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For tcc Found Datasheets File :: 1189 Search Time::1.594ms
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				SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
Part No.	K4S561632A K4S561632A-TC_L1H K4S561632A-TC_L1L K4S561632A-TC_L75 K4S561632A-TC_L80 K4S561632A-TC/L1H K4S561632A-TC/L1L K4S561632A-TC/L75 K4S561632A-TC/L80
OCR Text	...C(min) IO = 0 mA CKE VIL(max), tcc = 10ns CKE & CLK VIL(max), tcc = CKE VIH(min), CS VIH(min), tcc = 10ns Input signals are changed one time during 20ns CKE VIH(min), CLK VIL(max), tcc = Input signals are stable CKE VIL(max), tcc =...
Description	256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM LVTTL
File Size	125.82K / 10 Page	View it Online	Download Datasheet

				Samsung Semiconductor Co., Ltd. SAMSUNG[Samsung semiconductor] Samsung Electronic
Part No.	K4S561632B K4S561632B-TC_L1L K4S561632B-TC_L1H K4S561632B-TC_L75 K4S561632B-TC/L1L K4S561632B-TC/L75 K4S561632B-TC/L1H
OCR Text	...C(min) IO = 0 mA CKE VIL(max), tcc = 10ns CKE & CLK VIL(max), tcc = CKE VIH(min), CS VIH(min), tcc = 10ns Input signals are changed one time during 20ns CKE VIH(min), CLK VIL(max), tcc = Input signals are stable CKE VIL(max), tcc =...
Description	256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM LVTTL 56Mbit SDRAM米16 × 4银行同步DRAM LVTTL
File Size	130.19K / 11 Page	View it Online	Download Datasheet

				SAMSUNG[Samsung semiconductor] Samsung Electronic
Part No.	K4S561632D K4S561632D-TC_L75 K4S561632D-TC_L1H K4S561632D-TC_L1L K4S561632D-TC_L60 K4S561632D-TC_L7C K4S561632D-TC/L1H K4S561632D-TC/L1L K4S561632D-TC/L60 K4S561632D-TC/L75 K4S561632D-TC/L7C K4S561632D-TC75000
OCR Text	...(min) IO = 0 mA CKE V IL(max), tcc = 10ns CKE & CLK VIL(max), tcc = CKE V IH(min), CS VIH(min), tcc = 10ns Input signals are changed one time during 20ns CKE V IH(min), CLK VIL(max), tcc = Input signals are stable CKE V IL(max), tC...
Description	256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM LVTTL
File Size	59.61K / 11 Page	View it Online	Download Datasheet

				SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
Part No.	K4S561633F K4S561633F-C K4S561633F-E K4S561633F-F1H K4S561633F-F1L K4S561633F-F75 K4S561633F-G K4S561633F-L K4S561633F-N K4S561633F-X K4S561633F-XE
OCR Text	...C(min) IO = 0 mA CKE VIL(max), tcc = 10ns -1H -1L Unit Note ICC1 90 85 85 mA 1 ICC2P 0.5 mA 0.5 15 mA 10 6 mA 6 25 mA ICC2PS CKE & CLK VIL(max), tcc = ICC2N CKE VIH(min), CS VIH(min), tcc = 10ns Input signals...
Description	4M x 16Bit x 4 Banks Mobile SDRAM in 54BOC
File Size	111.69K / 12 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD.
Part No.	K4S56163LC K4S56163LC-RF
OCR Text	...C(min) IO = 0 mA CKE VIL(max), tcc = 10ns Test Condition -75 Operating Current (One Bank Active) Precharge Standby Current in power-down mode ICC1 75 CMOS SDRAM Version -1H 70 -1L 65 -15 60 Unit Note mA 1 ICC2P 0.5 ...
Description	16Mx16 Mobile SDRAM 54CSP CAP 680UF 50V ELECT FM RADIAL
File Size	59.21K / 8 Page	View it Online	Download Datasheet

				Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
Part No.	K4S56163LF K4S56163LF-F1H K4S56163LF-F1L K4S56163LF-F75 K4S56163LF-G K4S56163LF-L K4S56163LF-N K4S56163LF-XE K4S56163LF-ZC750 K4S56163LF-ZE1L0 K4S56163LF-ZN1L0
OCR Text	...C(min) IO = 0 mA CKE VIL(max), tcc = 10ns -1H -1L Unit Note ICC1 75 70 65 mA 1 ICC2P 0.5 mA 0.5 15 mA 10 6 mA 6 25 mA ICC2PS CKE & CLK VIL(max), tcc = ICC2N CKE VIH(min), CS VIH(min), tcc = 10ns Input signals...
Description	16M X 16 SYNCHRONOUS DRAM, 7 ns, PBGA54 16M X 16 SYNCHRONOUS DRAM, 5.4 ns, PBGA54 4M x 16Bit x 4 Banks Mobile SDRAM in 54BOC 4米16 × 4银行4BOC移动SDRAM
File Size	112.21K / 12 Page	View it Online	Download Datasheet

				Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
Part No.	K4S56163PF K4S56163PF-F1L K4S56163PF-F90 K4S56163PF-RG K4S56163PF-RG_F90 K4S56163PF-RG_F1L K4S56163PF-RG_F75 K4S56163PF-RG/F90 K4S56163PF-RG/F1L K4S56163PF-RG/F75 K4S56163PF-RF750 K4S56163PF-BF900 K4S56163PF-RG750 K4S56163PF-BG750 K4S56163PF-RF900
OCR Text	...C(min) IO = 0 mA CKE VIL(max), tcc = 10ns -90 -1L Unit Note ICC1 50 45 40 mA 1 ICC2P 0.3 mA 0.3 10 mA 1 5 mA 1 20 mA ICC2PS CKE & CLK VIL(max), tcc = ICC2N CKE VIH(min), CS VIH(min), tcc = 10ns Input signals ...
Description	16M X 16 SYNCHRONOUS DRAM, 6 ns, PBGA54 LEAD FREE, FBGA-54 16M X 16 SYNCHRONOUS DRAM, 7 ns, PBGA54 LEAD FREE, FBGA-54 16M X 16 SYNCHRONOUS DRAM, 6 ns, PBGA54 FBGA-54 4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA 4米16 × 4银行4FBGA移动SDRAM CAP 47UF 350V ELECT EB SMD
File Size	111.59K / 12 Page	View it Online	Download Datasheet

				Mitsubishi Electric Semiconductor
Part No.	M54543AFP
OCR Text	...75 Unit V V V V mA mA mW C C tcc=10ms : cycle time 0.2Hz or less Ta=75C RECOMMENDED OPERATING CONDITION (Ta=25C, unless otherwise noted) Symbol VCC IO VIH VIL tB t j (shut) Parameter Supply voltage Continuous output current "H" input...
Description	Bi-DIRECTIONAL MOTOR DRIVER WITH BRAKE FUNCTION AND THERMAL SHUT DOWN FUNCTION
File Size	73.22K / 4 Page	View it Online	Download Datasheet

				ETC[ETC] CIRRUS[Cirrus Logic]
Part No.	CS61577 CS61577-IL1 CS61577-IP1 CDB615304A CDB61538 CDB61535 CDB61534 CDB61575 CDB61577 CDB615305A CDB61535A CDB61538A CDB61574 CDB61574A
OCR Text	... Symbol tdc tcdh tcl tch tr, tf tcc tcch tcwh tcdv tcdz tsu4 th4 tpcsl Min 50 50 240 240 50 50 250 50 50 250 Typ 100 - Max 50 200 - Units ns ns ns ns ns ns ns ns ns ns ns ns ns (Note 33) tr tf Any Digital Output 9...
Description	T1/E1 LINE INTERFACE
File Size	628.08K / 44 Page	View it Online	Download Datasheet

				Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
Part No.	KM48S8030D KM48S8030DT-GFA KM48S8030DT-GFL KM48S8030DT-GF8
OCR Text	...CC3N ICC4 Before CKE VIL(max), tcc = 15ns CKE VIH(min), CS VIH(min), tcc = 15ns Input signals are changed one time during 30ns 2 Banks activated After CKE VIL(max), tcc = 10ns CKE VIH(min), CS VIH(min), tcc = 10ns Input signals are ch...
Description	2M x 8bit x 4 banks synchronous DRAM, 3.3V power supply, LVTTL, 125MHz 2M x 8bit x 4 banks synchronous DRAM, 3.3V power supply, LVTTL, 133MHz 64Mbit SDRAM 2M x 8Bit x 4 Banks Synchronous DRAM LVTTL 64Mbit SDRAM00万8位4银行同步DRAM LVTTL 2M x 8bit x 4 banks synchronous DRAM, 3.3V power supply, LVTTL, 100MHz
File Size	116.15K / 11 Page	View it Online	Download Datasheet

For tcc Found Datasheets File :: 1189 Search Time::1.594ms
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