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Maxwell Technologies, Inc
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| Part No. |
7025E 7025ERPQB-45 7025ERPQS-45 7025ERPQB-35 7025ERPQI-35 7025ERPQE-35
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| OCR Text |
... 4 4. to ensure that the write cycl e is inhibited during contention. t wb 0--ns write hold after busy 5 5. to ensure that a write cycle is completed after contention. t wh 25 -- ns write pulse to data delay 1 -35 -45 t wdd -- -- 60 70 n... |
| Description |
(8K x 16-Bit) Dual Port RAM High-Speed CMOS 8K X 16 DUAL-PORT SRAM, 35 ns, QFP84
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| File Size |
522.64K /
19 Page |
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Cypress Semiconductor Corp.
Cypress Semiconductor, Corp.
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| Part No. |
CY7C1062AV25-10BGC CY7C1062AV25-10BGI
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| OCR Text |
...s. test conditions for the read cycl e use output loading as shown in (a) of ac test loads, unless sp ecified otherwise. 5. this part has a voltage regulator that steps down the voltage from 2.3v to 2v internally. t power time has to be pr... |
| Description |
512K x 32 Static RAM 512K X 32 STANDARD SRAM, 10 ns, PBGA119
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| File Size |
267.08K /
9 Page |
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it Online |
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Electronic Theatre Controls, Inc.
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| Part No. |
CZ80CPU
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| OCR Text |
.... m 1 o h i g h machine cycl es one this p i n together with mreq_n indic a tes that the c u rrent machine cycle is the opcode fetch cycle of an instruction execution. it togeth er with iorq_n i n dicates an int e rrupt acknow... |
| Description |
8-Bit Microprocessor Megafunction 8位微处理器宏功能
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| File Size |
61.69K /
5 Page |
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it Online |
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飞思卡尔半导体(中国)有限公司
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| Part No. |
33790
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| OCR Text |
...controller signal low time t cycl 2.0 ? 667 s microcontroller signal high time t cych 2.0 ? 667 s microcontroller signal duty cycle for logic zero dc lo 30 33 36 % microcontroller signal duty cycle for logic one dc hi 60.0 66.7 72... |
| Description |
Two-Channel Distributed System Interface (DSI) Physical Interface Device
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| File Size |
170.72K /
12 Page |
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it Online |
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Leadis Technology Inc.
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| Part No. |
LDS8866002-T2-300/300/300
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| OCR Text |
...then determined by the pwm duty cycl e that m ay be adjusted as described above. figure 3. lds8866 timing diagram note: timing diagram represents condition when led forward voltage vf is higher than charge pump mode times (1.5) input voltag... |
| Description |
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| File Size |
365.14K /
12 Page |
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it Online |
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Samsung Electronic
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| Part No. |
K9F1208D0B K9F1208B0B K9F1208U0
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| OCR Text |
... out at 50ns(k9f1208r0b : 60ns) cycl e time per byte. the i/o pins serve as the ports for address and data input/out put as well as command input. the on-chip write control automat es all program and erase functions including pulse rep... |
| Description |
64M x 8 Bit NAND Flash Memory
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| File Size |
1,022.85K /
45 Page |
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it Online |
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Cypress Semiconductor Corp.
Cypress Semiconductor, Corp.
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| Part No. |
CY14E064L-SZ45XCT CY14E064L-SZ25XCT
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| OCR Text |
... that read cycles and not write cycl es be used in the sequence, although it is not necessary that oe be low for the sequence to be valid. after the t store cycle time has been fulfilled, the sram will again be activated for read and writ... |
| Description |
64-Kbit (8K x 8) nvSRAM 8K X 8 NON-VOLATILE SRAM, 45 ns, PDSO28
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| File Size |
817.39K /
16 Page |
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it Online |
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