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INFINEON[Infineon Technologies AG]
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Part No. |
IPB80N04S2L-03 IPP80N04S2L-03 SP0002-19063 SP0002-20158
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OCR Text |
...ol ID Conditions T C=25 C, V GS=10 V T C=100 C, V GS=10 V2) Pulsed drain current2) Avalanche energy, single pulse2) Gate source voltage4) Po...03-02
IPB80N04S2L-03 IPP80N04S2L-03
Parameter Symbol Conditions min. Thermal characteristics2) T... |
Description |
OptiMOSPower-Transistor OptiMOS㈢ Power-Transistor OptiMOS? Power-Transistor
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File Size |
150.94K /
8 Page |
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ADPOW[Advanced Power Technology]
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Part No. |
SD1536-03
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OCR Text |
...Temperature
Value
65 65 3.5 10 292 +200 -65 to +150
Unit
V V V A W C C
THERMAL DATA
RTH(J-C) Junction-Case Thermal Resistance 0....03
ELECTRICAL SPECIFICATIONS (Tcase = 25 C) 25
STATIC
Symbol
BVCBO BVCER BVEBO ICES hFE IC = 10 ... |
Description |
RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS
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File Size |
90.15K /
3 Page |
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Part No. |
FH25-27S-0.3-SH05
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OCR Text |
...on) storage temperature range -10? to +50? (note 2) storage humidity range relative humidity 90% max. recommended fpc thickness: = 0.20.03...03 (0.05) (0.2) a 0.3 0.30.05(land) full r 0.90.03 0.40.03 0.40.03 (0.15) (0.15) b0.05 1.650.03 0.70... |
Description |
27 CONTACT(S), FEMALE, RIGHT ANGLE FFC/FPC CONNECTOR, SURFACE MOUNT
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File Size |
285.56K /
8 Page |
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Infineon
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Part No. |
SPI100N03S2-03
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OCR Text |
... f ( t c ) parameter: v gs 3 10 v 0 20 40 60 80 100 120 140 160 c 190 t c 0 10 20 30 40 50 60 70 80 90 a 110 spp100n03s2-03 i d 4 max. transient thermal impedance z thjc = f ( t p ) parameter : d = t p / t 10 -7 10 -6... |
Description |
Low Voltage MOSFETs - OptiMOS Power MOSFET, 30V, D2PAK, RDSon = 3.3mOhm, 100A, NL
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File Size |
526.80K /
8 Page |
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it Online |
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Price and Availability
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