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MURATA[Murata Manufacturing Co., Ltd.]
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| Part No. |
FR12AM32AC FR05CM12AL FR05CM21AR FR05CM65AF
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| OCR Text |
...ntroller for injection speed of moulding machine.
Sensing direction A
MR3 MR4
MR2 MR1
3
(in mm)
3-0.5 MR elements pitch
Part Number FR12AM32AC
Supply Voltage (V) 12 +/-2V
Output Voltage (V) Low Level=0.5 max.(at 25C... |
| Description |
Rotary Sensors
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| File Size |
188.33K /
8 Page |
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it Online |
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IRF[International Rectifier]
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| Part No. |
IRFI1310G
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| OCR Text |
...al-industrial applications. The moulding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. This isolation is equivalent to using a 100 micron mica barrier with standard TO... |
| Description |
Power MOSFET(Vdss=100V/ Rds(on)=0.04ohm/ Id=22A)
Power MOSFET(Vdss=100V, Rds(on)=0.04ohm, Id=22A)
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| File Size |
319.89K /
8 Page |
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it Online |
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IRF[International Rectifier]
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| Part No. |
IRFIZ34VPBF
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| OCR Text |
...al-industrial applications. The moulding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. This isolation is equivalent to using a 100 micron mica barrier with standard TO... |
| Description |
Advanced Process Technology
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| File Size |
211.15K /
8 Page |
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it Online |
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IRF[International Rectifier]
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| Part No. |
IRFIZ48N IRFIZ48 IRFIZ48NPBF
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| OCR Text |
...al-industrial applications. The moulding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. This isolation is equivalent to using a 100 micron mica barrier with standard TO... |
| Description |
55V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package
Power MOSFET(Vdss=55V, Rds(on)=0.016ohm, Id=36A)
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| File Size |
107.92K /
8 Page |
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it Online |
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IRF[International Rectifier]
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| Part No. |
IRFIZ48V IRFIZ48 IRFIZ48VPBF
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| OCR Text |
...al-industrial applications. The moulding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. This isolation is equivalent to using a 100 micron mica barrier with standard TO... |
| Description |
60V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package
Power MOSFET(Vdss=60V, Rds(on)=12mohm, Id=39A)
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| File Size |
92.06K /
8 Page |
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it Online |
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IRF[International Rectifier]
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| Part No. |
IRLI2203 IRLI2203G
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| OCR Text |
...al-industrial applications. The moulding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. This isolation is equivalent to using a 100 micron mica barrier with standard TO... |
| Description |
Power MOSFET(Vdss=30V, Rds(on)=0.010ohm, Id=52A)
Power MOSFET(Vdss=30V, Rds(on)=0.010ohm, Id=52A?
Power MOSFET(Vdss=30V, Rds(on)=0.010ohm, Id=52A??
Power MOSFET(Vdss=30V, Rds(on)=0.010ohm, Id=52A?)
TERMINAL
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| File Size |
286.77K /
8 Page |
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it Online |
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IRF[International Rectifier]
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| Part No. |
IRLI3615
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| OCR Text |
...al-industrial applications. The moulding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. This isolation is equivalent to using a 100 micron mica barrier with standard TO... |
| Description |
150V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package
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| File Size |
98.54K /
8 Page |
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it Online |
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International Rectifier, Corp.
IRF[International Rectifier]
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| Part No. |
IRLI620G IRLI620
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| OCR Text |
...al-industrial applications. The moulding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. This isolation is equivalent to using a 100 micron mica barrier with standard TO... |
| Description |
Power MOSFET(Vdss=200V, Rds(on)=0.80ohm, Id=4.0A) 功率MOSFET（减振钢板基本\u003d 200V的电压，的Rds（on）\u003d 0.80ohm，身份证\u003d 4.0a上）
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| File Size |
295.54K /
8 Page |
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it Online |
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IRF[International Rectifier]
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| Part No. |
IRLI640G IRLI640
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| OCR Text |
...al-industrial applications. The moulding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. This isolation is equivalent to using a 100 micron mica barrier with standard TO... |
| Description |
Power MOSFET(Vdss=200V, Rds(on)=0.18ohm, Id=9.9A)
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| File Size |
288.15K /
8 Page |
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it Online |
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