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    HD74ALVC1G07-15

Renesas Electronics Corporation
Part No. HD74ALVC1G07-15
OCR Text ... supply voltage range, movement power voltage range, heat radiation characteristics, installation and other product characteristics. renesa...limited to redundancy, fire control and malfunction prevention, appropriate treatment for aging deg...
Description Single Buffer / Driver with Open Drain

File Size 82.73K  /  9 Page

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    HD74ALVC1G08-15

Renesas Electronics Corporation
Part No. HD74ALVC1G08-15
OCR Text ... supply voltage range, movement power voltage range, heat radiation characteristics, installation and other product characteristics. renesa...limited to redundancy, fire control and malfunction prevention, appropriate treatment for aging deg...
Description 2-input AND Gate

File Size 88.77K  /  10 Page

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    MSK[M.S. Kennedy Corporation]
Part No. MSK4250H MSK4250
OCR Text ... Otherwise Specified Parameter POWER SUPPLY REQUIREMENTS +Vcc -Vcc PWM Free Running Frequency CONTROL Transconductance Current Monitor 7 Ou...limited current supply, even if the controller locks up, the dissipation will be limited. By observi...
Description 10 AMP, 75V, H-BRIDGE MOSFET BRUSHED MOTOR CONTROLLER

File Size 224.95K  /  6 Page

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    HD74ALVC1G125-15

Renesas Electronics Corporation
Part No. HD74ALVC1G125-15
OCR Text ... supply voltage range, movement power voltage range, heat radiation characteristics, installation and other product characteristics. renesa...limited to redundancy, fire control and malfunction prevention, appropriate treatment for aging deg...
Description Bus Buffer Gate with 3-state Output

File Size 115.03K  /  15 Page

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    MB508

Fujitsu Component Limited.
FUJITSU[Fujitsu Media Devices Limited]
Fujitsu Limited
Part No. MB508
OCR Text ...litude: Pulse Swallow Function: Power Dissipation: Wide Operation Temperature: Stable Output Amplitude: f = 2.3GHz max. (PIN = -4dBm min....LIMITED and FUJITSU MICROELECTRONICS MB508 DQ DQ IN IN DQ C DQ CM C CQ SW2 ...
Description 2.3GHz TWO MODULUS PRESCALER

File Size 93.12K  /  8 Page

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    SPB04N60S5 SPB04N60S507

Infineon Technologies AG
Part No. SPB04N60S5 SPB04N60S507
OCR Text power transistor v ds 600 v r ds(on) 0.95 ? i d 4.5 a feature ? new revolutionary high voltage technology ? ultra low gate charge ? perio...limited by t j ma x i d p uls 9 avalanche energy, single pulse i d = 3.4 a, v dd = 50 v e as 13...
Description Cool MOS Power Transistor Feature New revolutionary high voltage technology

File Size 357.86K  /  11 Page

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    IRF1010EL IRF1010ES IRF1010ESTRL IRF1010ESTRR

IRF[International Rectifier]
Part No. IRF1010EL IRF1010ES IRF1010ESTRL IRF1010ESTRR
OCR Text ...Avalanche Rated G HEXFET(R) Power MOSFET D VDSS = 60V RDS(on) = 12m Description Advanced HEXFET(R) Power MOSFETs from Internatio...limited by max. junction temperature. (See fig. 11) Starting TJ = 25C, L = 260H RG = 25, IAS = 50A...
Description 60V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
60V Single N-Channel HEXFET Power MOSFET in a TO-262 package
Power MOSFET(Vdss=60V/ Rds(on)=12mohm/ Id=84A)
Power MOSFET(Vdss=60V, Rds(on)=12mohm, Id=84A)
Power MOSFET(Vdss=60V, Rds(on)=12mohm, Id=84A?)
Power MOSFET(Vdss=60V, Rds(on)=12mohm, Id=84A?

File Size 122.02K  /  10 Page

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    IRF1010E

International Rectifier
Part No. IRF1010E
OCR Text Power MOSFET l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175C Operating Temperature Fast Switch...limited by max. junction temperature. (See fig. 11) Pulse width 400s; duty cycle 2%. This is...
Description Power MOSFET(Vdss=60V,Rds(on)=12mohm,Id=84A?

File Size 143.91K  /  8 Page

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    IRF1010NL IRF1010NS IRF1010NSTRR IRF1010NSPBF IRF1010NSTRL IRF1010NLPBF

IRF[International Rectifier]
Part No. IRF1010NL IRF1010NS IRF1010NSTRR IRF1010NSPBF IRF1010NSTRL IRF1010NLPBF
OCR Text ...d Description l l HEXFET(R) Power MOSFET D IRF1010NS IRF1010NL VDSS = 55V RDS(on) = 11m G S Advanced HEXFET (R) Power MOSFETs...limited by max. junction temperature. ( See fig. 11 ) Starting TJ = 25C, L = 270H RG = 25, IAS ...
Description 55V Single N-Channel HEXFET Power MOSFET in a TO-262 package
55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
Power MOSFET(Vdss = 55 V/ Rds(on)=11mohm/ Id=85A)
Power MOSFET(Vdss = 55 V, Rds(on)=11mohm, Id=85A)
Power MOSFET(Vdss = 55 V, Rds(on)=11mohm, Id=85A?)
Power MOSFET(Vdss = 55 V, Rds(on)=11mohm, Id=85A?

File Size 144.82K  /  10 Page

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    IRF1010N

IRF[International Rectifier]
Part No. IRF1010N
OCR Text Power MOSFET l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175C Operating Temperature Fast Switch...limited by max. junction temperature. ( See fig. 11 ) ISD 43A, di/dt 210A/s, VDD V(BR)DSS, ...
Description Power MOSFET(Vdss=55V, Rds(on)=11mohm, Id=85A?)
Power MOSFET(Vdss=55V, Rds(on)=11mohm, Id=85A)

File Size 154.40K  /  8 Page

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