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  13-16ghz Datasheet PDF File

For 13-16ghz Found Datasheets File :: 89    Search Time::2.406ms    
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    ENA1281

Sanyo Semicon Device
Part No. ENA1281
OCR Text ...1GHz VCE=1V, IC=10mA, f=1GHz 60 13 16 17.5 1.2 1.8 Conditions Ratings min typ max 1.0 1.0 150 GHz dB dB Unit A A Marking : GL Note) Pay attention to handling since it is liable to be affected by static electricity due to the high-frequen...
Description NPN Epitaxial Planar Silicon Transistor High Frequency Low-Noise Amplifier

File Size 269.81K  /  9 Page

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    MCH4020

Sanyo Semicon Device
Part No. MCH4020
OCR Text ...1GHz VCE=1V, IC=10mA, f=1GHz 60 13 16 17.5 1.2 1.8 Conditions Ratings min typ max 1.0 1.0 150 GHz dB dB Unit A A Marking : GT Note) Pay attention to handling since it is liable to be affected by static electricity due to the high-frequen...
Description NPN Epitaxial Planar Silicon Transistor High Frequency Low-Noise Amplifi er

File Size 268.69K  /  9 Page

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    CHR2294

United Monolithic Semiconductors
Part No. CHR2294
OCR Text ... -4 -5 -6 -7 -8 -9 -10 -11 -12 -13 -14 -15 -20 -18 -16 -14 -12 -10 -8 -6 -4 -2 0 2 4 6 IF Input power (dBm) F LO=12GHz F LO=14GHz F LO=16GHz Ref. : DSCHR22946180 - 29 jun 06 4/6 Specifications subject to change without no...
Description 25-35GHz Single Side Band Mixer Self biased

File Size 133.31K  /  6 Page

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    CHA3667A

United Monolithic Semiconductors
Part No. CHA3667A
OCR Text ... 1dB gain compression: P1dB ( 7-13 GHz) (14-20 GHz) Isol Vd Id Reverse isolation Drain bias voltage Drain bias current Min 7 7-20GHz Ampl...16GHz 26 24 22 20 18 16 14 12 10 8 6 4 2 0 -20 Pout( dBm) & Gain (dB) 290 Gain Pout 270 Id...
Description 7-20GHz Medium Power Amplifier

File Size 287.52K  /  8 Page

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    Hitachi,Ltd.
Part No. HSE11
OCR Text ... 10-11 10 -12 10 -13 0 2 8 6 4 Reverse voltage VR (V) 10 Fig.2 Reverse current Vs. Reverse voltage f = 1MHz ...16GHz .2 12GHz 8GHz 4GHz .2 .4 .6 .8 1 0 1GHz -10 -.2 -3 -.4 -2 -.6 -.8 -1 -1.5 -5 -4 ...
Description GaAs Schottky Barrier Diode for SHF Mixer(用于SHF混频器的肖特基势垒二极管)

File Size 28.17K  /  4 Page

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    MGF0951P MGF0951P11

Mitsubishi Electric Semiconductor
Part No. MGF0951P MGF0951P11
OCR Text ... lp *2 linear power gain 11 13 - db im3 *3 3rd order modulation distortion v ds =10v,i d =200ma,f=2.15ghz *1: pin=20dbm, *2 :p in =10db *3: f1=2.15ghz,f2=2.16ghz po(scl)=20dbm - -45 - dbc rth(ch-c) thermal resistance ...
Description High-power GaAs FET (small signal gain stage)

File Size 267.74K  /  6 Page

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    MCH4021

Sanyo Semicon Device
Part No. MCH4021
OCR Text ...1GHz VCE=1V, IC=10mA, f=1GHz 60 13 16 17.5 1.2 1.8 Conditions Ratings min typ max 1.0 1.0 150 GHz dB dB Unit A A Marking : GL Note) Pay attention to handling since it is liable to be affected by static electricity due to the high-frequen...
Description NPN Epitaxial Planar Silicon Transistor High Frequency Low-Noise Amplifier

File Size 268.84K  /  9 Page

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    CPH602012

Sanyo Semicon Device
Part No. CPH602012
OCR Text ... ? high gain : | s21e | 2 =13.5db typ (f=1ghz) speci
Description High-Frequency Low-Noise Amplifier

File Size 497.73K  /  6 Page

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    CPH6020

Sanyo Semicon Device
Part No. CPH6020
OCR Text ... ? high gain : | s21e | 2 =13.5db typ (f=1ghz). speci
Description NPN Epitaxial Planar Silicon Transistor High-Frequency Low-Noise Amplifi er

File Size 255.42K  /  4 Page

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For 13-16ghz Found Datasheets File :: 89    Search Time::2.406ms    
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