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FREESCALE[Freescale Semiconductor, Inc]
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Part No. |
MRF5S9101NR1 MRF5S9101MBR1 MRF5S9101MR1 MRF5S9101NBR1
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OCR Text |
...equency Band (869 - 894 MHz and 921 - 960 MHz) Power Gain - 17.5 dB Drain Efficiency - 60% GSM EDGE Application * Typical GSM EDGE Performance: VDD = 28 Volts, IDQ = 650 mA, Pout = 50 Watts Avg., Full Frequency Band (869 - 894 MHz and 921 -... |
Description |
RF Power Field Effect Transistors
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File Size |
533.41K /
20 Page |
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it Online |
Download Datasheet
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Motorola
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Part No. |
MHVIC915R2
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OCR Text |
...z BW * Typical GSM Performance: 921-960 MHz, 26 Volts Output Power -- 15 W P1dB Power Gain -- 30 dB @ P1dB Drain Efficiency = 56% @ P1dB * On-Chip Matching (50 Ohm Input, >9 Ohm Output) * On-Chip Current Mirror gm Sensing FET for Self Bias ... |
Description |
CDMA, GSM/GSM EDGE, 946-960 MHz, 15 W, 27 V RF LDMOS Wideband Integrated Amplifier
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File Size |
463.26K /
12 Page |
View
it Online |
Download Datasheet
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Price and Availability
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