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Advanced Power Electron...
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Part No. |
AP4N4R2H
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OCR Text |
...in-source leakage current v ds =32v, v gs =0v - - 10 ua i gss gate-source leakage v gs = + 20v, v ds =0v - - + 100 na q g total gate charge i d =30a - 28 44.8 nc q gs gate-source charge v ds =32v - 7 - nc q gd gate-drain ("miller") charge v... |
Description |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
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File Size |
108.34K /
6 Page |
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it Online |
Download Datasheet
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Advanced Power Electron...
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Part No. |
AP4N3R6H
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OCR Text |
...in-source leakage current v ds =32v, v gs =0v - - 10 ua i gss gate-source leakage v gs = + 20v, v ds =0v - - + 100 na q g total gate charge i d =40a - 121 194 nc q gs gate-source charge v ds =32v - 15 - nc q gd gate-drain ("miller") charge ... |
Description |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
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File Size |
107.38K /
6 Page |
View
it Online |
Download Datasheet
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Advanced Power Electron...
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Part No. |
AP4N3R2I
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OCR Text |
...in-source leakage current v ds =32v, v gs =0v - - 10 ua i gss gate-source leakage v gs = + 20v, v ds =0v - - + 100 na q g total gate charge i d =40a - 91 145.6 nc q gs gate-source charge v ds =32v - 19 - nc q gd gate-drain ("miller") charge... |
Description |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
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File Size |
105.68K /
6 Page |
View
it Online |
Download Datasheet
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