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  11.70-12.70 Datasheet PDF File

For 11.70-12.70 Found Datasheets File :: 179945    Search Time::5.297ms    
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    Maxim Integrated Products, Inc.
Part No. DS1230YL-70 DS1230Y-FIR
OCR Text ...ic.com 13 1 2 3 4 5 6 7 8 9 10 11 12 14 27 28-pin encapsulated package 740-mil extended a14 a7 a5 a4 a3 a2 a1 a0 dq1 dq0 v cc we a 13 ...70 ds1230y-70 ds1230ab-85 ds1230y-85 ds1230ab-100 ds1230y-100 parameter symbol min max min ma...
Description 32K X 8 NON-VOLATILE SRAM MODULE, 70 ns, DMA34 POWERCAP MODULE-34
256k Nonvolatile SRAM 32K X 8 NON-VOLATILE SRAM MODULE, DMA34

File Size 293.53K  /  16 Page

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    BLF1820-70 BLF1820-70_2

NXP Semiconductors N.V.
Philips Semiconductors
Part No. BLF1820-70 BLF1820-70_2
OCR Text ...-302B. PL (W) 65 (PEP) Gp (dB) >11 D (%) >30 dim (dBc) -25 Fig.1 Simplified outline SOT502A. 2003 Feb 10 2 Philips Semiconductor...70 MAX. 65 15 9 +150 200 V V A UNIT C C THERMAL CHARACTERISTICS SYMBOL Rth j-h Note 1. D...
Description From old datasheet system
UHF power LDMOS transistor

File Size 98.58K  /  12 Page

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    Maxim Integrated Products, Inc.
Part No. DS1330YP-70-IND
OCR Text 11 032904 features 10 years minimum data retention in the absence of external power data is automatically ...70 ds1330y-70 ds1330ab-100 ds1330y-100 parameter symbol min max min max units notes read cycle...
Description 32K X 8 NON-VOLATILE SRAM MODULE, 70 ns, DMA34 POWERCAP MODULE-34

File Size 226.44K  /  11 Page

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    DS1330YP-70 DS1330ABP-70-IND

Maxim Integrated Products, Inc.
DALLAS SEMICONDUCTOR
Part No. DS1330YP-70 DS1330ABP-70-IND
OCR Text 11 111999 features 10 years minimum data retention in the absence of external power data is automatically protected during power los...70 ns unlimited write cycle endurance typical standby current 50 a upgrade for 32k x 8...
Description 256k Nonvolatile SRAM with Battery Monitor 32K X 8 NON-VOLATILE SRAM MODULE, 70 ns, DMA34
32K X 8 NON-VOLATILE SRAM MODULE, 70 ns, DMA34 POWERCAP MODULE-34

File Size 219.57K  /  11 Page

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    Maxim Integrated Products, Inc.
Part No. DS1345YL-70-IND DS1345YP-70IND DS1345ABP-70IND
OCR Text ...1 dq0 gnd 4 5 6 7 8 9 10 11 12 13 14 15 16 17 nc a 14 33 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 a 13 a 12 a 11 a 10 a 9 ...70 ds1345y-70 ds1345ab-100 ds1345y-100 parameter symbol min max min max units notes read cycle...
Description 128K X 8 NON-VOLATILE SRAM MODULE, 70 ns, PDSO34 LOW PROFILE, SMT-34
1024k Nonvolatile SRAM with Battery Monitor 128K X 8 NON-VOLATILE SRAM MODULE, 70 ns, DMA34

File Size 280.26K  /  14 Page

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    MBM29DL64DF-70 MBM29DL64DF70TN

Fujitsu, Ltd.
Fujitsu Component Limited.
Part No. MBM29DL64DF-70 MBM29DL64DF70TN
OCR Text ...48p-m19) a 15 a 14 a 13 a 12 a 11 a 10 a 9 a 8 a 19 a 20 we reset a 21 wp/acc ry/by a 18 a 17 a 7 a 6 a 5 a 4 a 3 a 2 a 1 1 2 3 4 5 6 7 8 9...70 6 (continued) n pin descriptions pin function a 21 to a 0 , a -1 address input dq 15 to dq 0 ...
Description FLASH MEMORY CMOS 64 M (8 M X 8/4 M X 16) BIT 闪存的CMOS 64米(8的MX 8 / 4的MX 16)位

File Size 300.95K  /  68 Page

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    SIEMENS A G
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
Part No. HYM361140GS-70 HYM361140GS-60 HYM361140S-70 HYM361140S-60 HYM361120GS-70 HYM361120GS-60 HYM361120-70 HYM361120-60 Q67100-Q960 Q67100-Q741 Q67100-Q1019 Q67100-Q961 HYM361120 HYM361120S-60 HYM361120S-70 Q67100-Q651 Q67100-Q942 Q67100-Q958 Q67100-Q959
OCR Text ...lse width (fast page mode) 6) 11) 12) 6) 11) Unit HYM 361120/40S/GS-70 min. 130 45 - - - - 0 0 3 50 70 70 40 20 70 20 20 15 5 10 0 10 0 15 max. - - 70 20 35 40 - 20 50 - 10000 200000 - - - 10000 50 35 - - - - - - ns ns ns ns ns ns n...
Description 1M x 36-Bit Dynamic RAM Module (2M x 18-Bit Dynamic RAM Module) 100万36位动态RAM模块米18位动态随机存储器模块
1M x 36-Bit Dynamic RAM Module (2M x 18-Bit Dynamic RAM Module) 1M X 36 FAST PAGE DRAM MODULE, 60 ns, SMA72
1M x 36-Bit Dynamic RAM Module (2M x 18-Bit Dynamic RAM Module) 1M X 36 FAST PAGE DRAM MODULE, 70 ns, SMA72

File Size 134.50K  /  9 Page

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    WS128K32-70

White Electronic Designs Corporation
Part No. WS128K32-70
OCR Text ...0 i/o 1 i/o 2 we 2 cs 2 gnd i/o 11 a 10 a 11 a 12 v cc cs 1 nc i/o 3 i/o 15 i/o 14 i/o 13 i/o 12 oe nc we 1 i/o 7 i/o 6 i/o 5 i/o 4 i/o 24 i...70 -85 -100 -120 units min max min max min max min max input leakage current i li v cc = 5.5, v in ...
Description 128Kx32 SRAM Module(128Kx32静态RAM模块(存取时0ns

File Size 206.60K  /  10 Page

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    M85049-24-70 M85049-24-71 M85049-24-72 M85049-24-73 M85049-24-74 M85049-24-75 M85049-24-60 M85049-24-61 M85049-24-62 M85

Glenair, Inc.
Part No. M85049-24-70 M85049-24-71 M85049-24-72 M85049-24-73 M85049-24-74 M85049-24-75 M85049-24-60 M85049-24-61 M85049-24-62 M85049-24-63 M85049-24-64 M85049-24-65 M85049-24-66 M85049-24-67 M85049-24-68 M85049-24-69 M85049-24-30 M85049-24-31 M85049-24-32 M85049-24-33 M85049-24-34 M85049-24-35 M85049-24-36 M85049-24-37 M85049-24-38 M85049-24-39 M85049-24-10 M85049-24-11 M85049-24-12 M85049-24-13 M85049-24-14 M85049-24-15 M85049-24-16 M85049-24-17 M85049-24-18 M85049-24-19 M85049-24-50 M85049-24-20 M85049-24-21 M85049-24-22 M85049-24-23 M85049-24-24 M85049-24-25 M85049-24-26 M85049-24-27 M85049-24-28 M85049-24-29 M85049-24-40 M85049-24-41 M85049-24-42 M85049-24-43 M85049-24-44 M85049-24-45 M85049-24-46 M85049-24-47 M85049-24-48 M85049-24-49 M85049-24-51 M85049-24-52 M85049-24-53 M85049-24-54 M85049-24-55 M85049-24-56 M85049-24-57 M85049-24-58 M85049-24-59 M85049-24-01 M85049-24-02 M85049-24-03 M85049-24-04 M85049-24-05 M85049-24-06 M85049-24-07 M85049-24-08 M85049-24-09
OCR Text ...) EN 2997, EN 3646, ESC 10, ESC 11, LN 29504, NFC93422 Series HE302, PAN 6432-1, PAN 6432-2, PATT 602 Superceded Part Number MS3188C 21 N...70 71* 72* 73* 74 75 Shell Size 28 32 32 32 36 36 36 40 40 40 44 44 44 48 48 48 61 61 16 18 18 20 22...
Description EMI/RFI Non-Environmental Backshells

File Size 97.18K  /  2 Page

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    Infineon
SIEMENS[Siemens Semiconductor Group]
Part No. HYB5118165BSJ-70 HYB5118165BSJ-60 HYB5118165BSJ-50 HYB5116165BSJ-70 HYB5116165BSJ-60 HYB5116165BSJ-50 HB18165B HYB5116165BJ-50 HYB5116165BJ-60 HYB5116165BJ-70 HYB5116165BSJ-50- Q67100-Q1109 HYB5118165BJ-50 HYB5118165BJ-60 HYB5118165BJ-70 Q67100-Q1107 Q67100-Q1108
OCR Text ...0 active mW ( HYB5116165BSJ-70) 11 mW standby (TTL) 5.5. mW standby (MOS) Output unlatched at cycle end allows two-dimensional chip selection Read, write, read-modify-write, CAS-before-RAS refresh, RAS-only refresh, hidden refresh and Self ...
Description -1M x 16-Bit Dynamic RAM 1k & 4k Refresh
1M x 16-Bit Dynamic RAM 1k & 4k Refresh (Hyper Page Mode- EDO)
From old datasheet system

File Size 267.19K  /  26 Page

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