2-10u1b pdf Datasheet P8 Full Text Search --- IC-ON-LINE


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2-10u1b Datasheet PDF File

For 2-10u1b Found Datasheets File :: 159 Search Time::0.985ms
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				Toshiba
Part No.	TK10A60D
OCR Text	... 600 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25C) Characteristics Drain-source vo...10U1B Drain power dissipation (Tc = 25C) Single pulse avalanche energy (Note 2) Avalanche current...
Description	Field Effect Transistor
File Size	186.05K / 6 Page	View it Online	Download Datasheet

				Toshiba
Part No.	K10A60D
OCR Text	... 600 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25C) Characteristics Drain-source vo...10U1B Drain power dissipation (Tc = 25C) Single pulse avalanche energy (Note 2) Avalanche current...
Description	Search --To TK10A60D
File Size	178.18K / 6 Page	View it Online	Download Datasheet

				Toshiba Semiconductor
Part No.	2SK401410
OCR Text	2SK4014 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (-MOSIV) 2SK4014 DC-DC Converter, Relay Drive and Motor Drive Applic...10U1B Weight: 1.7 g (typ.) Note: Using continuously under heavy loads (e.g. the application of...
Description	DC-DC Converter, Relay Drive and Motor Drive
File Size	227.52K / 6 Page	View it Online	Download Datasheet

				Toshiba Semiconductor
Part No.	2SK374209
OCR Text	2SK3742 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (-MOSIV) 2SK3742 Switching Regulator Applications * * * * Low drain...10U1B Weight: 1.7 g (typ.) Note: Using continuously under heavy loads (e.g. the application of...
Description	Switching Regulator Applications
File Size	189.27K / 6 Page	View it Online	Download Datasheet

				Toshiba Semiconductor
Part No.	K3757
OCR Text	2 toshiba field effect transistor silicon n-channel mos type ( -mosvi) 2sk3757 switching regulator applications ? low drain-...10u1b weight: 1.7 g (typ.) 1: gate 2: drain 3: source 2sk3757 2006-11-06 2 electrical cha...
Description	Search --To 2SK3757
File Size	279.52K / 6 Page	View it Online	Download Datasheet

				Toshiba Semiconductor
Part No.	K3767
OCR Text	...) ? enhancement mode: v th = 2.0 to 4.0 v (v ds = 10 v, i d = 1 ma) maximum ratings (ta = 25c) characteristics symbol rating un...10u1b weight : 1.7 g (typ.) 1 3 2 datasheet4u.com datasheet4u.com datasheet4u.com 4 .com ...
Description	Search --To 2SK3767
File Size	415.35K / 6 Page	View it Online	Download Datasheet

				Toshiba Semiconductor
Part No.	K3797
OCR Text	... ? enhancement model: v th = 2.0~4.0 v (v ds = 10 v, i d = 1 ma) absolute maximum ratings (ta = 25c) characteristic symbol ...10u1b weight: 1.7 g (typ.) 1 3 2 2sk3797 2006-11-08 2 electrical characteristics (ta = 2...
Description	Search --To 2SK3797
File Size	238.92K / 6 Page	View it Online	Download Datasheet

				Toshiba Semiconductor
Part No.	K3934
OCR Text	...fer admittance: \| y fs \| = 8.2 s (typ.) low leakage current: i d ss = 100 ? a (v ds = 500 v) enhancement - mode: v th ...10u1b weight : 1.7 g (typ.) 1 3 2 2sk3934 2004 - 12 - 03 2 electrical characte...
Description	Search --To 2SK3934
File Size	105.22K / 6 Page	View it Online	Download Datasheet

				Toshiba Semiconductor
Part No.	TK12A60U
OCR Text	... pulse avalanche energy (note 2) e as 69 mj avalanche current (note 3) i ar 12 a repetitive avalanche energy e ar 3.5 mj channel...10u1b weight : 1.7 g (typ.) 1 3 2 1: gate 2: drain 3: source www.datasheet.in tk12a60u 200...
Description	Field Effect Transistor Silicon N-Channel MOS Type
File Size	196.07K / 6 Page	View it Online	Download Datasheet

				Toshiba Semiconductor
Part No.	K12A60U
OCR Text	... pulse avalanche energy (note 2) e as 69 mj avalanche current (note 3) i ar 12 a repetitive avalanche energy e ar 3.5 mj channel...10u1b weight : 1.7 g (typ.) 1 3 2 1: gate 2: drain 3: source tk12a60u 2009-09-29 2 elect...
Description	Search --To TK12A60U
File Size	201.31K / 6 Page	View it Online	Download Datasheet

For 2-10u1b Found Datasheets File :: 159 Search Time::0.985ms
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