4banks pdf Datasheet P8 Full Text Search --- IC-ON-LINE


	Part Number	Hot Search : HT656 MAX31 MMT3903 1XS41D BH7760KV MDT10P23 K2700 N5364BR
	Product Description
	Full Text Search

4banks Datasheet PDF File

For 4banks Found Datasheets File :: 1003 Search Time::2.313ms
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | <8> | 9 | 10 | 11 | 12 | 13 | 14 | 15 |

				Samsung semiconductor
Part No.	KM48S16030BT-G_FA KM48S16030BT-G_FH KM48S16030BT-G_FL
OCR Text	...are stable IO = 0 mA Page burst 4banks Activated tCCD = 2CLKs tRC tRC(min) CKE 0.2V G F Test Condition -A Operating current (One bank active) Precharge standby current in power-down mode ICC1 ICC2P ICC2PS ICC2N Precharge standby current i...
Description	128Mbit SDRAM 4M x 8Bit x 4 Banks Synchronous DRAM LVTTL
File Size	89.50K / 11 Page	View it Online	Download Datasheet

				ETC[ETC]
Part No.	AD484M1644VTA AD484M1644VTA-10I AD484M1644VTA-10L AD484M1644VTA-10LI AD484M1644VTA-8I AD484M1644VTA-8L AD484M1644VTA-8LI AD484M1644VTA-6 AD484M1644VTA-7L AD484M1644VTA-7I AD484M1644VTA-7 AD484M1644VTA-5.5 AD484M1644VTA-15 AD484M1644VTA-7LI
OCR Text	...emiconductor Corporation 64Mb( 4banks ) Synchronous DRAM AD484M1644VTA ( 4Mx16 ) Description 64Mb SDRAM The AD484M1644VTA is Synchronous Dynamic Random Access Memory ( SDRAM ) organized as 1,048,756 words x 4 banks x 16 bits. All in...
Description	Ascend Semiconductor Corporation(64Mb SDRAM)
File Size	83.40K / 20 Page	View it Online	Download Datasheet

				HYNIX[Hynix Semiconductor]
Part No.	HY5DU121622C HY5DU12822CTP-X HY5DU121622CTP-X HY5DU121622CLTP HY5DU121622CLTP-X HY5DU12422C HY5DU12422CLTP HY5DU12822CTP HY5DU121622CTP HY5DU12422CLTP-X HY5DU12422CTP HY5DU12422CTP-X HY5DU12822C HY5DU12822CLTP HY5DU12822CLTP-X
OCR Text	...e Flag Refresh 128Mx4 32M x 4 x 4banks A0 - A12 A0-A9, A11, A12 BA0, BA1 A10 8K 64Mx8 16M x 8 x 4banks A0 - A12 A0-A9, A11 BA0, BA1 A10 8K 32Mx16 8M x 16 x 4banks A0 - A12 A0-A9 BA0, BA1 A10 8K Rev. 1.0 / Mar. 2005 4 HY5DU12822C(L)...
Description	512Mb DDR SDRAM
File Size	242.16K / 31 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
Part No.	K4S283233F K4S283233F-C K4S283233F-F1H K4S283233F-F1L K4S283233F-F60 K4S283233F-F75 K4S283233F-FE K4S283233F-FHE K4S283233F-G K4S283233F-L K4S283233F-N K4S283233F-FF600
OCR Text	...are stable IO = 0 mA Page burst 4banks Activated tCCD = 2CLKs tRC tRC(min) -E/C -N/L Active Standby Current in non power-down mode (One Bank Active) ICC3NS 22 mA Operating Current (Burst Mode) ICC4 110 85 80 8...
Description	4M X 32 SYNCHRONOUS DRAM, 5.4 ns, PBGA90 1M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA 100万x 32Bit的4银行0FBGA移动SDRAM
File Size	138.69K / 12 Page	View it Online	Download Datasheet

				Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
Part No.	K4S28323LF K4S28323LF-ER1H K4S28323LF-F K4S28323LF-FR60 K4S28323LF-HER75 K4S28323LF-NR1L K4S28323LF-FR750 K4S28323LF-FS750
OCR Text	...are stable IO = 0 mA Page burst 4banks Activated tCCD = 2CLKs tRC tRC(min) -E/C -N/L Active Standby Current in non power-down mode (One Bank Active) ICC3NS 20 mA Operating Current (Burst Mode) ICC4 100 75 70 7...
Description	4M X 32 SYNCHRONOUS DRAM, 6 ns, PBGA90 1M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA 100万x 32Bit的4银行0FBGA移动SDRAM
File Size	139.21K / 12 Page	View it Online	Download Datasheet

				Samsung semiconductor
Part No.	KM44S32030B KM44S32030BT-G_F10 KM44S32030BT-G_F8
OCR Text	...are stable IO = 0 mA Page burst 4banks Activated tCCD = 2CLKs tRC tRC(min) CKE 0.2V G F mA Operating current (Burst mode) Refresh current Self refresh current ICC4 140 135 115 115 115 mA 1 ICC5 ICC6 220 ...
Description	128Mbit SDRAM 8M x 4Bit x 4 Banks Synchronous DRAM LVTTL
File Size	90.36K / 11 Page	View it Online	Download Datasheet

				Samsung semiconductor
Part No.	M464S1724CT1 M464S1724CT1-C1H M464S1724CT1-C1L M464S1724CT1-L1H
OCR Text	4banks,4K Refresh,3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION The Samsung M464S1724CT1 is a 16M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung M464S1724CT1 consists of eight CMOS 8M x 16 bit with 4banks Sy...
Description	16Mx64 SDRAM SODIMM based on 8Mx16,4banks,4K Refresh,3.3V Synchronous DRAMs with SPD
File Size	97.13K / 9 Page	View it Online	Download Datasheet

				Hynix Semiconductor, Inc. Hynix Semiconductor Inc. HYNIX[Hynix Semiconductor]
Part No.	HY57V283220 HY5V22LFP-8 HY5V22LFP-P HY5V22LFP-S HY57V283220T HY57V283220LT-5 HY57V283220LT-55 HY57V283220LT-6 HY57V283220LT-7 HY57V283220LT-8 HY57V283220LT-H HY57V283220LT-P HY57V283220LT-S HY57V283220T-5 HY57V283220T-55 HY57V283220T-6 HY57V283220T-7 HY57V283220T-8 HY57V283220T-H HY57V283220T-P HY57V283220T-S HY57V283220TP-5 HY57V283220TP-55 HY57V283220TP-6 HY57V283220TP-7 HY57V283220TP-8 HY57V283220TP-H HY57V283220TP-P HY57V283220TP-S HY57V283220LTP-5 HY57V283220LTP-55 HY57V283220LTP-6 HY57V283220LTP-7 HY57V283220LTP-8 HY57V283220LTP-P HY57V283220LTP-S HY57V283220LTP-H HY5V22F-5 HY5V22F-55 HY5V22F-6 HY5V22F-7 HY5V22F-8 HY5V22F-H HY5V22F-P HY5V22FP-5 HY5V22FP-55 HY5V22FP-6 HY5V22FP-7 HY5V22FP-8 HY5V22FP-H HY5V22FP-P HY5V22FP-S HY5V22F-S HY5V22LF-5 HY5V22LF-55 HY5V22LF-6 HY5V22LF-7 HY5V22LF-8 HY5V22LF-H HY5V22LF-P HY5V22LFP-5 HY5V22LFP-55 HY5V22LFP-6 HY5V22LFP-7 HY5V22LFP-H HY5V22LF-S
OCR Text	.../ HY5V22(L)F(P) is organized as 4banks of 1,048,576x32. HY57V283220(L)T(P) / HY5V22(L)F(P) is offering fully synchronous operation referenced to a positive edge of the clock. All inputs and outputs are synchronized with the rising edge of t...
Description	4 Banks x 1M x 32Bit Synchronous DRAM 4银行× 1米x 32Bit的同步DRAM RES 1K-OHM 1% 0.063W 200PPM THICK-FILM SMD-0402 10K/REEL-7IN-PA 4银行× 1米x 32Bit的同步DRAM RES 100-OHM 1% 0.063W 200PPM THICK-FILM SMD-0402 5K/REEL-7IN-PA 4银行× 1米x 32Bit的同步DRAM RES 1K-OHM 1% 0.063W 200PPM THICK-FILM SMD-0402 5K/REEL-7IN-PA 4银行× 1米x 32Bit的同步DRAM RES 100-OHM 1% 0.063W 200PPM THICK-FILM SMD-0402 10K/REEL-7IN-PA 4银行× 1米x 32Bit的同步DRAM RES 10K-OHM 1% 0.063W 200PPM THICK-FILM SMD-0402 10K/REEL-7IN-PA 4银行× 1米x 32Bit的同步DRAM RES 1K-OHM 5% 0.063W 200PPM THICK-FILM SMD-0402 10K/REEL-7IN-PA RES 100-OHM 5% 0.063W 200PPM THICK-FILM SMD-0402 10K/REEL-7IN-PA
File Size	901.94K / 15 Page	View it Online	Download Datasheet

				Hynix Semiconductor, Inc. http:// Hynix Semiconductor Inc. HYNIX[Hynix Semiconductor]
Part No.	HY57V64820HG HY57V64820HGLT-5 HY57V64820HGLT-55 HY57V64820HGLT-6 HY57V64820 HY57V64820HGLT-7 HY57V64820HGLT-H HY57V64820HGLT-P HY57V64820HGLT-S HY57V64820HGT-55 HY57V64820HGT-H HY57V64820HGT-K HY57V64820HGT-P HY57V64820HGLT-8 HY57V64820HGT-5 HY57V64820HGT-6 HY57V64820HGT-S HY57V64820HGLT-K HY57V64820HGT-7 HY57V64820HGT-8
OCR Text	...h. HY57V64820HG is organized as 4banks of 2,097,152x8. HY57V64820HG is offering fully synchronous operation referenced to a positive edge of the clock. All inputs and outputs are synchronized with the rising edge of the clock input. The dat...
Description	4 Banks x 2M x 8Bit Synchronous DRAM 8M X 8 SYNCHRONOUS DRAM, 6 ns, PDSO54 CAP 0.01UF 50V 5% X7R SMD-0805 TR-7 PLATED-NI/SN 8M X 8 SYNCHRONOUS DRAM, 5.4 ns, PDSO54 CAP 1500PF 50V 10% X7R SMD-0603 T&R-7IN-PA NI-SN 8M X 8 SYNCHRONOUS DRAM, 5.4 ns, PDSO54 100PF50V_5%_NPO_,SM0603 CSM, CER 100PF 50V 5% 060
File Size	127.85K / 11 Page	View it Online	Download Datasheet

				Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
Part No.	K4S511533F K4S511533F-YC K4S511533F-F1H K4S511533F-F1L K4S511533F-F75 K4S511533F-L
OCR Text	...are stable IO = 0 mA Page burst 4banks Activated tCCD = 2CLKs tRC tRC(min) -C -L Active Standby Current in non power-down mode (One Bank Active) ICC3NS 30 mA Operating Current (Burst Mode) ICC4 110 100 100 mA ...
Description	8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA 8米16 × 4银行4FBGA移动SDRAM
File Size	105.17K / 12 Page	View it Online	Download Datasheet

For 4banks Found Datasheets File :: 1003 Search Time::2.313ms
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | <8> | 9 | 10 | 11 | 12 | 13 | 14 | 15 |

▲Up To Search▲

Price and Availability