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Jiangsu Changjiang Elec...
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| Part No. |
2SD2391
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| OCR Text |
...base breakdown voltage v (br)cbo i c =50 a,i e =0 60 v collector-emitter breakdown voltage v (br)ceo i c =1ma,i b =0 60 v emitter-base breakdown voltage v (br)ebo i e =50 a,i c =0 6 v collector cut-off current i cbo v... |
| Description |
SOT-89-3L Plastic-Encapsulate Transistors
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| File Size |
1,143.20K /
3 Page |
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it Online |
Download Datasheet
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Nanjing International G...
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| Part No. |
2SD2391
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| OCR Text |
...base breakdown voltage v (br)cbo i c =50 a,i e =0 60 v collector-emitter breakdown voltage v (br)ceo i c =1ma,i b =0 60 v emitter-base breakdown voltage v (br)ebo i e =50 a,i c =0 6 v collector cut-off current i cbo v... |
| Description |
SOT-89-3L Plastic-Encapsulate Transistors
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| File Size |
306.91K /
1 Page |
View
it Online |
Download Datasheet |
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Inchange Semiconductor ...
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| Part No. |
2SC3994
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| OCR Text |
...igh breakdown voltage- : v (br)cbo = 1100v(min) applications designed for horizontal deflection output applications. absolute maximum ratings(t a =25 ) symbol parameter value unit v cbo collector-base v olt... |
| Description |
High Switching Speed
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| File Size |
191.56K /
2 Page |
View
it Online |
Download Datasheet |
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Price and Availability
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