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For swiching Found Datasheets File :: 274 Search Time::1.969ms
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				http:// IRF[International Rectifier]
Part No.	IRGS8B60KPBF IRGSL8B60KPBF IRGB8B60KPBF
OCR Text	...0KPbF 600 500 400 Energy (J) swiching Time (ns) tdOFF 1000 300 200 EOFF 100 tF tdON tR EON 100 0 0 5 10 IC (A) 15 20 10 0 5 10 15 20 IC (A) Fig. 12 - Typ. Energy Loss vs. IC TJ = 150C; L=1.1mH; VCE= 40...
Description	INSULATED GATE BIPOLAR TRANSISTOR
File Size	447.16K / 13 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRGSL4B60KD1 IRGS4B60KD1 IRGB4B60KD1
OCR Text	...5 IRGB/S/SL4B60KD1 350 300 swiching Time (ns) 1000 250 Energy (J) EON 100 td OFF tF tdON 10 200 150 100 50 0 1 2 3 4 5 6 7 8 9 10 IC (A) EOFF tR 1 0 2 4 6 8 10 IC (A) Fig. 13 - Typ. Energy Loss vs. IC TJ = 1...
Description	600V Low-Vceon Non Punch Through Copack IGBT in a TO-262 package 600V Low-Vceon Non Punch Through Copack IGBT in a D2-Pak package 600V Low-Vceon Non Punch Through Copack IGBT in a TO-220 FullPak package INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
File Size	373.85K / 15 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRGSL6B60KPBF IRGB6B60KPBF IRGS6B60KPBF
OCR Text	...0 Energy (J) 1000 tdOFF swiching Time (ns) EON 100 400 300 200 100 0 0 5 10 IC (A) 15 20 EOFF tF tdON 10 tR 1 0 5 10 15 20 IC (A) Fig. 12 - Typ. Energy Loss vs. IC TJ = 150C; L=1.4mH; VCE= 400V RG= 100; VGE=...
Description	INSULATED GATE BIPOLAR TRANSISTOR
File Size	288.98K / 14 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRGS10B60KDPBF IRGSL10B60KDPBF IRGB10B60KDPBF
OCR Text	... 500 400 300 200 100 0 0 5 swiching Time (ns) 100 EON tdON tF 10 0 tR 5 10 15 20 25 10 IC (A) 15 20 25 IC (A) Fig. 13 - Typ. Energy Loss vs. IC TJ = 150C; L=200H; VCE= 400V RG= 47; VGE= 15V Fig. 14 - ...
Description	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
File Size	362.90K / 15 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRGS10B60KD IRGSL10B60KD IRGB10B60KD
OCR Text	... 500 400 300 200 100 0 0 5 swiching Time (ns) 100 EON tdON tF 10 0 tR 5 10 15 20 25 10 IC (A) 15 20 25 IC (A) Fig. 13 - Typ. Energy Loss vs. IC TJ = 150C; L=200H; VCE= 400V RG= 47; VGE= 15V Fig. 14 - ...
Description	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
File Size	321.11K / 15 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRGS15B60KD IRGSL15B60KD IRGB15B60KD
OCR Text	...0 400 200 0 0 10 EOFF EON swiching Time (ns) tdOFF 100 tdON tF tR 0 10 20 30 40 50 20 IC (A) 30 40 50 10 IC (A) Fig. 13 - Typ. Energy Loss vs. IC TJ = 150C; L=200H; VCE= 400V RG= 22; VGE= 15V Fig. 14 ...
Description	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
File Size	322.37K / 16 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRGS30B60 IRGSL30B60K IRGS30B60K IRGB30B60K
OCR Text	...0 0 0 20 40 IC (A) 60 80 EON swiching Time (ns) tdOFF 100 td ON tF tR 10 0 20 40 60 80 IC (A) Fig. 12 - Typ. Energy Loss vs. IC TJ = 150C; L=200H; VCE= 400V, RG= 10; VGE= 15V Fig. 13 - Typ. Switching Time vs. IC TJ = 1...
Description	600V UltraFast 10-30 kHz IGBT in a TO-262 package 600V UltraFast 10-30 kHz IGBT in a D2-Pak package 600V UltraFast 10-30 kHz IGBT in a TO-220AB package INSULATED GATE BIPOLAR TRANSISTOR
File Size	325.30K / 13 Page	View it Online	Download Datasheet

				International Rectifier, Corp. IRF[International Rectifier]
Part No.	IRGS6B60KD IRGSL6B60KD IRGB6B60KD
OCR Text	...0 Energy (J) 1000 tdOFF swiching Time (ns) EON 100 400 300 200 100 0 0 5 10 IC (A) 15 20 EOFF tF tdON 10 tR 1 0 5 10 15 20 IC (A) Fig. 13 - Typ. Energy Loss vs. IC TJ = 150C; L=1.4mH; VCE= 400V RG= 100; VGE=...
Description	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE 绝缘栅双极型晶体管，超快软恢复二极管 From old datasheet system
File Size	304.25K / 15 Page	View it Online	Download Datasheet

				International Rectifier, Corp. IRF[International Rectifier]
Part No.	IRGS6B60K IRGSL6B60K IRGB6B60K
OCR Text	...0 Energy (J) 1000 tdOFF swiching Time (ns) EON 100 400 300 200 100 0 0 5 10 IC (A) 15 20 EOFF tF tdON 10 tR 1 0 5 10 15 20 IC (A) Fig. 12 - Typ. Energy Loss vs. IC TJ = 150C; L=1.4mH; VCE= 400V RG= 100; VGE=...
Description	INSULATED GATE BIPOLAR TRANSISTOR 绝缘栅双极晶体管
File Size	242.45K / 13 Page	View it Online	Download Datasheet

				http:// IRF[International Rectifier]
Part No.	IRGS8B60K IRGSL8B60K IRGB8B60K
OCR Text	...8B60K 600 500 400 Energy (J) swiching Time (ns) tdOFF 1000 300 200 EOFF 100 tF tdON tR EON 100 0 0 5 10 IC (A) 15 20 10 0 5 10 15 20 IC (A) Fig. 12 - Typ. Energy Loss vs. IC TJ = 150C; L=1.1mH; VCE= 40...
Description	INSULATED GATE BIPOLAR TRANSISTOR 600V UltraFast 10-30 kHz Copack IGBT in a D2-Pak package 600V UltraFast 10-30 kHz Copack IGBT in a TO-262 package 600V UltraFast 10-30 kHz Copack IGBT in a TO-220AB package
File Size	465.99K / 13 Page	View it Online	Download Datasheet

For swiching Found Datasheets File :: 274 Search Time::1.969ms
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