hi-rel pnp bipolar transistor pdf Datasheet P8 Description --- IC-ON-LINE


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hi-rel pnp bipolar transistor Datasheet PDF File

For hi-rel pnp bipolar transistor Found Datasheets File :: 150+ Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | <8> | 9 | 10 | 11 | 12 | 13 | 14 | 15 |

				UTC ROHM[Rohm]
Part No.	2SB1713 2SB1714 2SB852K1 2SC2412K1 2SC41021 2SC47261 2SC58241 2SC58661 2SC58761 2SD1383K1 2SD16641 2SD18981 2SD20981 2SD2114K1 2SD26721 2SK20941 2SK25031 2SK25041 2SK27151 2SK30181 2SK30191 2SK30501 2SK35411 4N60-TA3-T 4N60-TF3-T 4N60L-TA3-T
Description	-3A / -12V bipolar transistor -2A / -30V bipolar transistor High-gain Amplifier transistor (?32V, ?0.3A) General purpose transistor (50V, 0.15A) High-voltage Amplifier transistor (120V, 50mA) High-Frequency Amplifier transistor (11V, 50mA, 3.2GHz) Power transistor (60V, 3A) Medium power transistor (60V, 2A) Medium power transistor (60V, 0.5A) High-gain Amplifier transistor (32V , 0.3A) Medium Power transistor (32V, 1A) Power transistor (80V, 1A) Low VCE(sat) transistor (strobe flash) High-current Gain Medium Power transistor (20V, 0.5A) Low frequency amplifier 4V Drive Nch MOS FET 10V Drive Nch MOS FET 2.5V Drive Nch MOS FET 4 Amps, 600 Volts N-CHANNEL POWER MOSFET
File Size	93.04K / 3 Page	View it Online	Download Datasheet

				Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No.	CT30SM-12 CT30SM-1
Description	MITSUBISHI INSULATED GATE bipolar transistor GENERAL INVERTER UPS USE Integrated Gate bipolar transistor (IGBT) Modules: 250V GENERAL INVERTER . UPS USE
File Size	35.85K / 3 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRG4RC10UPBF IRG4RC10UTRPBF IRG4RC10UPBF-15
Description	INSULATED GATE bipolar transistor Generation 4 IGBT design provides tighter parameter distribution and higher effciency than previous generation INSULATED GATE bipolar transistor
File Size	647.10K / 10 Page	View it Online	Download Datasheet

				List of Unclassifed Manufacturers International Rectifier ETC[ETC]
Part No.	OM6059SB OM6056 OM6061SB OM6056SB OM6057SB OM6058SB OM6060SB OM6059SB2
Description	High Current, High Voltage 500V , 58 Amp N-Channel, MOSFET(大电流，高电压，500V , 58A，N沟道，MOS场效应管) POWER MOSFETS IN A HERMETIC ISOLATED POWER BLOCK PACKAGE 100V Single N-Channel hi-rel MOSFET in a PB-3A package 500V Single N-Channel hi-rel MOSFET in a PB-3A package 600V Single N-Channel hi-rel MOSFET in a PB-3A package 200V Single N-Channel hi-rel MOSFET in a PB-3A package
File Size	28.66K / 2 Page	View it Online	Download Datasheet

				Electronic Theatre Controls, Inc. List of Unclassifed Manufacturers ETC[ETC] International Rectifier
Part No.	OM5219XX OM5218RC OM5218XX OM5235DC OM5235RC OM5235SC OM5235XX OM5206DC OM5206SC OM5206XX OM5220DC OM5220XX OM5204SC OM5204XX OM5205RC OM5205SC OM5206RC OM5218DC OM5218SC OM5219DC OM5219RC OM5219SC OM5220SC OM5204DC OM5204RC OM5205DC OM5205XX OM5220RC
Description	SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits 100V0A条高可靠性超快速共阴极二极管采用TO - 258AA封装 HERMETIC JEDEC TO-258AA HIGH EFFICIENCY, CENTER-TAP RECTIFIER 100V 30A hi-rel Ultra-Fast Common Cathode Diode in a TO-258AA package 300V 30A hi-rel Ultra-Fast Common Cathode Diode in a TO-258AA package 400V 30A hi-rel Ultra-Fast Common Cathode Diode in a TO-258AA package 600V 30A hi-rel Ultra-Fast Common Cathode Diode in a TO-258AA package 150V 30A hi-rel Ultra-Fast Common Cathode Diode in a TO-258AA package 200V 30A hi-rel Ultra-Fast Common Cathode Diode in a TO-258AA package
File Size	19.14K / 2 Page	View it Online	Download Datasheet

				CENTRAL[Central Semiconductor Corp]
Part No.	CZT3055 CZT3055NPN CZT2955pnp CZT2955 CZT305
Description	SMD bipolar Power transistor NPN General Purpose Amplifier/Switch SMD bipolar Power transistor pnp General Purpose Amplifier/Switch 2.0W SURFACE MOUNT COMPLEMENTARY SILICON POWER transistor
File Size	72.36K / 2 Page	View it Online	Download Datasheet

				TOSHIBA[Toshiba Semiconductor]
Part No.	GT40G121
Description	Insulated Gate bipolar transistor Silicon N Channel IGBT The 4th Generation Current Resonance Inverter Switching Applications TOSHIBA Insulated Gate bipolar transistor Silicon N Channel IGBT
File Size	139.45K / 5 Page	View it Online	Download Datasheet

				International Rectifier List of Unclassifed Manufacturers ETC[ETC]
Part No.	OM5236ST OM5241ST OM5240ST OM5238ST OM5237ST OM5239ST OM5239SR OM5237SR OM5238SR OM5240SR
Description	400V 10A hi-rel Ultra-Fast Discrete Diode in a TO-257AA package 400V 10A hi-rel Ultra-Fast Discrete Diode in a D2 package 150V 10A hi-rel Ultra-Fast Discrete Diode in a TO-257AA package 150V 10A hi-rel Ultra-Fast Discrete Diode in a D2 package 100V 10A hi-rel Ultra-Fast Discrete Diode in a D2 package SINGLE ISOLATED RECTIFIER IN HERMETIC 200V 10A hi-rel Ultra-Fast Discrete Diode in a D2 package SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits
File Size	17.88K / 2 Page	View it Online	Download Datasheet

				ONSEMI[ON Semiconductor]
Part No.	MGW12N120
Description	Insulated Gate bipolar transistor N-Channel Insulated Gate bipolar transistor 20 A, 1200 V, N-CHANNEL IGBT, TO-247AE
File Size	133.06K / 5 Page	View it Online	Download Datasheet

				ST Microelectronics STMicroelectronics
Part No.	STC03DE170HV07 STC03DE170HV
Description	Hybrid emitter switched bipolar transistor ESBT 1700V - 3A - 0.33 } Hybrid emitter switched bipolar transistor ESBT㈢ 1700V - 3A - 0.33 W Hybrid emitter switched bipolar transistor ESBT庐 1700V - 3A - 0.33 W Hybrid emitter switched bipolar transistor ESBT? 1700V - 3A - 0.33 W
File Size	229.70K / 9 Page	View it Online	Download Datasheet

For hi-rel pnp bipolar transistor Found Datasheets File :: 150+ Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | <8> | 9 | 10 | 11 | 12 | 13 | 14 | 15 |