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  0.0054 Datasheet PDF File

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    2SC5195 2SC5195-T1 2SC5195NE68819

NEC Corp.
NEC, Corp.
Part No. 2SC5195 2SC5195-T1 2SC5195NE68819
OCR Text ...GE DRAWINGS (Unit: mm) 1.60.1 0.80.1 2 0.5 0.5 1.60.1 1.0 0.2 -0 +0.1 IC = 100 mA * Supercompact Mini Mold Package 3 ORDERING INFORMATION PART NUMBER 2SC5195 QUANTITY In-bulk products (50 pcs.) Taped products (3 Kpcs...
Description Discrete
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 微波低噪声放大器NPN硅外延晶体管

File Size 62.42K  /  10 Page

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    Panasonic
Part No. 2SC5380A
OCR Text ... Unit: mm 15.50.5 4.5 10.0 s Features q q q 3.20.1 5 26.50.5 3.00.3 High breakdown voltage, and high reliability through the use of a glass passivation layer High-speed switching Wide area of safe operation (ASO) (TC=25...
Description For horizontal deflection output

File Size 40.20K  /  3 Page

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    HITACHI[Hitachi Semiconductor]
Part No. 2SC5390
OCR Text ...BE Min 110 110 -- -- 30 -- -- 1.0 -- Typ -- -- -- -- -- -- -- 1.4 2.4 Max -- -- 10 10 100 1 1 -- 3.5 V V GHz pF Unit V V A A Test Conditions I C = 10E A, IE = 0 I C = 1mA, RBE = VCB = 100V, IE = 0 VE B = 3V, IC = 0 VCE = 10 V, IC = 10mA VC...
Description Silicon NPN Epitaxial High Frequency Amplifier

File Size 29.08K  /  6 Page

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    2SC5390

Hitachi Semiconductor
Part No. 2SC5390
OCR Text ...BE Min 110 110 -- -- 30 -- -- 1.0 -- Typ -- -- -- -- -- -- -- 1.4 2.4 Max -- -- 10 10 100 1 1 -- 3.5 V V GHz pF Unit V V A A Test Conditions I C = 10E A, IE = 0 I C = 1mA, RBE = VCB = 100V, IE = 0 VE B = 3V, IC = 0 VCE = 10 V, IC = 10mA VC...
Description Silicon NPN Transistor

File Size 35.26K  /  7 Page

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    Panasonic
Part No. 2SC5418
OCR Text ... Unit: mm 15.50.5 4.5 10.0 s Features q q q 3.20.1 5 26.50.5 3.00.3 High breakdown voltage, and high reliability through the use of a glass passivation layer High-speed switching Wide area of safe operation (ASO) (TC=25...
Description For horizontal deflection output

File Size 39.98K  /  3 Page

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    2SC5418

PANASONIC[Panasonic Semiconductor]
Part No. 2SC5418
OCR Text ... Unit: mm 15.50.5 4.5 10.0 s Features q q q 3.20.1 5 26.50.5 3.00.3 High breakdown voltage, and high reliability through the use of a glass passivation layer High-speed switching Wide area of safe operation (ASO) (TC=25...
Description For horizontal deflection output

File Size 35.41K  /  2 Page

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    NEC Corp.
NEC[NEC]
Part No. 2SC5437
OCR Text ...old thin flat package (1.4 mm x 0.8 mm x 0.59 mm: TYP.) * Contains same chip as 2SC5195 PACKAGE DIMENSIONS (in mm) 1.4 0.05 0.8 0.1 1.4 0.1 (0.9) 0.45 0.45 0.2 +0.1 -0 ABSOLUTE MAXIMUM RATINGS (TA = 25 C) PARAMETER Collecto...
Description High-Frequecy Low-Noise Amplifier NPN Transistor(高频低噪声放大器NPN晶体
NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION

File Size 61.40K  /  8 Page

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    2SC5882

Isahaya Electronics Corporation
Part No. 2SC5882
OCR Text 0 . 4 5 m ) W [ P btp v C ^ h g AZbg ^ x "\L *B ` @ V L ^ s G NP R V B* L " OEO Xoe J i{ 2 SC 5 8 2 `@O } r^XW gq gp mP: 0 .2 "\B 1 2 0 .8 0 .2 @ * ( ^ * E 0 . 4 5 m ) W [ P Ab p v C ^ h g t @Zbg ^A x 4 " B T ...
Description SILICON NPN EPITAXIAL TRANSISTOR

File Size 116.96K  /  6 Page

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    Renesas
Part No. 2SC5894
OCR Text ...VEBO IC Pc Tj Tstg Ratings 12 4.0 1.5 12 50 150 -55 to +150 Unit V V V mA mW C C Electrical Characteristics (Ta = 25C) Item Collector cutoff current Collector cutoff current Emitter cutoff current DC current transfer ratio Collector ou...
Description Transistors>Amplifiers/Bipolar

File Size 131.29K  /  14 Page

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    2SC5894

RENESAS[Renesas Electronics Corporation]
Part No. 2SC5894
OCR Text ...VEBO IC Pc Tj Tstg Ratings 12 4.0 1.5 12 50 150 -55 to +150 Unit V V V mA mW C C Electrical Characteristics (Ta = 25C) Item Collector cutoff current Collector cutoff current Emitter cutoff current DC current transfer ratio Collector ou...
Description From old datasheet system
Silicon NPN Epitaxial High Frequency Low Noise Amplifier / Oscillator

File Size 126.00K  /  13 Page

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