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Directed Energy
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| Part No. |
501N04A
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| OCR Text |
...c = 25C, pulse width limited by tjm Tc = 25C Tc = 25C IS IDM, di/dt 100A/s, VDD VDSS, Tj 150C, RG = 0.2 IS = 0
PDHS
VDGR
VGS VGSM ID25 IDM IAR EAR dv/dt PDHS PDAMB TJ tjm Tstg TL Weight Symbol
DRAIN
Tc = 25C Derate 4.4W/C... |
| Description |
N-Channel Enhancement Mode Avalanche Rated Low Qg and Rg High dv/dt Nanosecond Switching RF Power MOSFET
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| File Size |
106.81K /
3 Page |
 View
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IXYS, Corp.
IXYS[IXYS Corporation]
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| Part No. |
IXFH4N100 IXFT4N100 IXFH4N100Q IXFT4N100Q
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| OCR Text |
...D25 IDM IAR EAR EAS dv/dt PD TJ tjm Tstg TL Md Weight 1.6 mm (0.063 in) from case for 10 s Mounting torque TO-247 TO-268 IS IDM, di/dt 100 A/ms, VDD VDSS, TJ 150C, RG = 2 W TC = 25C Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGS... |
| Description |
N-Channel Enhancement Mode HiPerFET Power MOSFET(最大漏源击穿电000V,导通电.0Ω的N沟道增强型HiPerFET功率MOSFET) 4 A, 1000 V, 3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD
TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 4A I(D) | TO-247AD
HiPerFET Power MOSFETs Q-Class
Discrete MOSFETs: HiPerFET Power MOSFETS
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| File Size |
85.93K /
4 Page |
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it Online |
Download Datasheet |
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http://
IXYS[IXYS Corporation]
IXYS, Corp.
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| Part No. |
IXFN26N90 IXFN25N90 IXFN-26N90 IXFN-25N90
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| OCR Text |
...D25 IDM IAR EAR EAS dv/dt PD TJ tjm Tstg TJ VISOL Md Weight Symbol Test Conditions 1.6 mm (0.63 in) from case for 10 s 50/60 Hz, RMS IISOL 1 mA t = 1 min t=1s Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGS = 1 MW Continuous Transien... |
| Description |
Discrete MOSFETs: HiPerFET Power MOSFETS
HiPerFETTM Power MOSFETs Single Die MOSFET
HiPerFET Power MOSFETs Single Die MOSFET 25 A, 900 V, 0.33 ohm, N-CHANNEL, Si, POWER, MOSFET
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| File Size |
140.57K /
4 Page |
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it Online |
Download Datasheet |
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