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Microsemi, Corp. ADPOW[Advanced Power Technology]
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Part No. |
APT20M38SVFR APT20M38BVFRG APT20M38BVFR06 APT20M38SVFRG APT20M38BVFR APT20M38BVFR_06
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OCR Text |
67A
APT20M38BVFR
APT20M38SVFR
0.038
APT20M38BVFRG* APT20M38SVFRG*
*G Denotes RoHS Compliant, Pb Free Terminal Finish.
BVFR D3PAK
TO-247
POWER MOS V (R)
FREDFET
Power MOS V(R) is a new generation of high voltage N-Ch... |
Description |
Power FREDFET; Package: D3 [S]; ID (A): 67; RDS(on) (Ohms): 0.038; BVDSS (V): 200; 67 A, 200 V, 0.038 ohm, N-CHANNEL, Si, POWER, MOSFET Power FREDFET; Package: TO-247 [B]; ID (A): 67; RDS(on) (Ohms): 0.038; BVDSS (V): 200; 67 A, 200 V, 0.038 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
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File Size |
148.00K /
4 Page |
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it Online |
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Mitsubishi Electric Corporation
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Part No. |
QM500HA-H
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OCR Text |
...open v eb =7v i c =500a, i b =0.67a Ci c =500a (diode forward voltage) i c =500a, v ce =2.5v v cc =300v, i c =500a, i b1 =1a, Ci b2 =10a transistor part diode part conductive grease applied typ. max. 5.0 5.0 500 2.5 3.5 1.8 3.... |
Description |
MITSUBISHI TRANSISTOR MODULES HIGH POWER SWITCHING USE INSULATED TYPE
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File Size |
73.42K /
5 Page |
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it Online |
Download Datasheet
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Mitsubishi Electric Sem... MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric Corporation
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Part No. |
QM500HA-H QM500
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OCR Text |
...itter open VEB=7V IC=500A, IB=0.67a -IC=500A (diode forward voltage) IC=500A, VCE=2.5V Min. -- -- -- -- -- -- 750 -- VCC=300V, IC=500A, IB1=1A, -IB2=10A -- -- Transistor part Diode part Conductive grease applied -- -- -- Typ. -- -- -- -- --... |
Description |
HIGH POWER SWITCHING USE INSULATED TYPE
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File Size |
65.35K /
5 Page |
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it Online |
Download Datasheet
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Price and Availability
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