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test formation Datasheet PDF File

For test formation Found Datasheets File :: 3435 Search Time::1.407ms
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				Diodes Incorporated
Part No.	PDS3100Q-13 PDS3100Q-7
OCR Text	...eristic symbol min typ max unit test condition reverse breakdown voltage (note 9) v (br)r 100 ? ? v i r = 0.2ma forward voltage v f ? 0.71 0.76 v i f = 3a, t j = +25 c ? 0.61 0.65 i f = 3a, t j = +100 c ? 0.57 ...
Description	3A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER POWERDI?5
File Size	203.02K / 5 Page	View it Online	Download Datasheet

				Sirenza Microdevices, Inc SIRENZA[SIRENZA MICRODEVICES]
Part No.	SGA-5389 SGA-5389Z
OCR Text	...sist ance (junct ion t o lead) test Conditions: VS = 8 V RBIAS = 75 Ohms I RL O RL NF VD ID RTH, j-l 1950 MHz 1950 MHz 1950 MHz 3. 1 54 27. 6 15. 9 3. 5 3. 6 60 97 4. 1 66 ID = 60 mA Typ. TL = 25C OIP3 Tone Spacing = 1 MHz, ...
Description	DC-4500 MHz, Cascadable SiGe HBT MMIC Amplifier
File Size	82.51K / 4 Page	View it Online	Download Datasheet

				Diodes Incorporated
Part No.	74LV132A 74LV132AS14-13 74LV132AT14-13
OCR Text	...teristics symbol parameter test conditions v cc t a = -40 to +85c t a = -40 to +125c unit min max min max v t+ positive going threshold ? 2.5 v 1 1.75 1 1.75 v ? 3.3 v 1.31 2.31 1.31 2.31 ? 5.0 v 1.95 3.5 1.9...
Description	QUADRUPLE 2-INPUT NAND GATES WITH SCHMITT TRIGGER INPUTS
File Size	309.14K / 9 Page	View it Online	Download Datasheet

				Diodes Incorporated
Part No.	DMG3420UQ-7 DMG3420U-15
OCR Text	...ing for sat (shanghai assembly/ test site) = date code marking for cat (chengdu assembly/ test site) y or = year (ex: a = 2013) m = month (ex: 9 = september) g31 ym sot23 e3 chengdu a/t site shanghai a/t site g31 ym y ym...
Description	N-CHANNEL ENHANCEMENT MODE MOSFET
File Size	215.34K / 6 Page	View it Online	Download Datasheet

				Toshiba Semiconductor
Part No.	SSM3K329R-14
OCR Text	...iability data (i.e. reliability test report and estimated failure rate, etc). note 1: the channel temperature should not exceed 150 c dur...formation in this document, and related hardware, software and systems (collectively "product") wi...
Description	TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type
File Size	226.00K / 7 Page	View it Online	Download Datasheet

				http:// SIRENZA[SIRENZA MICRODEVICES] Sirenza Microdevices, Inc
Part No.	SBA-4089Z SBA-4089
OCR Text	...h e r m a l R e s i s ta n c e test Conditions: 1dB O IP P 3 OUT B a n d w i d th IR L ORL NF V D ID R T H , j- l ( ju n c ti o n to le a d ) VS = 8 V RBIAS = 39 Ohms ID = 80 mA Typ. TL = 25C OIP3 Tone Spa...
Description	DC-5 GHz, Cascadable InGaP/GaAs HBT MMIC Amplifier
File Size	310.34K / 5 Page	View it Online	Download Datasheet

				TOSHIBA
Part No.	HN2E04F
OCR Text	...iability data (i.e. reliability test report and estimated failure rate, etc). *total rating: power dissipation per element should not exce...formation in this document, and related hardware, software a nd systems (collectively "product") wi...
Description	Multi-chip discrete device (PNP SW diode)
File Size	322.80K / 8 Page	View it Online	Download Datasheet

				Diodes Incorporated
Part No.	DMN3404LQ-7 DMN3404L-15
OCR Text	...ing for sat (shanghai assembly/ test site) = date code marking for cat (chengdu assembly/ test site) y or = year (ex: a = 2013) m = month (ex: 9 = september) e3 chengdu a/t site shanghai a/t site 34n ym 34n ym ym y d...
Description	N-CHANNEL ENHANCEMENT MODE MOSFET
File Size	341.98K / 8 Page	View it Online	Download Datasheet

For test formation Found Datasheets File :: 3435 Search Time::1.407ms
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