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  921-960 Datasheet PDF File

For 921-960 Found Datasheets File :: 168    Search Time::1ms    
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    MW4IC915NBR1 MW4IC915MBR1 MW4IC915GNBR1 MW4IC915GMBR1

MOTOROLA INC
Motorola, Inc.
MOTOROLA[Motorola, Inc]
Part No. MW4IC915NBR1 MW4IC915MBR1 MW4IC915GNBR1 MW4IC915GMBR1
OCR Text ...Frequency Band (869-894 MHz and 921-960 MHz) Power Gain -- 31 dB Power Added Efficiency -- 19% Spectral Regrowth @ 400 kHz Offset = -65 dBc Spectral Regrowth @ 600 kHz Offset = -83 dBc EVM -- 1.5% * Capable of Handling 5:1 VSWR, @ 26 Vdc, 9...
Description RF LDMOS Wideband Integrated Power Amplifiers

File Size 330.77K  /  16 Page

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    FREESCALE[Freescale Semiconductor, Inc]
Part No. MRF5S9101NR1 MRF5S9101MBR1 MRF5S9101MR1 MRF5S9101NBR1
OCR Text ...equency Band (869 - 894 MHz and 921 - 960 MHz) Power Gain - 17.5 dB Drain Efficiency - 60% GSM EDGE Application * Typical GSM EDGE Performance: VDD = 28 Volts, IDQ = 650 mA, Pout = 50 Watts Avg., Full Frequency Band (869 - 894 MHz and 921 -...
Description RF Power Field Effect Transistors

File Size 533.41K  /  20 Page

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    Motorola
Part No. MHVIC915R2
OCR Text ...z BW * Typical GSM Performance: 921-960 MHz, 26 Volts Output Power -- 15 W P1dB Power Gain -- 30 dB @ P1dB Drain Efficiency = 56% @ P1dB * On-Chip Matching (50 Ohm Input, >9 Ohm Output) * On-Chip Current Mirror gm Sensing FET for Self Bias ...
Description CDMA, GSM/GSM EDGE, 946-960 MHz, 15 W, 27 V RF LDMOS Wideband Integrated Amplifier

File Size 463.26K  /  12 Page

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    MRF6S9160H MRF6S9160HR308

Freescale Semiconductor, Inc
Part No. MRF6S9160H MRF6S9160HR308
OCR Text ...160 watts, full frequency band (921 - 960 mhz) power gain ? 20 db drain efficiency ? 58% ? capable of handling 10:1 vswr, @ 28 vdc, 880 mhz, 160 watts cw output power features ? characterized with series equivalent large - signal impedance...
Description RF Power Field Effect Transistors

File Size 477.84K  /  12 Page

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    RD09MUP211

Mitsubishi Electric Semiconductor
Mitsubishi Electric Sem...
Part No. RD09MUP211
OCR Text ...0 178.3 0.513 28.0 0.011 59.9 0.921 179.6 540 0.952 178.1 0.480 26.8 0.012 64.2 0.924 179.0 560 0.953 177.6 0.455 25.7 0.012 67.0 0.925 178....960 176.0 0.298 19.0 0.018 74.2 0.937 176.1 740 0.962 175.5 0.283 18.6 0.019 74.5 0.938 175.8 760 0....
Description RoHS Compliance, Silicon MOSFET Power Transistor, 520MHz, 8W

File Size 338.48K  /  9 Page

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    PTF10160

ERICSSON[Ericsson]
Part No. PTF10160
OCR Text ... Test Circuit Schematic for f = 921 to 960 MHz DUT l1, l9 l2 l3 l4 l5 l6 l7 l8 l1, l9 PTF 10160 0.037 l 0.120 l 0.080 l 0.187 l 0.204 l 0.250 l 0.031 l 0.157 l 0.037 l LDMOS Transistor Microstrip 50 W Microstrip 50 W Microstrip 50 W Microst...
Description 85 Watts, 860-960 MHz GOLDMOS Field Effect Transistor

File Size 251.71K  /  7 Page

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    HPQ-10

Mini-Circuits
Part No. HPQ-10
OCR Text ...00 89.90 1.26 1.19 1.25 921.00 3.25 3.44 0.20 19.96 90.03 1.26 1.19 1.26 927.00 3.28 3.41 0.13 19.94 89.97 1.26 1.19 1.26 933.00 3.30 3.36 0.06 19.92 89.82 1.26 1.19 1.26 939.00 3.32 3.33 0.01 19.90...
Description 900 MHz - 970 MHz RF/MICROWAVE COMBINER, 0.45 dB INSERTION LOSS ROHS COMPLIANT,CASE AT577, 6 PIN

File Size 227.44K  /  1 Page

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    MRF9080LR3 MRF9080LR308

Freescale Semiconductor, Inc
Part No. MRF9080LR3 MRF9080LR308
OCR Text ...of handling 5:1 vswr, @ 26 vdc, 921 mhz, 90 watts cw output power features ? internally matched for ease of use ? high gain, high efficienc...960 mhz, 75 w, 26 v lateral n - channel rf power mosfet case 465 - 06, style 1 ni - 780 lifetime bu...
Description RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET

File Size 209.65K  /  11 Page

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    PD57070S PD57070

意法半导
STMICROELECTRONICS[STMicroelectronics]
Part No. PD57070S PD57070
OCR Text ...IS11I 0.859 0.890 0.906 0.913 0.921 0.928 0.933 0.941 0.946 0.951 0.956 0.959 0.961 0.963 0.966 0.970 0.968 0.975 0.972 0.972 0.974 0.975 0....960 0.962 0.965 0.967 0.968 0.968 0.969 0.969 0.968 0.969 0.970 0.972 S22 -169 -172 -173 -173 -17...
Description RF POWER TRANSISTORS THE LDMOST PLASTIC FAMILY

File Size 295.43K  /  13 Page

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