s21e2 pdf Datasheet P8 Full Text Search --- IC-ON-LINE


	Part Number	Hot Search : E3000 E120C 2SD1824G CEB8030L TB0207A Z0103 NE502AF 2N6489
	Product Description
	Full Text Search

s21e2 Datasheet PDF File

For s21e2 Found Datasheets File :: 216 Search Time::1.438ms
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | <8> | 9 | 10 | 11 | 12 | 13 | 14 | 15 |

				Sanyo Semicon Device
Part No.	SBFP420B
OCR Text	...ration. Bottom View High Gain : s21e2=17dB typ (f=1.8GHz). 0.35 0.2 Ultrasmall (1006 size), thin (0.5mm) leadless package. 0.05 0.25 [SBFP420B] Side View 3 0.05 4 0.65 0.4 0.25 0.05 2 1 0.05 0.5 Top View 0....
Description	Ultrahigh-Frequency Transistors UHF to C Band Low Noise Amplifier, Oscillation Applications From old datasheet system
File Size	54.12K / 15 Page	View it Online	Download Datasheet

				Sanyo Semicon Device
Part No.	ENA1064A
OCR Text	...1.0dB typ (f=1GHz). High gain : s21e2=12dB typ (f=1GHz). High cutoff frequency : fT=7GHz typ. Ultrasmall (1006size), slim (0.5mm) leadless package. Halogen free compliance (UL94 HB). Specifications Absolute Maximum Ratings at Ta=25C Pa...
Description	NPN Epitaxial Planar Silicon Transistor VHF to UHF Wide-Band Low-Noise Amplifier Applications
File Size	45.55K / 5 Page	View it Online	Download Datasheet

				SANYO[Sanyo Semicon Device]
Part No.	SBFP405B
OCR Text	... operating voltage. High gain : s21e2=18dB typ (f=1.8GHz). Ultraminiature (1006 size) and thin (0.5mm) leadless package. 0.65 0.05 0.4 0.25 0.05 2 0.5 1 0.05 4 3 1.0 (Bottom view) Marking 0.5 1 ...
Description	UHF to C Band Low-Noise Amplifier Osc. Applications
File Size	21.36K / 2 Page	View it Online	Download Datasheet

				Inchange Semiconductor Company Limited
Part No.	2SC2954
OCR Text	...nd High Gain NF = 2.3 dB TYP. ; s21e2 = 20 dB TYP. @ f = 200 MHz NF = 2.4 dB TYP. ; s21e2 = 12.5 dB TYP. @ f = 500 MHz APPLICATIONS *Designed for low noise wide band amplifier and buffer amplifier of OSC, for VHF and CATV band. ABSOLU...
Description	isc Silicon NPN RF Transistor
File Size	215.57K / 5 Page	View it Online	Download Datasheet

				Inchange Semiconductor Company Limited
Part No.	2SC2408
OCR Text	... TYP. ;@ f = 200 MHz High Gain s21e2 = 21 dB TYP. ;@ f = 200 MHz APPLICATIONS Designed for use in high frequency wide band amplifier. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage ...
Description	isc Silicon NPN RF Transistor
File Size	55.51K / 2 Page	View it Online	Download Datasheet

				NEC[NEC] NEC Corp.
Part No.	UPA801 UPA801T UPA801TC UPA801TC-T1 PA801TC
OCR Text	...ENT 10.00 Insertion Power Gain s21e2 (dB) Gain Bandwidth Product fT (GHz) Collector Current IC (mA) INSERTION POWER GAIN vs. COLLECTOR CURRENT 14.00 VCE = 3 V f = 1 GHz VCE = 3 V f = 1 GHz 12.00 10.00 8.00 6.00 4.00 2.00 1.00 ...
Description	NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC5006 FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD NPN Epitaxial Transisitor(NPN外延晶体
File Size	74.07K / 12 Page	View it Online	Download Datasheet

				Sanyo Semicon Device
Part No.	EC3H04B
OCR Text	...rd Transfer Gain, S21e -- dB s21e2 -- IC f=1GHz 2 Forward Transfer Gain, S21e -- dB 16 14 12 10 8 6 s21e2 -- IC f=2GHz 14 12 10 8 6 4 2 0 1.0 =3V VCE 1V 3V V CE= 1V 4 2 0 1.0 2 3 5 7 10 2 3 ...
Description	High-Frequency Low-Noise Amplifier and OSC Applications NPN Epitaxial Planar Type Silicon Transistor
File Size	34.12K / 6 Page	View it Online	Download Datasheet

				NEC Corp. NEC[NEC]
Part No.	UPA810TC UPA810TC-T1 UPA810
OCR Text	....00 14.00 Insertion Power Gain s21e2 (dB) DC Current Gain hFE 100 0 10 0.1 1 10 100 Collector Current IC (mA) INSERTION POWER GAIN vs. COLLECTOR CURRENT VCE = 3 V f = 1 GHz Gain Bandwidth Product fT (GHz) 5.00 4....
Description	NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC5006 FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD
File Size	51.55K / 12 Page	View it Online	Download Datasheet

				Sanyo Electric Co., Ltd. Sanyo Semicon Device
Part No.	EC3H06B
OCR Text	...B typ (f=1.5GHz). * High gain : s21e2=10dB typ (f=1.5GHz). * High cutoff frequency : fT=11GHz typ. * Low voltage, low current operation. (VCE=1V, IC=1mA) : fT=7GHz typ. : s21e2=5.5dB typ (f=1.5GHz). * Ultrasmall (1006size), slim (0.5mm) lea...
Description	UHF to S Band Low-Noise Amplifier and OSC Applications 超高频的S波段低噪声放大器和OSC应用 NPN Epitaxial Planar Silicon Transistor UHF to S Band Low-Noise Amplifier and OSC Applications
File Size	43.40K / 5 Page	View it Online	Download Datasheet

				SANYO
Part No.	2SC5245
OCR Text	...B typ (f=1.5GHz). * High gain : s21e2=10dB typ (f=1.5GHz). * High cutoff frequency : fT=11GHz typ. * Low-voltage, low-current operation (VCE=1V, IC=1mA) : fT=7GHz type. : s21e2=5.5dB typ (f=1.5GHz). Package Dimensions unit:mm 2059B [2S...
Description	NPN Epitaxial Planar Silicon Transistor UHF to S-Band Low-Noise Amplifier OSC Applications
File Size	159.78K / 6 Page	View it Online	Download Datasheet

For s21e2 Found Datasheets File :: 216 Search Time::1.438ms
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | <8> | 9 | 10 | 11 | 12 | 13 | 14 | 15 |