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Motorola Mobility Holdings, Inc.
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| Part No. |
MTP29N15E
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| OCR Text |
enhancementmode silicon gate this advanced tmos efet is designed to withstand high energy in the avalanche and commutation modes. the new energy efficient design also offers a draintosource diode with a fast recovery time. designed for low ... |
| Description |
TMOS POWER FET 29 AMPERES 150 VOLTS RDS(on) = 0.07 OHM 29 A, 150 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
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| File Size |
75.95K /
4 Page |
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it Online |
Download Datasheet
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XP Power, Ltd.
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| Part No. |
NTMS4N01R2
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| OCR Text |
...fet 4.2 amps, 20 volts nchannel enhancementmode single so8 package features ? high density power mosfet with ultra low r ds(on) providing higher efficiency ? miniature so8 surface mount package saving board space; mounting information for ... |
| Description |
TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 5.9A I(D) | SO 晶体管| MOSFET的| N沟道| 20V的五（巴西）直| 5.9AI（四）|
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| File Size |
87.05K /
8 Page |
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it Online |
Download Datasheet |
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Motorola Mobility Holdings, Inc.
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| Part No. |
MRF148A
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| OCR Text |
enhancementmode designed for power amplifier applications in industrial, commercial and amateur radio equipment to 175 mhz. ? superior high order imd ? specified 50 volts, 30 mhz characteristics output power = 30 watts power gain = 18 db (t... |
| Description |
RF Power FETs(RF功率场效应管) VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
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| File Size |
155.12K /
6 Page |
View
it Online |
Download Datasheet |
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Price and Availability
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