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    Samsung Electronics
Part No. KFG1G16Q2C
OCR Text ...e operation revised. 5. chapter 6.15 cold reset timing revised. 1. corrected errata. 2. chapter 2.8.18 command register f220h (r/w) revised....5kb internal bufferram: ? slc nand array: device performance ? host int...
Description 1Gb OneNAND C-die

File Size 1,255.08K  /  142 Page

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    Duracell
Part No. ZAXM-201-1C-ES
OCR Text ...ant rf output power over 2.1C 3.6 v voltage range ? fcc, ic, and ce certifed ? rohs compliant ordering information part number order number supplying form zaxm-200 series apex module zaxm-201-1 100 mw output power, pcb trace antenna zaxm...
Description
File Size 1,166.71K  /  18 Page

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    Samsung Electronic
Part No. KFG1G16Q2M-DED6 KFG2G16Q2M-DEB6 KFG2G16Q2M-DED6 KFG4G16Q2M-DEB6 KFG4G16Q2M-DED6
OCR Text ...orms are in sections 4.0 though 6.0. section 7.0 provides additional appl ication and technical notes pertaining to use of the onenand. p...5kb internal bufferram: ? slc nand array: device performance ? host int...
Description FLASH MEMORY(66MHz)

File Size 1,595.42K  /  125 Page

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    KFG1216D2M KFG1216Q2M KFH1G16Q2M

Samsung semiconductor
Part No. KFG1216D2M KFG1216Q2M KFH1G16Q2M
OCR Text ...d for cs in version id register 6. divided default status of interrupt status register by warm,hot reset and cold reset 7. revised load...5kb internal bufferram. 1kb bootram is used for reserving bootcode, and 4kb dataram is used for bu...
Description FLASH MEMORY

File Size 1,340.62K  /  93 Page

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    ST Microelectronics
Part No. SN250
OCR Text ... . . . . . . . . . . . . . . . 6 3 pin assignment . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ....5kb of integrated ram for data and program storage. the sn250 software stack employs an effective w...
Description Single-chip ZigBee/802.15.4 solution

File Size 2,103.91K  /  130 Page

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    TI store
Part No. MSP430FR2433IRGE MSP430FR2433IRGER MSP430FR2433IRGET
OCR Text ...y voltage range from 1.8 v to 3.6 v (1) ? optimized ultra-low-power modes ? active mode: 126 a/mhz (typical) ? standby : < 1 a with vlo ? ...5kb of nonvolatile memory ? built-in error correction code (ecc) ? configurable write protection ? u...
Description <font color=red>[Old version datasheet]</font> Mixed-Signal Microcontroller

File Size 1,647.04K  /  91 Page

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    SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
Part No. KFG1216D2M-DED KFG1216Q2M-DEB KFG1216Q2M-DED KFG1216D2M-DEB KFG1216D2M-DIB KFG1216D2M-DID KFG1216U2M-DEB KFG1216U2M-DED KFG1G16D2M-DEB KFG1G16D2M-DED KFG1G16Q2M-DED KFG1G16U2M-DED KFH1216D2M-DEB KFH1216D2M-DED KFH1216Q2M-DEB KFH1216Q2M-DED KFH1216U2M-DEB KFH1G16D2M-DEB KFH1G16D2M-DED KFG1G16U2M-DEB KFH1216U2M-DED KFG1216Q2M-DIB KFG1216Q2M-DID KFG1216U2M-DID KFG1216U2M-DIB KFG1G16D2M-DID KFG1G16Q2M-DIB KFG1G16Q2M-DID KFG1G16U2M-DID KFH1216U2M-DID KFH1216D2M-DID KFH1G16Q2M-DED KFH1G16Q2M-DEB50
OCR Text ...D for CS in version ID register 6. Divided default status of interrupt status register by Warm,Hot reset and Cold reset 7. Revised Load oper...5KB internal BufferRAM. 1KB BootRAM is used for reserving bootcode, and 4KB DataRAM is used for buff...
Description RSM, TKF 15K 1/16W 5% 040
FLASH MEMORY 闪存
.025 SOCKET STRIPS
64M X 16 FLASH 1.8V PROM, 76 ns, PBGA63

File Size 1,223.53K  /  93 Page

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    SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
Part No. KFM1G16Q2M-DEB6 KFN2G16Q2M-DED5
OCR Text ...orms are in sections 4.0 though 6.0. section 7. 0 provides additional application and technical notes pertaining to use of the muxonenand....5kb internal bufferram: ? slc nand array: ...
Description MuxOneNAND FLASH MEMORY MuxOneNAND闪存

File Size 1,538.27K  /  124 Page

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    OKI SEMICONDUCTOR CO., LTD.
Part No. MSM62705
OCR Text ...1.5 m w resistor). clk input 6 msm62705/62720 ? semiconductor ram configuration msm62705 msm62720 r7 r6 r5 r4 r3 r2 r1 r0 rn d 0 7 0h 7h ram (stack) 64 3fh r7 - 4: r7 - 0: registers operated by the djnz instruction. local registers r...
Description CMOS Single-Chip Microcomputer for IC Card(用于IC卡的8位微计算

File Size 267.61K  /  6 Page

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