .0 .0 -4...
Description Silicon PNP Epitaxial

File Size 30.14K  /  6 Page

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    2SB1032 2SB1032K

HITACHI[Hitachi Semiconductor]
Part No. 2SB1032 2SB1032K
OCR Text ... -- -- -- -- 0.8 4.0 Max -- -- -100 -10 20000 -1.5 -3.0 -2.0 -3.5 3.0 -- -- V V V V V s s Unit V V A A Test conditions I C = -25 mA, RBE = ...W) -30 -10 -3 DC Area of Safe Operation iC (peak) 0 10 1 s Collector Current IC (A) 80...
Description Silicon PNP Triple Diffused

File Size 35.68K  /  6 Page

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    2SB1033

WINGS[Wing Shing Computer Components]
Part No. 2SB1033
OCR Text ...VCE= -2V , IC=-0.5A Min Typ Max 100 100 120 1.0 8 V MHZ Unit A A Wing Shing Computer Components Co., (H.K.)Ltd. Homepage: http://www.wingshing.com Tel:(852)2341 9276 Fax:(852)2797 8153 E-mail: wsccltd@hkstar.com
Description PNP EPITAXIAL SILICON TRANSISTOR(LOW FREQUENCY POWER AMPLIFIER)

File Size 68.29K  /  1 Page

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    2SB1048

HITACHI[Hitachi Semiconductor]
Part No. 2SB1048
OCR Text ... 1 Shot Pulse 0.4 0 50 100 150 Ambient Temperature Ta (C) -10 -30 -100 -300 Collector to Emitter Voltage VCE (V) Typical Outp...W -0.4 -0.04 m -0.02 m -0.2 -0.01 m IB = 0 A 0 -2 -4 -6 -8 -10 Collector to Emi...
Description Silicon PNP Epitaxial/ Darlington
Silicon PNP Epitaxial, Darlington

File Size 31.00K  /  6 Page

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    2SB1050

PANASONIC[Panasonic Semiconductor]
Part No. 2SB1050
OCR Text ...bsolute Maximum Ratings max -100 -100 4.10.2 Low collector to emitter saturation voltage VCE(sat). Large collector current IC. M ty...W) 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0 20 Collector current IC (A) Collector current IC (A) ...
Description Silicon PNP epitaxial planer type(For low-frequency amplification)

File Size 36.25K  /  2 Page

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    2SB1059 2SB1059C

HITACHI[Hitachi Semiconductor]
Rohm Co., Ltd.
Part No. 2SB1059 2SB1059C
OCR Text ...ctor output capacitance Note: B 100 to 200 C 160 to 320 V(BR)EBO I CBO I EBO hFE* 100 -- -- -- VCE(sat) fT Cob V MHz pF I C = -1...W) 0.8 0.4 0 50 100 150 Ambient Temperature Ta (C) 3 Unit: mm 4.8 0.3 3.8 ...
Description SMALL SIGNAL TRANSISTOR, TO-92
Silicon PNP Epitaxial
TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 1A I(C) | TO-92 晶体管|晶体管|进步党| 50V五(巴西)总裁| 1A条一(c)|2

File Size 16.80K  /  4 Page

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    2SB1071 2SB1071A

PANASONIC[Panasonic Semiconductor]
Part No. 2SB1071 2SB1071A
OCR Text ... -6 IB=-80mA VCE(sat) IC -100 TC=25C IC/IB=20 Collector power dissipation PC (W) -5 Collector current IC (A) 30 -4 -50mA -45mA -40mA -35mA -10 20 (1) -3 -30mA -25mA -20mA -1 TC=100C 25C -25C ...
Description Silicon PNP epitaxial planar type

File Size 83.97K  /  4 Page

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