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JIANGSU[Jiangsu Changjiang Electronics]
江苏长电科技股份有限公司
Jiangsu Changjiang Electronics Technology Co., Ltd.
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| Part No. |
BAT43WS-SOD-323 BAT42WS BAT43WS
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| OCR Text |
...V A pF ns Conditions IR=100A IF=200mA IF=10mA IF=50mA IF=2mA IF=15mA VR=25V VR=1.0V,f=1.0MHz IF=IR=10mA Irr=0.1XIR,RL=100
Typical Characteristics
BAT42WS/BAT43WS
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| Description |
SCHOTTKY DIODES 肖特基二极管
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| File Size |
129.57K /
2 Page |
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DIODES[Diodes Incorporated]
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| Part No. |
BAV3004WS-7 BAV3004WS
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| OCR Text |
...150mA IF = 20mA IF = 100mA IF = 200mA VR = 240V, Tj = 25C VR = 240V, Tj = 150C VR = 0, f = 1.0MHz IF = IR = 30mA, Irr = 3.0mA, RL = 100W
1. Part mounted on FR-4 PC board with recommended pad layout, which can be found on our website at h... |
| Description |
SURFACE MOUNT LOW LEAKAGE DIODE
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| File Size |
334.23K /
3 Page |
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it Online |
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NIEC[Nihon Inter Electronics Corporation]
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| Part No. |
DMB200B12
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| OCR Text |
...CE=0V IC=200A,VGE=15V VCE=5V,IC=200mA VCE=10V,VGE=0V,f=1MHz VCC= 600V RL= 3 ohm RG= 2 ohm VGE= +/- 15V
Min.
4.0 -
Typ.
1.9 16600 0.2...IFM 200 400
Unit A Typ.
1.9 0.2
Characteristic
Peak Forward Voltage Reverse Recovery Time
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| Description |
IGBT MODULE Dual 200A 1200V
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| File Size |
115.30K /
3 Page |
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it Online |
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FAIRCHILD[Fairchild Semiconductor]
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| Part No. |
FM2G150US60
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| OCR Text |
...aturation Voltage IC = 0V, IC = 200mA IC = 150A, VGE = 15V 5.0 --2.2 8.5 2.8 V V
Dynamic Characteristics
Cies Coes Cres Input Capacitance Output Capacitance Reverse Transfer Capacitance VCE = 30V, VGE = 0V, f = 1MHz ---12840 1400 354 --... |
| Description |
IGBT
Molding Type Module
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| File Size |
685.34K /
9 Page |
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it Online |
Download Datasheet |
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FAIRCHILD[Fairchild Semiconductor]
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| Part No. |
FM2G200US60
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| OCR Text |
...Saturation Voltage IC = 0V, IC= 200mA IC = 200A, VGE = 15V 5.0 --2.2 8.5 2.8 V V
Dynamic Characteristics
Cies Coes Cres Input Capacitance Output Capacitance Reverse Transfer Capacitance VCE = 30V, VGE = 0V, f = 1MHz ---14600 2170 500 --... |
| Description |
IGBT
Molding Type Module
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| File Size |
699.17K /
9 Page |
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it Online |
Download Datasheet |
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FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor Corporation
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| Part No. |
FM2G300US60
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| OCR Text |
...aturation Voltage IC = 0V, IC = 200mA IC = 300A, VGE = 15V 5.0 --2.2 8.5 2.8 V V
Dynamic Characteristics
Cies Coes Cres Input Capacitance Output Capacitance Reverse Transfer Capacitance VCE = 30V, VGE = 0V, f = 1MHz ---14600 2170 500 --... |
| Description |
IGBT
Molding Type Module
Sweep Function Generator; Bandwidth Max:12MHz; Frequency Max:12MHz; Frequency Min:0.1Hz; Waveforms:Sine, Square, Triangle, Ramp, Pulse RoHS Compliant: NA
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| File Size |
694.15K /
9 Page |
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it Online |
Download Datasheet |
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FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor Corporation
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| Part No. |
FMBL1G200US60
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| OCR Text |
...Saturation Voltage IC = 0V, IC= 200mA IC = 200A, VGE = 15V 5.0 --2.2 8.5 2.8 V V
Dynamic Characteristics
Cies Coes Cres Input Capacitance Output Capacitance Reverse Transfer Capacitance VCE = 30V, VGE = 0V, f = 1MHz ---14600 2170 500 --... |
| Description |
IGBT
Molding Type Module
10MHz DDS Sweep Function Generator; Bandwidth Max:10MHz; Sweep Rate Range:100:1 lin/log; Sweep Time Range:10 mSec to 30 Sec; Frequency Max:10MHz; Frequency Min:0.01Hz RoHS Compliant: NA
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| File Size |
698.50K /
9 Page |
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it Online |
Download Datasheet |
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FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor Corporation
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| Part No. |
FMBL1G300US60
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| OCR Text |
...aturation Voltage IC = 0V, IC = 200mA IC = 300A, VGE = 15V 5.0 --2.2 8.5 2.8 V V
Dynamic Characteristics
Cies Coes Cres Input Capacitance Output Capacitance Reverse Transfer Capacitance VCE = 30V, VGE = 0V, f = 1MHz ---14600 2170 500 --... |
| Description |
IGBT
Molding Type Module
BK Precision Sweep/Function Generators, Waveforms: Sine, Square, Triangle, /- Pulse, /- Ramp, Frequency Range: .2 Hz-20 MHz, Resolution: 5 Digits, Tuning Range: 10:1, Impedance: 50 Ohm, Attenuation: -20 /-1 dB
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| File Size |
691.70K /
9 Page |
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it Online |
Download Datasheet |
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KEC[KEC(Korea Electronics)]
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| Part No. |
KTX303U
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| OCR Text |
...R CT IF=1mA IF=10mA IF=100mA IF=200mA VR=30V VR=0, f=1 TEST CONDITION MIN. TYP. 0.22 0.29 0.38 0.43 50 MAX. 0.55 50 V UNIT
2003. 3. 11
Revision No : 1
2/4
KTX303U
Q 1 (PNP TRANSISTOR)
h FE - I C
COLLECTOR-EMITTER SATURATI... |
| Description |
EPITAXIAL PLANAR PNP TRANSISTOR SCHOTTKY BARRIER TYPE DIODE (SWITCHING, LOW VOLTAGE HIGH SPEED SWITCHING)
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| File Size |
401.43K /
4 Page |
View
it Online |
Download Datasheet |
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Price and Availability
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