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  1805 Datasheet PDF File

For 1805 Found Datasheets File :: 1022    Search Time::2.547ms    
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    MRF18085AR3 MRF18085ALSR3

Motorola, Inc.
MOTOROLA[Motorola Inc]
Freescale (Motorola)
Part No. MRF18085AR3 MRF18085ALSR3
OCR Text ...s. Specified for GSM - GSM EDGE 1805 - 1880 MHz. * GSM and GSM EDGE Performance, Full Frequency Band (1805 - 1880 MHz) Power Gain - 15 dB (Typ) @ 85 Watts CW Efficiency - 52% (Typ) @ 85 Watts CW * Internally Matched, Controlled Q, for Ease ...
Description RF Power Field Effect Transistors
GSM/GSM EDGE 1.80–1.88 GHz, 85 W, 26 V Lateral N–Channel RF Power MOSFET

File Size 374.39K  /  8 Page

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    B39202B9818P810

TDK Electronics
Part No. B39202B9818P810
OCR Text ...mum insertion attenuation a max 1805.0 ... 1880.0 mhz 1.6 2.5 db amplitude ripple (p-p) da 1805.0 ... 1880.0 mhz 0.9 1.9 db input vswr 1805.0 ... 1880.0 mhz 2.1 2.5 output vswr 1805.0 ... 1880.0 mhz 2.1 2.5 attenuation a 10.0 ... 902.0...
Description SAW Components SAW Rx 2in1 filter

File Size 226.61K  /  12 Page

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    HHM1930A1

TDK Electronics
Part No. HHM1930A1
OCR Text ...rn loss at unbalanced port (db) 1805 to 1880 10 phase balance (deg.) 1805 to 1880 175 185 amplitude balance (db) 1805 to 1880 C1.0 1.0 insertion loss (db) 1805 to 1880 0.55 operating temperature storage temperature c c C40 to ...
Description Multilayer Balun

File Size 66.06K  /  6 Page

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    KTY81-152 KTY81-151 KTY81-150 KTY81-122 KTY81-121 KTY81-120 KTY81-110 KTY81-1

NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
Part No. KTY81-152 KTY81-151 KTY81-150 KTY81-122 KTY81-121 KTY81-120 KTY81-110 KTY81-1
OCR Text ...2 1209 1299 1392 1490 1591 1696 1805 1915 1970 2023 2124 2211 MAX. 505 530 582 638 698 761 828 898 972 1010 1051 1136 1225 1319 1416 1518 1623 1733 1847 1963 2020 2077 2184 2277 TEMP. ERROR (K) 3.02 2.92 2.74 2.55 2.35 2.14 1.91 1.67 1.41 1...
Description Silicon temperature sensors(纭??绱?俯搴?????)
Silicon temperature sensors(硅元素温度传感器)

File Size 92.91K  /  16 Page

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    KTY81-1SERIES KTY81-1SERIES_3 KTY81-1 KTY81-100

NXP Semiconductors
Philips
Part No. KTY81-1SERIES KTY81-1SERIES_3 KTY81-1 KTY81-100
OCR Text ...2 1209 1299 1392 1490 1591 1696 1805 1915 1970 2023 2124 2211 MAX. 505 530 582 638 698 761 828 898 972 1010 1051 1136 1225 1319 1416 1518 1623 1733 1847 1963 2020 2077 2184 2277 TEMP. ERROR (K) 3.02 2.92 2.74 2.55 2.35 2.14 1.91 1.67 1.41 1...
Description From old datasheet system
Silicon temperature sensors

File Size 77.29K  /  16 Page

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    Infineon Technologies A...
Part No. PXAC182908FV PXAC182908FV-15
OCR Text ...power rf ldmos fet 240 w, 28 v, 1805 C 1880 mhz description the pxac182908fv is a 240-watt ldmos fet with an asymmetri - cal design intended for use in multi-standard cellular power amplifer applications in the 1805 to 1880 mhz freq...
Description Thermally-Enhanced High Power RF LDMOS FET

File Size 347.25K  /  8 Page

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    Infineon Technologies A...
Part No. PXAC182002FC PXAC182002FC-15
OCR Text ...power rf ldmos fet 180 w, 28 v, 1805 C 1880 mhz description the pxac182002fc is a 180-watt ldmos fet with an asymmetri - cal design intended for use in multi-standard cellular power amplifer applications in the 1805 to 1880 mhz freq...
Description Thermally-Enhanced High Power RF LDMOS FET

File Size 350.19K  /  7 Page

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    Infineon Technologies A...
Part No. PXAC180602MD-15
OCR Text ... power rf ldmos fet 60 w, 28 v, 1805 C 1880 mhz description the pxac180602md is a 60-watt ldmos fet with an asym - metrical design intended for use in multi-standard cellular power amplifer applications in the 1805 to...
Description Thermally-Enhanced High Power RF LDMOS FET

File Size 476.19K  /  9 Page

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    B39182B9810P810

TDK Electronics
Part No. B39182B9810P810
OCR Text ...mum insertion attenuation a max 1805.0 ... 1880.0 mhz 1.4 1) 1) typical value excluding pcb losses of 0.24 db. 2.4 2) 2) 2.0 db at 25 ? c db amplitude ripple (p-p) da 1805.0 ... 1880.0 mhz 0.7 1.5 3) 3) 1.4 db at 25 ? c db inp...
Description SAW Components

File Size 163.26K  /  12 Page

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    MRF18090A MRF18090AS

Motorola, Inc
MOTOROLA[Motorola Inc]
Part No. MRF18090A MRF18090AS
OCR Text ...VDD = 26 Vdc, IDQ = 750 mA, f = 1805 - 1880 MHz) Drain Efficiency @ 90 W (1) (VDD = 26 Vdc, IDQ = 750 mA, f = 1805 - 1880 MHz) Input Return Loss (1) (VDD = 26 Vdc, Pout = 90 W CW, IDQ = 750 mA, f = 1805 - 1880 MHz) Output Mismatch Stress (V...
Description MRF18090A, MRF18090AS 1.80-1.88 GHz, 90 W, 26 V Lateral N-Channel RF Power MOSFETs
1.80 - 1.88 GHz 90 W 26 V LATERAL N-CHANNEL RF POWER MOSFETS
1.80 - 1.88 GHz, 90 W, 26 V LATERAL N-CHANNEL RF POWER MOSFETS

File Size 171.46K  /  8 Page

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