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Fairchild Semiconductor, Corp.
FAIRCHILD SEMICONDUCTOR CORP
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| Part No. |
H11AA3SM H11AA2M
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| OCR Text |
...mperature ( c) fig. 5 ctr vs. rbe (saturated) r be - base resistance (k ?) normalized ctr ( ctr rbe / ctr rbe(open) ) fig. 4 ctr vs. rbe (unsaturated) r be ?base resistance (k ?) normalized ctr ( ctr rbe / ctr rbe(open) ) fig. 6 ... |
| Description |
AC INPUT/PHOTOTRANSISTOR OPTOCOUPLERS 1 CHANNEL AC INPUT-TRANSISTOR OUTPUT OPTOCOUPLER
6-Pin DIP AC Input Phototransistor Output Optocoupler; Package: DIP-W; No of Pins: 6; Container: Bulk
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| File Size |
275.59K /
10 Page |
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ASI[Advanced Semiconductor]
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| Part No. |
TPV8100B
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| OCR Text |
...VCER PDISS TJ TSTG JC 12 A 40 V rbe = 10 215 W @ TC = 25 C -65 C to +200 C -65 C to +150 C 0.8 C/W
O O O O O O
1 = COLLECTOR #1 2 = COLLECTOR #2 3 = BASE #1 4 = BASE #2 5 = EMITTER CASE (COMMON)
CHARACTERISTICS
SYMBOL
BVCER BVCBO ... |
| Description |
NPN SILICON RF POWER TRANSISTOR
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| File Size |
23.74K /
1 Page |
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Siemens Semiconductor G...
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
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| Part No. |
Q62702-F1064 BFN23 Q62702-F254 Q62702-F219 Q62702-F250
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| OCR Text |
...tage Collector-emitter voltage, rbe = 2.7 k Emitter-base voltage Collector current Peak collector current Total power dissipation, TS = 71 C Junction temperature Storage temperature range Thermal Resistance Junction - ambient2) Junction - s... |
| Description |
PNP Silicon High-Voltage Transistor (Suitable for video output stages in TV sets and switching power supplies High breakdown voltage)
From old datasheet system
N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTORS
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| File Size |
127.42K /
4 Page |
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Fairchild Semiconductor, Corp.
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| Part No. |
CNY17-2FR2V-M
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| OCR Text |
...ma t a = 25?c fig. 5 ctr vs. rbe (unsaturated) (black package) fig. 6 ctr vs. rbe (unsaturated) (white package) r be - base resistance (k ?) r be - base resistance (k ?) normalized ctr ( ctr rbe / ctr rbe(open) ) normalized ctr ( c... |
| Description |
1 CHANNEL TRANSISTOR OUTPUT OPTOCOUPLER DIP-6
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| File Size |
349.13K /
20 Page |
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Fairchild Semiconductor, Corp.
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| Part No. |
CNY17-2F-M CNY17-2FR2-M CNY17-3F-M CNY17-3FR2-M CNY17-2FV-M
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| OCR Text |
...ma t a = 25?c fig. 5 ctr vs. rbe (unsaturated) (black package) fig. 6 ctr vs. rbe (unsaturated) (white package) r be - base resistance (k ?) r be - base resistance (k ?) normalized ctr ( ctr rbe / ctr rbe(open) ) normalized ctr ( c... |
| Description |
1 CHANNEL TRANSISTOR OUTPUT OPTOCOUPLER DIP-6
1 CHANNEL TRANSISTOR OUTPUT OPTOCOUPLER SURFACE MOUNT, DIP-6
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| File Size |
368.19K /
20 Page |
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Fairchild Semiconductor, Corp.
FAIRCHILD SEMICONDUCTOR CORP
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| Part No. |
CNY17-1F-M CNY17-1FV-M CNY17-1FR2-M
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| OCR Text |
...ma t a = 25?c fig. 5 ctr vs. rbe (unsaturated) (black package) fig. 6 ctr vs. rbe (unsaturated) (white package) r be - base resistance (k ?) r be - base resistance (k ?) normalized ctr ( ctr rbe / ctr rbe(open) ) normalized ctr ( c... |
| Description |
1 CHANNEL TRANSISTOR OUTPUT OPTOCOUPLER DIP-6
1 CHANNEL TRANSISTOR OUTPUT OPTOCOUPLER SURFACE MOUNT, DIP-6
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| File Size |
267.38K /
14 Page |
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Sanyo
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| Part No. |
2SB1324 2SD1998
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| OCR Text |
...)10A, IE=0 V(BR)CEO1 IC=(-)10A, rbe=
V(BR)CEO2
IC=(-)10mA, rbe= IF=0.5A
VF rbe
k
Electrical Connection
No.3130-2/4
2SB1324/2SD1998
No.3130-3/4
2SB1324/2SD1998
Specifications of any and all SANYO products describe... |
| Description |
NPN Epitaxial Planar Silicon Transistors Compact Motor Driver Applications
PNP Epitaxial Planar Silicon Transistors Compact Motor Driver Applications
PNP/NPN Epitaxial Planar Silicon Transistors
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| File Size |
90.92K /
4 Page |
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Hitachi,Ltd.
Hitachi Semiconductor
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| Part No. |
2SD2423
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| OCR Text |
... C = 100 A, IE = 0 I C = 10 mA, rbe = I C = 1.5 A, rbe = , L = 10 mH*1 I E = 50 mA, IC = 0 VCE = 40 V, rbe = VCE = 3 V, IC = 1 A*1 I C = 1 A, IB = 1 mA*1 I C = 1.5 A, IB = 1.5 mA*1 I C = 1 A, IB = 1 mA*1 I C = 1.5 A, IB = 1.5 mA*1 I D = 1... |
| Description |
Silicon NPN Epitaxial, Darlington
Silicon NPN Epitaxial/ Darlington
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| File Size |
33.60K /
6 Page |
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SANYO
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| Part No. |
2SC5832
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| OCR Text |
...V, IC=1A VCE=5V, IC=1A L=100mH, rbe=100 IC=1A, IB=4mA IC=1A, IB=4mA IC=100A, IE=0 IC=1mA, rbe= See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. 55 55 25 1.0 65 65 0.2 3.5 0.5 1.5 2.0 75 75 1000 4000 180 MH... |
| Description |
Darlington Transistors
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| File Size |
40.86K /
5 Page |
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Price and Availability
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