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Dynex Semiconductor, Ltd.
DYNEX[Dynex Semiconductor]
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| Part No. |
DFS454 DFS45420 DFS45422 DFS45424 DFS45425
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| OCR Text |
... = 150oC At Tvj = 150oC di/dt = 1000a/s, Tj = 125oC IF = 750A, diRR/dt = 100A/s Tcase = 125oC, VR = 100V Parameter Conditions At 1000a peak, Tcase = 25oC At VRRM, Tcase = 150oC Typ. 2.0 150 1.3 Max. 3.1 50 200 1.64 1.54 120 Units V mA
s
... |
| Description |
Fast Recovery Diode 365 A, 2500 V, SILICON, RECTIFIER DIODE
Fast Recovery Diode 365 A, 2000 V, SILICON, RECTIFIER DIODE
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| File Size |
64.71K /
8 Page |
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Mitsubishi Electric Semicon...
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
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| Part No. |
FD1500BV-90DA
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| OCR Text |
... Tj = 125C IFM = 1500A, di/dt = 1000a/s, VR = 2250V, Tj = 125C With clamp circuit (Refer to Fig. 1 and Fig. 2) Junction to fin Limits Min. -- -- -- -- -- -- Typ. -- -- -- 8.0 2 -- Max. 150 3.5 3600 -- -- 0.11 Unit mA V C J/P -- C/W
Fig. ... |
| Description |
HIGH POWER, HIGH FREQUENCY, PRESS PACK TYPE
HIGH POWER/ HIGH FREQUENCY/ PRESS PACK TYPE
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| File Size |
26.95K /
3 Page |
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DYNEX[Dynex Semiconductor]
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| Part No. |
DSF21545SV45 DSF21545SV
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| OCR Text |
... = 150oC At Tvj = 150oC di/dt = 1000a/s, Tj = 125oC IF = 1000a, diRR/dt = 100A/s Tcase = 150oC, VR = 100V Parameter Conditions At 3000A peak, Tcase = 25oC At VRRM, Tcase = 150oC Typ. 7.0 2 Max. 2.0 150 1800 500 1.25 0.25 75 Units V mA
s
... |
| Description |
Fast Recovery Diode
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| File Size |
70.50K /
8 Page |
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Dynex Semiconductor Ltd.
Dynex Semiconductor, Ltd.
DYNEX[Dynex Semiconductor]
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| Part No. |
DSF21060SV60 DSF21060SV DSF21060SV55 DSF21060SV56 DSF21060SV57 DSF21060SV58 DSF21060SV59
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| OCR Text |
... = 125oC At Tvj = 125oC di/dt = 1000a/s, Tj = 100oC IF = 1000a, diRR/dt = 100A/s Tcase = 125oC, VR = 100V Parameter Conditions At 600A peak, Tcase = 25oC At VRRM, Tcase = 125oC Typ. 1.8 140 Max. 3.0 75 6.5 1500 460 1.625 0.66 Units V mA
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| Description |
24 Characters x 2 Lines, 5x7 Dot Matrix Character and Cursor 1690 A, 5600 V, SILICON, RECTIFIER DIODE
24 Characters x 2 Lines, 5x7 Dot Matrix Character and Cursor 1690 A, 5800 V, SILICON, RECTIFIER DIODE
Fast Recovery Diode
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| File Size |
73.33K /
9 Page |
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WESTCODE SEMICONDUCTORS LTD
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| Part No. |
WESTCODESEMICONDUCTORSLTD-R1279NS25J R1279NS24M
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| OCR Text |
... 1.0 2.0 v d =67% v drm , i tm =1000a, di/dt=60a/s, i fg =2a, t r =0.5s, t j =25c s q rr recovered charge - 1250 - c q ra recovered charge, 50% chord - 700 920 c i rm reverse recovery current - 230 - a t rr reverse recovery time - 6.0 - i t... |
| Description |
2571 A, 2400 V, SCR
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| File Size |
677.86K /
12 Page |
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| Part No. |
FN3275H-80-35 FN3275H-150-99 FN3275H-250-99
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| OCR Text |
... to 60hz rated currents: 10 to 1000a @ 50c high potential test voltage: p ?> e 2750vdc for 2 sec p ?> p 2250vdc for 2 sec protection category: ip20 (10 to 100a) ip00 (150 to 1000a) overload capability: 4x rated current at switch o... |
| Description |
520 V, 60 HZ, THREE PHASE EMI FILTER
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| File Size |
497.90K /
3 Page |
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WESTCODE SEMICONDUCTORS LTD
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| Part No. |
M1858NC160
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| OCR Text |
...ce - - 0.127 m ? - - 10 di/dt = 1000a/s, t j =25c v frm maximum forward recovery voltage - - 14 di/dt = 1000a/s v - - 20 rated v rrm , t j =25c i rrm peak reverse current - - 100 rated v rrm ma q rr recovered charge - 120 - c q ra recovered... |
| Description |
1858 A, 1600 V, SILICON, RECTIFIER DIODE
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| File Size |
348.01K /
11 Page |
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Dynex Semiconductor, Ltd.
Dynex Semiconductor Ltd.
DYNEX[Dynex Semiconductor]
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| Part No. |
DSF21035SV35 DSF21035SV DSF21035SV30 DSF21035SV32 DSF21035SV34
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| OCR Text |
... = 150oC At Tvj = 150oC di/dt = 1000a/s, Tj = 125oC IF = 1000a, diRR/dt = 100A/s Tcase = 150oC, VR = 100V Parameter Conditions At 3000A peak, Tcase = 25oC At VRRM, Tcase = 150oC Typ. 6.0 500 1.8 Max. 2.3 150 1500 1.05 0.33 75 Units V mA
... |
| Description |
Fast Recovery Diode 3000 A, 3500 V, SILICON, RECTIFIER DIODE
Fast Recovery Diode 3000 A, 3200 V, SILICON, RECTIFIER DIODE
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| File Size |
63.94K /
7 Page |
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eupec GmbH
ETC
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| Part No. |
BSM15GP120
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| OCR Text |
... I F=INenn, IF = IF = 15 A 15 A 1000a/s 600 V 600 V 1000a/s 600 V 600 V 1000a/s 600 V 600 V ERQ Qr I RM VF -
typ.
1,75 1,6 22 25 1,6 3,2 0,5 1,2
max.
2,2 V V A A As As mWs mWs
- diF/dt =
VGE = -10V, Tvj = 25C, VR = VGE = -10V,... |
| Description |
IGBT-Modules
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| File Size |
199.12K /
11 Page |
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it Online |
Download Datasheet |
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