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TY Semiconductor Co., L...
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| Part No. |
FDG6303N
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| Description |
Very low level gate drive requirements allowing direct operation in 3 V circuits (VGS(th) < 1.5 V).
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| File Size |
143.03K /
2 Page |
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it Online |
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Vishay Intertechnology, Inc. VISAY[Vishay Siliconix]
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| Part No. |
SI7392DP-T1 SI7392DP
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| Description |
N-Ch. Reduced Qg, Fast Switching WFET® VDS = 30V; VGS = ± 20V N沟道Qg,快速开关WFET ® ,VDS=30V; VGS=±20V N-Channel Reduced Qg, Fast Switching WFET N-Channel Reduced Qg/ Fast Switching WFET
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| File Size |
54.11K /
5 Page |
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it Online |
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TY Semicondutor TY Semiconductor Co., Ltd
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| Part No. |
FDN5630
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| Description |
N-Channel Power Trench MOSFET VDS (V) = 60V RDS(ON)100 m (VGS = 10V) Optimized for use in high frequency DC/DC converters
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| File Size |
150.06K /
2 Page |
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it Online |
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FAIRCHILD SEMICONDUCTOR CORP
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| Part No. |
FDD10AN06A0NL
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| Description |
Discrete Automotive N-Channel UltraFET Trench MOSFET, 60V, 50A, 0.0105 Ohms @ VGS = 10V, TO-252/DPAK Package
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| File Size |
242.66K /
11 Page |
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it Online |
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TY Semiconductor Co., Ltd
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| Part No. |
KPA1764
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| Description |
Dual chip type Low on-state resistance (VGS = 10 V, ID = 3.5 A) Low input capacitance
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| File Size |
99.55K /
2 Page |
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it Online |
Download Datasheet
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Price and Availability
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