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  0-50a Datasheet PDF File

For 0-50a Found Datasheets File :: 13496    Search Time::1.985ms    
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    2SJ413

SANYO[Sanyo Semicon Device]
Part No. 2SJ413
OCR Text ...unit:mm 2076B [2SJ413] 3.4 16.0 5.0 8.0 5.6 3.1 21.0 22.0 4.0 2.8 2.0 20.4 1.0 2.0 0.6 1 2 3 3.5 Specificati...50A, VGS=0 Conditions Ratings min typ 7600 2400 600 60 250 900 350 -1.0 -1.5 max Unit pF pF pF ns ns...
Description Ultrahigh-Speed Switching Applications

File Size 78.32K  /  4 Page

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    2SJ450

HITACHI[Hitachi Semiconductor]
Part No. 2SJ450
OCR Text ...)DSS V(BR)GSS Min -60 20 -- -- -0.5 -- -- 0.6 -- -- -- -- -- -- -- -- -- Typ -- -- -- -- -- 0.85 1.1 1.0 150 72 24 6 9 50 35 -0.9 100 Max --...50A/s Test conditions I D = -10 mA, VGS = 0 I G = 100 A, VDS = 0 VDS = -50 V, VGS = 0 VGS = 16 V, VD...
Description    Silicon P-Channel MOS FET

File Size 43.82K  /  9 Page

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    2SJ471

HITACHI[Hitachi Semiconductor]
Part No. 2SJ471
OCR Text ...I DSS I GSS Min -30 20 -- -- -1.0 -- -- 12 -- -- -- -- -- -- -- -- -- Typ -- -- -- -- -- 25 40 20 1700 950 260 20 290 170 130 -1.1 70 Max --...50A/s Test Conditions I D = -10mA, VGS = 0 I G = 100A, VDS = 0 VDS = -30 V, VGS = 0 VGS = 16V, VDS =...
Description Silicon P Channel DV-L MOS FET High Speed Power Switching

File Size 46.25K  /  10 Page

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    2SJ479 2SJ479L 2SJ479S

HITACHI[Hitachi Semiconductor]
Part No. 2SJ479 2SJ479L 2SJ479S
OCR Text ...I DSS I GSS Min -30 20 -- -- -1.0 -- -- 12 -- -- -- -- -- -- -- -- -- Typ -- -- -- -- -- 25 40 20 1700 950 260 20 290 170 130 -1.1 70 Max --...50A/s Test Conditions I D = -10mA, VGS = 0 I G = 100A, VDS = 0 VDS = -30 V, VGS = 0 VGS = 16V, VDS =...
Description Power switching MOSFET
Silicon P Channel DV-L MOS FET High Speed Power Switching
Silicon P Channel DVL MOS FET High Speed Power Switching

File Size 37.54K  /  7 Page

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    2SJ484

HITACHI[Hitachi Semiconductor]
Part No. 2SJ484
OCR Text ... * Low on-resistance R DS(on) = 0.18 typ. (at V GS = -10V, ID = -1A) * Low drive current * High speed switching * 4V gate drive devices. ...50A/s Test Conditions I D = -10mA, VGS = 0 I G = 100A, VDS = 0 VDS = -30 V, VGS = 0 VGS = 16V, VDS =...
Description Silicon P-Channel MOS FET High Speed Power Switching

File Size 42.55K  /  9 Page

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    2SJ496

HITACHI[Hitachi Semiconductor]
Part No. 2SJ496
OCR Text ... * Low on-resistance R DS(on) = 0.12 typ. (at VGS = -10 V, I D = -2.5 A) * 4V gate drive devices. * Large current capacitance ID = -5 A O...50A/s Test Conditions I D = -10mA, VGS = 0 I G = 100A, VDS = 0 VDS = -60 V, VGS = 0 VGS = 16V, VDS =...
Description Silicon P-Channel MOS FET High Speed Power Switching

File Size 49.68K  /  10 Page

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    2SJ504

HITACHI[Hitachi Semiconductor]
Part No. 2SJ504
OCR Text ... * Low on-resistance R DS(on) = 0.042 typ. * Low drive current. * 4V gate drive devices. * High speed switching. Outline TO-220FM D ...50A/s Test Conditions I D = -10mA, VGS = 0 I G = 100A, VDS = 0 VDS = -60 V, VGS = 0 VGS = 16V, VDS =...
Description    Silicon P Channel MOS FET High Speed Power Switching

File Size 50.21K  /  10 Page

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    2SJ505 2SJ505L 2SJ505S

Hitachi,Ltd.
HITACHI[Hitachi Semiconductor]
Part No. 2SJ505 2SJ505L 2SJ505S
OCR Text ... * Low on-resistance R DS(on) = 0.017 typ. * Low drive current. * 4V gate drive devices. * High speed switching. Outline LDPAK 4 D 1 G ...50A, VGS = 0 I F = -50A, VGS = 0 diF/ dt = 50A/s Test Conditions I D = -10mA, VGS = 0 I G = 100A, VD...
Description    Silicon P Channel MOS FET High Speed Power Switching
Silicon P Channel MOS FET High Speed Power Switching 硅P通道MOS FET的高速电源开
Power switching MOSFET

File Size 53.43K  /  10 Page

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    2SJ506 2SJ506L 2SJ506S

Renesas Electronics, Corp.
HITACHI[Hitachi Semiconductor]
Part No. 2SJ506 2SJ506L 2SJ506S
OCR Text ... * Low on-resistance R DS(on) = 0.065 typ. (at V GS = -10V, ID = -5A) * Low drive current * High speed switching * 4V gate drive devices. ...50A/s Test Conditions I D = -10mA, VGS = 0 I G = 100A, VDS = 0 VDS = -30 V, VGS = 0 VGS = 16V, VDS =...
Description    Silicon P Channel MOS FET High Speed Power Switching
Silicon P Channel MOS FET High Speed Power Switching 硅P通道MOS FET的高速电源开
Power switching MOSFET

File Size 49.71K  /  10 Page

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    2SJ517

HITACHI[Hitachi Semiconductor]
Part No. 2SJ517
OCR Text ... * Low on-resistance R DS(on) = 0.18 typ. (at V GS =-4V, ID =-1A) * Low drive current * High speed switching * 2.5V gate drive devices. ...50A/s Test Conditions I D = -10mA, VGS = 0 I G = 100A, VDS = 0 VDS = -20 V, VGS = 0 VGS = 8V, VDS = ...
Description Silicon P-Channel MOS FET
Silicon P Channel MOS FET High Speed Power Switching

File Size 42.79K  /  8 Page

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For 0-50a Found Datasheets File :: 13496    Search Time::1.985ms    
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