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Philips
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| Part No. |
EC103D1
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| OCR Text |
gate thyristor
Rev. 01 -- 1 November 2001
M3D186
Product data
1. Description
Very sensitive gate thyristor intended to be interface...commutated turn-off time VD = VDRM (max); VR = VRRM (max); Tj = 125 C; RGK = 1 k VD = 0.67 VDRM(max)... |
| Description |
Sensitive gate thyristor
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| File Size |
59.90K /
11 Page |
 View
it Online |
Download Datasheet
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Motorola Mobility Holdings, Inc.
ON Semi
MOTOROLA[Motorola, Inc]
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| Part No. |
MMFT1N10E_D ON2216 MMFT1N10E MMFT1N10
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| OCR Text |
...hannel Enhancement Mode Silicon Gate TMOS E-FETt SOT-223 for Surface Mount
This advanced E-FET is a TMOS Medium Power MOSFET designed to wi...commutated source-drain current versus re-applied drain voltage when the source-drain diode has unde... |
| Description |
MEDIUM POWER TMOS FET 1 AMP 100 VOLTS 1000 mA, 100 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-261AA
N-hannel Enhancement-ode Logic Level SOT23
From old datasheet system
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| File Size |
236.13K /
10 Page |
View
it Online |
Download Datasheet |
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ON Semi
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| Part No. |
MMFT3055EL_D ON2224
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| OCR Text |
...hannel Enhancement Mode Silicon Gate TMOS E-FETt SOT-223 for Surface Mount
This advanced E-FET is a TMOS power MOSFET designed to withstand...commutated source-drain current versus re-applied drain voltage when the source-drain diode has unde... |
| Description |
N-hannel Enhancement-ode Logic Level SOT24
From old datasheet system
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| File Size |
201.65K /
10 Page |
View
it Online |
Download Datasheet |
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Price and Availability
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