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  12.4-18ghz Datasheet PDF File

For 12.4-18ghz Found Datasheets File :: 293    Search Time::1.375ms    
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    EPA240B

Excelics Semiconductor, Inc.
Part No. EPA240B
OCR Text ...10.5 8.0 10.5 12.0 9.5 db pae gain at 1db compression vds=8v, ids=50% idss f=12ghz 44 ...4 ma -11 -15 -11 -15 v bvgs source breakdown voltage igs=2.4ma -7 -14 -7 -14 v ...
Description 8-12V high efficiency heterojunction power FET

File Size 34.15K  /  2 Page

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    TC1101

List of Unclassifed Manufacturers
ETC[ETC]
Part No. TC1101
OCR Text ... Figure: NF = 0.5 dB Typical at 12 GHz High Associated Gain: Ga = 12 dB Typical at 12 GHz High Dynamic Range: 1 dB Compression Power P-1 = 1...4 V, IDS = 25 mA Linear Power Gain, f = 12GHz VDS = 4 V, IDS = 25 mA Saturated Drain-Source Current ...
Description Low Noise and Medium Power GaAs FETs

File Size 149.21K  /  6 Page

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    CHA3023 CHA3023-99F

United Monolithic Semiconductors
Part No. CHA3023 CHA3023-99F
OCR Text ...se figure Bias current 95 Min 1 12.5 14 4 dB mA Typ Max 18 Unit GHz ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions ! DSCHA30235263 - 20 sep 05 1/8 Specifications subject to change without...
Description 1-18 GHz WIDE BAND AMPLIFIER

File Size 385.94K  /  8 Page

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    TC2201

List of Unclassifed Manufacturers
ETC[ETC]
TRANSCOM
Part No. TC2201
OCR Text 12/2004 Plastic Packaged Low Noise PHEMT GaAs FETs FEATURES * * * * * * * 1.5 dB Typical Noise Figure at 12 GHz High Associated Gain: Ga ...4 V, IDS = 25 mA, f = 12GHz Associated Gain at VDS = 4 V, IDS = 25 mA, f = 12GHz Output Power at 1dB...
Description Plastic Packaged Low Noise PHEMT GaAs FETs

File Size 130.71K  /  4 Page

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    TRIQUINT[TriQuint Semiconductor]
Part No. TGF2022-06
OCR Text ...G MAG 15 10 5 0 0 2 4 6 8 10 12 14 16 Frequency (GHz) Note: This device is early in the characterization process prior to finalizing all electrical specifications. Specifications are subject to change without notice. TriQuint Se...
Description DC - 20 GHz Discrete power pHEMT

File Size 210.63K  /  10 Page

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    CHA2290

United Monolithic Semiconductors
Part No. CHA2290
OCR Text ...n & NF 28 26 24 22 20 18 16 14 12 10 8 6 4 2 0 10 1 2 Main Features * * * * * * Frequency range : 10 -18GHz 2.2dB Noise Figure. 25dB gain Gain control range: 25dB DC power consumption: 180mA @ 5V Chip size : 2.49 X 1.23 X 0.10 mm Ga...
Description 10-18GHz Low Noise, Variable Gain Amplifier

File Size 125.01K  /  8 Page

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    CHP4511

United Monolithic Semiconductors
Part No. CHP4511
OCR Text ... -7 -15 13 15 35 -1.5 / +2.5 10 12 Conditions Min 6 0 Max 18 360 Unit GHz deg. deg dB dB dB dB dB dB dBm dBm Parameter ...4-bit phase shifter is controlled by 5 voltages: State 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 TOTAL ...
Description 6-18GHz Phase-shifter

File Size 680.42K  /  8 Page

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    CHA2291 CHA2291-99F_00 CHA229107

United Monolithic Semiconductors
Part No. CHA2291 CHA2291-99F_00 CHA229107
OCR Text ...0.10 mm 26 24 22 20 18 16 14 12 10 8 6 4 2 0 10 Gain (dB) NF (dB) 11 12 13 14 Frequency (GHz) 15 16 17 18 Typical on wafer measurements : Gain & NF Main Characteristics Tamb. = 25 C Symbol Fop G NF ...
Description 10-18GHz Low Noise, Variable Gain Amplifier

File Size 409.82K  /  8 Page

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    Excelics Semiconductor
Part No. EPA160A
OCR Text ...1 0.02 8 35.6 0.52 6 -166.2 12.0 0.92 1 -175.9 1.31 6 40. 9 0.02 9 36.4 0.53 8 -168.1 13.0 0.92 9 -176.3 1.20 2 36. 6 0.02 9 36.0 0.55 3 -170.8 14.0 0.92 9 -176.6 1.09 6 32. 2 0.03 0 36.4 0.56 4 -174.4 15.0 0.93 4 -17...
Description 8-12V high efficiency heterojunction power FET

File Size 27.42K  /  2 Page

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    EPA040A-70

Excelics Semiconductor
List of Unclassifed Manufacturers
ETC[ETC]
Electronic Theatre Controls, Inc.
Part No. EPA040A-70
OCR Text ...0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 14.0 15.0 16.0 17.0 18.0 19.0 20.0 21.0 22.0 23.0 24.0 25.0 26.0 --- S11 --MAG ANG 0.948 -35.2 0.846 -66.9 0.753 -93.4 0.676 -118.2 0.620 -140.9 0.584 -158.2 0.552 -177.3 0.527 165.1 0.540 139.6 0.5...
Description 6-10V high efficiency heterojunction power FET

File Size 18.77K  /  2 Page

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