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				AMICC[AMIC Technology]
Part No.	A42U0616V-80 A42U0616 A42U0616S A42U0616S-50 A42U0616S-60 A42U0616S-80 A42U0616V A42U0616V-50 A42U0616V-60
OCR Text	...nary Features n Organization: 1,048,576 words X 16 bits n Part Identification - A42U0616 (1K Ref.) n Single 2.5V power supply/built-in VBB generator n Low power consumption - Operating: 120mA (-50 max) - Standby: 1mA (TTL), 0.2mA (CMOS), ...
Description	1M X 16 CMOS DYNAMIC RAM WITH EDO PAGE MODE
File Size	276.41K / 25 Page	View it Online	Download Datasheet

				Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor]
Part No.	K4S641632H-UC60 K4S641632H-UC70 K4S641632H-UC75 K4S641632H K4S640832H-UC75 K4S640432H-UC75 K4S640432H-TC K4S640832H-TL75 K4S641632H-UL75 K4S640432H-UC K4S640432H-UL75 K4S640832H-UL75 K4S641632H-UL60 K4S641632H-UL70 K4S641632H-TC75 K4S641632H-TC70 K4S641632H-TC60
OCR Text	...ee (RoHS compliant) Revision 1.3 August 2004 * Samsung Electronics reserves the right to change products or specification without noti...048,576 words by 16 bits, fabricated with SAMSUNGs high performance CMOS technology. Synchronous des...
Description	64Mb H-die SDRAM Specification 54 TSOP-II with Pb-Free (RoHS compliant) 64芯片与内存规格铅54 TSOP-II免费（符合RoHS D-Subminiature Connector; Gender:Female; No. of Contacts:50; Contact Termination:IDC; D Sub Shell Size:DB50; Body Material:Steel; Contact Plating:Gold Over Nickel RoHS Compliant: Yes 64芯片与内存规格铅54 TSOP-II免费（符合RoHS 64Mb H-die SDRAM Specification 54 TSOP-II with Pb-Free 64芯片与内存规格铅54 TSOP-II免费 DELTA CONN 14POS PLUG W/O INSERT DELTA CONN 14 POS PLUG BAIL LOCK
File Size	142.44K / 14 Page	View it Online	Download Datasheet

				Mitsubishi Electric Semiconductor Mitsubishi Electric Corporation
Part No.	M5M29FB800RV-80 M5M29FT800RV-80 M5M29FB800FP M5M29FB800RV-10 M5M29FB800RV-12 M5M29FB800VP 8MFSTD M5M29FB800FP-12 M5M29FB800VP-12 M5M29FT800FP-12 M5M29FB800VP-10 M5M29FT800FP-10 M5M29FT800VP-10 M5M29FT800RV-10 M5M29FT800RV-12 M5M29FB800FP-10 M5M29FT800VP-12 M5M29FB800VP-80 M5M29FT800FP M5M29FT800RV-80-10 M5M29FT800RV-80-12 M5M29FT800VP M5M29FT800VP-80
OCR Text	.................................. 1,048,576 word x 8 bit ............................. VCC = 3.3V0.3V Supply voltage ................................ .............................. 80/100/120ns (Max) Access time Organization Power Dissipatio...
Description	8,388,608-BIT (1048,576-WORD BY 8-BIT / 524,288-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY From old datasheet system 8 /388 /608-BIT (1048 /576-576-WORD BY 8-BIT / 524 /288-WORD BY16-BIT)CMOS 3.3V-ONLY / BLOCK ERASE FLASH MEMORY 8,388,608-BIT (1048,576-576-WORD BY 8-BIT / 524,288-WORD BY16-BIT)CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY
File Size	150.57K / 14 Page	View it Online	Download Datasheet

				SGS Thomson Microelectronics STMICROELECTRONICS[STMicroelectronics] ST Microelectronics
Part No.	M68AW127 M68AW127B M68AW127BL10MC1T M68AW127BL10MC6T M68AW127BL10N1T M68AW127BL10N6T M68AW127BL10NK1T M68AW127BL10NK6T M68AW127BL70MC1T M68AW127BL70MC6T M68AW127BL70N1T M68AW127BL70N6T M68AW127BL70NK1T M68AW127BL70NK6T M68AW127BM10MC1T M68AW127BM10MC6T M68AW127BM10N1T M68AW127BM10N6T M68AW127BM10NK1T M68AW127BM10NK6T M68AW127BM70MC1T M68AW127BM70MC6T M68AW127BM70N1T M68AW127BM70N6T M68AW127BM70NK1T M68AW127BM70NK6T M68AW127BMC M68AW127BN M68AW127BNK
OCR Text	1. Packages 128K x 8 bits SRAM with OUTPUT ENABLE EQUAL CYCLE and ACCESS TIMES: 70ns LOW STANDBY CURRENT LOW VCC DATA RETENTION: 1.5V TRI...048,576 bit) CMOS SRAM, organized as 131,072 words by 8 bits. The device features fully static opera...
Description	1Mbit 128K x8, 3.0V Asynchronous SRAM
File Size	166.93K / 20 Page	View it Online	Download Datasheet

				TOSHIBA[Toshiba Semiconductor]
Part No.	TC55VBM316AFTN TC55VBM316AFTN40 TC55VBM316AFTN55 TC55VBM316ASTN40 TC55VBM316ASTN55 TC55VBM316
OCR Text	1,048,576-WORD BY 8-BIT FULL CMOS STATIC RAM DESCRIPTION The TC55VBM316AFTN/ASTN is a 8,388,608-bit static random access memory (SRAM) organized as 524,288 words by 16 bits/1,048,576 words by 8 bits. Fabricated using Toshiba's CMOS Silicon...
Description	524,288-WORD BY 16-BIT/1,048,576-WORD BY 8-BIT FULL CMOS STATIC RAM TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
File Size	212.13K / 15 Page	View it Online	Download Datasheet

				MOSEL[Mosel Vitelic, Corp]
Part No.	V29C51001B V29C51001T V29C51001T-45J V29C51001T-45P V29C51001T-45T V29C31001T-45J V29C31001T-45P V29C31001T-45T V29C51001T-90T V29C31001B-45J V29C31001B-45P V29C31001B-45T V29C31001B-70J V29C31001B-70P V29C31001B-70T V29C31001B-90J V29C31001B-90P V29C31001B-90T V29C31001T-70J V29C31001T-70P V29C31001T-70T V29C31001T-90J V29C31001T-90P V29C31001T-90T V29C51001B-45J V29C51001B-45P V29C51001B-45T V29C51001B-70J V29C51001B-70P V29C51001B-70T V29C51001B-90J V29C51001B-90P V29C51001B-90T V29C51001T-70J V29C51001T-70P V29C51001T-70T V29C51001T-90J V29C51001T-90P
OCR Text	1 MEGABIT (131,072 x 8 BIT) 5 VOLT CMOS FLASH MEMORY Description PRELIMINARY Features s s s s s s 128Kx8-bit Organization Address Ac...048,576 Bit Memory Cell Array A0-A16 Address buffer & latches Y-Decoder CE OE WE Cont...
Description	1 MEGABIT 131,072 x 8 BIT 5 VOLT CMOS FLASH MEMORY
File Size	73.18K / 16 Page	View it Online	Download Datasheet

				Mosel Vitelic Corp MOSEL[Mosel Vitelic, Corp] Mosel Vitelic, Corp. Mosel Vitelic Corp
Part No.	V29LC51000
OCR Text	...m Cycle Time: 30s (Max) Minimum 1,000 Erase-Program Cycles Low power dissipation - Active Read Current: 20mA (Typ) - Active Program Current:...048,576 Bit Memory Cell Array V29LC51000 X-Decoder A0-A15 Address buffer & latches Y-...
Description	512 KILOBIT 65,536 x 8 BIT 5 VOLT CMOS FLASH MEMORY 512 KILOBIT 65/536 x 8 BIT 5 VOLT CMOS FLASH MEMORY
File Size	51.67K / 12 Page	View it Online	Download Datasheet

				Mosel Vitelic Corp MOSEL[Mosel Vitelic, Corp] Mosel Vitelic Corp
Part No.	V29LC51001
OCR Text	1 MEGABIT (131,072 x 8 BIT) 5 VOLT CMOS FLASH MEMORY Description PRELIMINARY Features s s s s s 128Kx8-bit Organization Address Acce...048,576 Bit Memory Cell Array V29LC51001 X-Decoder A0-A16 Address buffer & latches Y-...
Description	1 MEGABIT 131/072 x 8 BIT 5 VOLT CMOS FLASH MEMORY 1 MEGABIT 131,072 x 8 BIT 5 VOLT CMOS FLASH MEMORY
File Size	51.64K / 12 Page	View it Online	Download Datasheet

				VML[Vanguard International Semiconductor]
Part No.	VG26S18165CJ-5 VG26S18165CJ-6 VG26V18165CJ-5 VG26V18165CJ-6 VG26VS18165C VG2618165C
OCR Text	1,048,576 x 16 - Bit CMOS Dynamic RAM The device CMOS Dynamic RAM organized as 1,048,576 words x 16 bits with extended data out access mode. It is fabricated with an advanced submicron CMOS technology and designed to operate from a singl...
Description	1,048,576 x 16 - Bit CMOS EDO DRAM 1,048,576 x 16 - Bit CMOS Dynamic RAM
File Size	227.81K / 27 Page	View it Online	Download Datasheet

				VML[Vanguard International Semiconductor]
Part No.	VG3617161ET VG3617161ET-6 VG3617161ET-7 VG3617161ET-8
OCR Text	1,048,576 x 16 - Bit CMOS Synchronous Dynamic RAM The VG3617161ET is CMOS Synchronous Dynamic RAM organized as 524,288-word X 16-bit X 2-bank. It is fabricated with an advanced submicron CMOS technology and designed to operate from a sin...
Description	CMOS Synchronous Dynamic RAM
File Size	1,124.02K / 69 Page	View it Online	Download Datasheet

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