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  0.0041 Datasheet PDF File

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    Sanyo
Part No. 2SC4443
OCR Text ...ICBO IEBO hFE fT VCB=(-)30V, IE=0 VEB=(-)4V, IC=0 VCE=(-)1V, IC=(-)10mA VCE=(-)10V, IC=(-)10mA 60* 700 (400) Conditions Ratings min typ max (-)0.1 (-)0.1 270* MHz MHz Unit A A Continued on next page. Any and all SANYO products describ...
Description NPN Epitaxial Planar Silicon Transistors High-Speed Switching Applications
PNP/NPN Epitaxial Planar Silicon Transistors

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    Sanyo
Part No. 2SC4446
OCR Text ...ICBO IEBO hFE fT VCB=(-)40V, IE=0 VEB=(-)10V, IC=0 VCE=(-)6V, IC=(-)1mA VCE=(-)6V, IC=(-)1mA 135* 130 Conditions Ratings min typ max (-)0.1 (-)0.1 600* MHz Unit A A * : The 2SA1687/2SC4446 are classified by 1mA hFE as follows : 135 5 27...
Description PNP/NPN Epitaxial Planar Silicon Transistors

File Size 141.80K  /  5 Page

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    Sanyo
Part No. 2SC4449
OCR Text ...ns unit:mm 2003B [2SC4449] 5.0 4.0 4.0 0.45 0.5 0.6 2.0 0.45 0.44 14.0 5.0 1 2 3 Specifications Absolute Maximum Ratings at Ta = 25C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Vol...
Description NPN Triple Diffused Planar Silicon Transistor TV Camera Deflection, High-Voltage Driver Applications

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    Sanyo
Part No. 2SC4458
OCR Text ...nit:mm 2039D [2SC4458] 3.4 16.0 5.0 8.0 5.6 3.1 21.0 22.0 4.0 2.8 2.0 20.4 1.0 2.0 0.6 1 2 3 3.5 Specifications Absolute Maximum Ratings at Ta = 25C Parameter Collector-to-Base Voltage Collector-to-Emitter ...
Description NPN Triple Diffused Planar Silicon Transistor

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    2SC4927

HITACHI[Hitachi Semiconductor]
Part No. 2SC4927
OCR Text ... -- -- -- Max -- 500 25 5 1.5 2.0 0.5 Unit V A -- V V V s Test conditions IE = 500 mA, IC = 0 VCE = 1500 V, RBE = 0 VCE = 5 V, IC = 1 A IC = 6 A, IB = 1.2 A IC = 6 A, IB = 1.2 A IF = 8 A ICP = 6 A, IB1 = 1.2 A, IB2 -2.4 A, fH = 31.5 kHz ...
Description Silicon NPN Triple Diffused

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    2SC5025

Hitachi Semiconductor
Part No. 2SC5025
OCR Text ... Low output capacitance Cob = 5.0 pF typ Outline 2SC5025 Absolute Maximum Ratings (Ta = 25C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector powe...
Description High frequency amplifier
Silicon NPN Triple Diffused
From old datasheet system

File Size 17.73K  /  4 Page

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    Sanyo
Part No. 2SC5416LS
OCR Text ...s unit:mm 2079D [2SC5416] 10.0 3.2 3.5 7.2 4.5 2.8 16.1 16.0 3.6 0.9 1.2 14.0 1.2 0.75 123 0.7 Specifications Absolute Maximum Ratings at Ta = 25C Parameter Collector-to-Base Voltage Collector-to-Emit...
Description NPN Triple Diffused Planar Silicon Transistor Inverter Lighting Applications

File Size 41.69K  /  4 Page

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    2SC5513

PANASONIC CORP
Panasonic Semiconductor
Part No. 2SC5513
OCR Text ... Unit: mm 15.50.5 4.5 10.0 s Features q q q 3.20.1 5 26.50.5 3.00.3 High breakdown voltage, and high reliability through the use of a glass passivation layer High-speed switching Wide area of safe operation (ASO) (TC=25...
Description Silicon NPN triple diffusion mesa type(For horizontal deflection output)

File Size 33.46K  /  2 Page

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    2SC5514

PANASONIC[Panasonic Semiconductor]
Part No. 2SC5514
OCR Text ... Unit: mm 15.50.5 4.5 10.0 s Features q q q 3.20.1 5 26.50.5 3.00.3 High breakdown voltage, and high reliability through the use of a glass passivation layer High-speed switching Wide area of safe operation (ASO) (TC=25...
Description Silicon NPN triple diffusion mesa type(For horizontal deflection output)

File Size 33.45K  /  2 Page

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    2SC5515

Panasonic, Corp.
Panasonic Corporation
Panasonic Semiconductor
Part No. 2SC5515
OCR Text ... Unit: mm 15.50.5 4.5 10.0 s Features q q q 3.20.1 5 26.50.5 3.00.3 High breakdown voltage, and high reliability through the use of a glass passivation layer High-speed switching Wide area of safe operation (ASO) (TC=25...
Description Silicon NPN triple diffusion mesa type(For horizontal deflection output) 17 A, 600 V, NPN, Si, POWER TRANSISTOR

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