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Continental Device India Limited
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Part No. |
CD9011 CD9011D CD9011E CD9011F CD9011G CD9011H CD9011I CD9011J
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Description |
0.400W General Purpose NPN Plastic Leaded Transistor. 30V Vceo, 0.100A Ic, 29 - 273 hFE 0.400W General Purpose NPN Plastic Leaded Transistor. 30V Vceo, 0.100A Ic, 29 - 44 hFE 0.400W General Purpose NPN Plastic Leaded Transistor. 30V Vceo, 0.100A Ic, 40 - 59 hFE 0.400W General Purpose NPN Plastic Leaded Transistor. 30V Vceo, 0.100A Ic, 54 - 80 hFE 0.400W General Purpose NPN Plastic Leaded Transistor. 30V Vceo, 0.100A Ic, 72 - 108 hFE 0.400W General Purpose NPN Plastic Leaded Transistor. 30V Vceo, 0.100A Ic, 97 - 146 hFE 0.400W General Purpose NPN Plastic Leaded Transistor. 30V Vceo, 0.100A Ic, 132 - 198 hFE 0.400W General Purpose NPN Plastic Leaded Transistor. 30V Vceo, 0.100A Ic, 182 - 273 hFE
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File Size |
85.83K /
3 Page |
View
it Online |
Download Datasheet
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MICROSEMI[Microsemi Corporation]
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Part No. |
APT8011JFLL
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Description |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
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File Size |
263.49K /
5 Page |
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it Online |
Download Datasheet
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Microsemi, Corp. ADPOW[Advanced Power Technology]
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Part No. |
APT20M11JVR
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Description |
Power MOSFET; Package: ISOTOP®; ID (A): 175; RDS(on) (Ohms): 0.011; BVDSS (V): 200; 175 A, 200 V, 0.011 ohm, N-CHANNEL, Si, POWER, MOSFET Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. POWER MOS V 200V 175A 0.011 Ohm
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File Size |
74.41K /
4 Page |
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it Online |
Download Datasheet
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ADPOW[Advanced Power Technology]
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Part No. |
APT10M11JVR
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Description |
POWER MOS V 100V 144A 0.011 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
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File Size |
70.67K /
4 Page |
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it Online |
Download Datasheet
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