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  field effect transistor silico Datasheet PDF File

For field effect transistor silico Found Datasheets File :: 150+       Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | <8> | 9 | 10 | 11 | 12 | 13 | 14 | 15 |   

    ERICSSON[Ericsson]
Ericsson Microelectronics
Part No. PTF10015
Description 50 Watts/ 300-960 MHz GOLDMOS field effect transistor
50 Watts, 300-960 MHz GOLDMOS field effect transistor
50 Watts, 30060 MHz GOLDMOS field effect transistor

File Size 220.13K  /  6 Page

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    PTF10036

Ericsson Microelectronics
Part No. PTF10036
Description 85 Watts, 86060 MHz GOLDMOS field effect transistor
85 Watts, 860-960 MHz GOLDMOS field effect transistor
85 Watts/ 860-960 MHz GOLDMOS field effect transistor

File Size 220.13K  /  6 Page

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    MMBF2202PT1_D ON2097 MMBF2201PT1 MMBF2202PT3 MMBF2202PT1 MMBF2201PT3

ON Semiconductor
MOTOROLA[Motorola, Inc]
Part No. MMBF2202PT1_D ON2097 MMBF2201PT1 MMBF2202PT3 MMBF2202PT1 MMBF2201PT3
Description Small-signal MOSFET TMOS single P-channel field effect transistor
Motorola Preferred Device
From old datasheet system
LOW RDS SMALL SIGNAL MOSFETS TMOS SINGLE P CHANNEL field effect transistorS

File Size 129.42K  /  6 Page

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    NDH8321C

FAIRCHILD SEMICONDUCTOR CORP
Part No. NDH8321C
Description Dual N & P-Channel Enhancement Mode field effect transistor(??娌????娌??澧?己??????绠?N娌??锛???垫?3.8A, 婕???靛?20V锛???????.035惟锛?娌??锛???垫?-2.7A, 婕???靛?-20V锛???????.07惟锛?
Dual N & P-Channel Enhancement Mode field effect transistor

File Size 251.76K  /  12 Page

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    IRFF110 IRFF111 IRFF112 IRFF113

General Electric Solid State
GE Solid State
Part No. IRFF110 IRFF111 IRFF112 IRFF113
Description N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 3.0A.
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 3.0A.
Power MOS field-effect transistors
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 3.5A.

File Size 173.01K  /  5 Page

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    TK12A60U

Toshiba Semiconductor
Part No. TK12A60U
Description field effect transistor silicon N Channel MOS Type (DTMOS?
field effect transistor silicon N Channel MOS Type (DTMOS楼卤)

File Size 175.74K  /  6 Page

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    TK20A60U

Toshiba Semiconductor
Part No. TK20A60U
Description field effect transistor silicon N Channel MOS Type (DTMOS?
field effect transistor silicon N Channel MOS Type (DTMOS楼卤)

File Size 173.21K  /  6 Page

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    TK15A60U

Toshiba Semiconductor
Part No. TK15A60U
Description field effect transistor silicon N Channel MOS Type (DTMOS?
field effect transistor silicon N Channel MOS Type (DTMOS楼卤)

File Size 150.71K  /  6 Page

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    PTF10120

ERICSSON[Ericsson]
Ericsson Microelectronics
Part No. PTF10120
Description 120 Watts, 1.8-2.0 GHz GOLDMOS field effect transistor 120瓦,1.8-2.0 GHz的GOLDMOS场效应晶体管
120 Watts, 1.8.0 GHz GOLDMOS field effect transistor

File Size 419.28K  /  6 Page

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    PTF10193

ERICSSON[Ericsson]
Part No. PTF10193
Description 12 Watts, 860-960 MHz GOLDMOS⑩ field effect transistor
12 Watts, 860-960 MHz GOLDMOS field effect transistor

File Size 330.49K  /  6 Page

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