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				White Electronic Designs Corporation
Part No.	W3E32M64S-200BC W3E32M64S-200BI W3E32M64S-200BM W3E32M64S-250BC W3E32M64S-250BI W3E32M64S-250BM W3E32M64S-266BC W3E32M64S-266BI W3E32M64S-266BM W3E32M64S-333BC W3E32M64S-333BI W3E32M64S-333BM W3E32M64S-XBX
OCR Text	...used to select the bank and the starting column location for the burst access. The DDR SDRAM provides for programmable READ or WRITE burst lengths of 2, 4, or 8 locations. An auto precharge function may be enabled to provide a selftimed row...
Description	32Mx64 DDR SDRAM
File Size	643.48K / 17 Page	View it Online	Download Datasheet

				WEDC[White Electronic Designs Corporation]
Part No.	WED3DL328V10BC WED3DL328V10BI WED3DL328V8BC WED3DL328V8BI WED3DL328V7BI WED3DL328V WED3DL328V7BC
OCR Text	... 0 0 1 1 1 1 A1 0 0 1 1 0 0 1 1 starting Column Address A0 0 1 A0 0 1 0 1 A0 0 1 0 1 0 1 0 1 Order of Accesses Within a Burst Type = Sequential 0-1 1-0 0-1-2-3 1-2-3-0 2-3-0-1 3-0-1-2 0-1-2-3-4-5-6-7 1-2-3-4-5-6-7-0 2-3-4-5-6-7-0-1 3-4-5-6-...
Description	8Mx32 SDRAM
File Size	1,036.74K / 27 Page	View it Online	Download Datasheet

				Fairchild Semiconductor
Part No.	FDP8441
OCR Text	....0 68 99 V V ns nC Notes: 1: starting TJ = 25oC, L = 0.46mH, IAS = 64A. 2: Pulse width = 100s. This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy of the r...
Description	N-Channel PowerTrench MOSFET (40V, 80A, 2.7mohm)
File Size	277.95K / 7 Page	View it Online	Download Datasheet

				Fairchild Semiconductor
Part No.	FDS8884
OCR Text	... : 1 on letter size paper 2: starting TJ = 25C, L = 1mH, IAS = 8A, VDD = 27V, VGS = 10V. 3: Pulse Test:Pulse Width <300s, Duty Cycle <2%. 2 FDS8884 Rev. A www.fairchildsemi.com FDS8884 N-Channel PowerTrench(R) MOSFET Typical ...
Description	N-Channel PowerTrench MOSFET 30V, 8.5A, 23mOhm
File Size	296.49K / 6 Page	View it Online	Download Datasheet

				ONSEMI[ON Semiconductor]
Part No.	NTD32N06-1 NTD32N06-1G NTD32N06T4G NTD32N06 NTD32N06G NTD32N06T4 NTD32N06-001
OCR Text	...in-to-Source Avalanche Energy - starting TJ = 25C (Note 3) (VDD = 50 Vdc, VGS = 10 Vdc, L = 1.0 mH, IL(pk) = 25 A, VDS = 60 Vdc, RG = 25 W) Thermal Resistance - Junction-to-Case - Junction-to-Ambient (Note 1) - Junction-to-Ambient (Note 2) ...
Description	Power MOSFET 32 Amps, 60 Volts 32 Amps, 60 Volts, N−Channel DPAK
File Size	68.71K / 8 Page	View it Online	Download Datasheet

				ONSEMI[ON Semiconductor]
Part No.	NTF3055-100T1 NTF3055-100T3 NTF3055-100T3G NTF3055-100T3LF NTF3055-100
OCR Text	...in-to-Source Avalanche Energy - starting TJ = 25C (VDD = 25 Vdc, VGS = 10 Vdc, IL(pk) = 7.0 Apk, L = 3.0 mH, VDS = 60 Vdc) Thermal Resistance - Junction-to-Ambient (Note 1) - Junction-to-Ambient (Note 2) Maximum Lead Temperature for Solderi...
Description	Power MOSFET 3.0 Amps 60 Volts N−Channel
File Size	129.80K / 6 Page	View it Online	Download Datasheet

				NEC Corp. NEC[NEC]
Part No.	UPA2713GR
OCR Text	...x 1 inch x 0.8 mm), PW = 10 sec starting Tch = 25C, VDD = -15 V, RG = 25 , L = 100 H, VGS = -20 0 V Remark Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately degrade the device ope...
Description	SWITCHING N- AND P-CHANNEL POWER MOS FET SWITCHING P-CHANNEL POWER MOSFET
File Size	75.62K / 7 Page	View it Online	Download Datasheet

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