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2.987 Datasheet PDF File

For 2.987 Found Datasheets File :: 1422 Search Time::2.203ms
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				Clare Inc CLARE[Clare, Inc.]
Part No.	IAA110 IAA110P IAA110PTR
OCR Text	...ces 10ms CONTROL (N/C) 1 2 3 4 5 6 16 15 (Form A) 14 13 12 (Form A) 11 10 9 + 90% LOAD 10% + TON 10%+ TOFF 7 (N/C) 8 Swit...987 .102 (.079 .004) (.059 .004) (.157 .004) 1.753 .102 (.069 .004) .406 MAX. (.016) 7.493 ...
Description	Integrated Telecom Circuits DUAL TRANSISTOR OUTPUT SOLID STATE RELAY, 3750 V ISOLATION-MAX
File Size	398.75K / 6 Page	View it Online	Download Datasheet

				PHILIPS[Philips Semiconductors] NXP Semiconductors N.V.
Part No.	KTY85-1 KTY85-110 KTY85-120 KTY85-121 KTY85-122 KTY85-150 KTY85-151 KTY85-152
OCR Text	...mb = 125 C - - -40 MIN. MAX. 10 2 +125 UNIT mA mA C 1998 Mar 26 2 Philips Semiconductors Product specification Silicon temper...987 1061 1138 1218 1301 1387 1476 1568 1663 1761 1811 TYP. 562 617 674 735 799 867 938 975 1013 1090...
Description	Silicon temperature sensors
File Size	57.26K / 12 Page	View it Online	Download Datasheet

				CLARE[Clare, Inc.]
Part No.	PLA110 PLA110S PLA110STR
OCR Text	...uration + Control Control NC 1 2 3 6 5 4 Load Do Not Use Load PLA110 Pinout DC Only Configuration + Control Control NC 1 2 3 6 5 4 + L...987 .102 (.079 .004) (.059 .004) (.157 .004) Top Cover Tape Thickness .102 MAX. (.004) 6.7...
Description	Single Pole OptoMOS Relays
File Size	478.18K / 6 Page	View it Online	Download Datasheet

				IXYS[IXYS Corporation]
Part No.	IXFK170N10 IXFN170N10
OCR Text	...A/ms, VDD VDSS T J 150C, RG = 2 W TC = 25C D (TAB) miniBLOC, SOT-227 B (IXFN) E153432 S G V/ns 600 W C C V~ V~ D G = Gate ...987 0.004 1. RGS = 1 MW 2. Pulse width limited by TJM. 3. Chip capability 4. Current limited by e...
Description	Discrete MOSFETs: HiPerFET Power MOSFETS
File Size	144.23K / 4 Page	View it Online	Download Datasheet

				IXYS, Corp. IXYS[IXYS Corporation]
Part No.	IXFK55N50 IXFN55N50 IXFN55N50F IXFX55N50
OCR Text	... A/s, VDD VDSS, TJ 150C, RG = 2 TC = 25C IXFN 55N50F VDSS ID25 RDS(on) = = = 500 V 55 A 85 m D trr 250 ns G S ...987 0.004 Source-Drain Diode Symbol IS ISM VSD t rr QRM IRM Test Conditions VGS = 0 V Repetitive;...
Description	HiPerRF Power MOSFETs 55 A, 500 V, 0.09 ohm, N-CHANNEL, Si, POWER, MOSFET HiPerRF Power MOSFETs 55 A, 500 V, 0.085 ohm, N-CHANNEL, Si, POWER, MOSFET
File Size	105.10K / 2 Page	View it Online	Download Datasheet

				MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No.	2SK2973 SK2973
OCR Text	... OUTLINE DRAWING 4.6MAX 1.60.2 Dimensions in mm 1.50.1 FEATURES * High power gain:Gpe13dB @VDD=9.6V,f=450MHz,Pin=17dBm * High effi...987 -80.439 -94.398 -103.912 -111.111 -117.019 -121.733 -125.706 -129.494 -132.827 -136.175 -139.265...
Description	From old datasheet system RF POWER MOS FET(VHF/UHF power amplifiers)
File Size	33.43K / 3 Page	View it Online	Download Datasheet

				Hitachi,Ltd. HITACHI[Hitachi Semiconductor]
Part No.	BB102M
OCR Text	...ow noise characteristics; (NF = 2.1 dB typ. at f = 900 MHz) * Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 200V at C=2...987 0.985 0.975 0.969 0.954 0.948 0.933 0.923 0.912 0.892 0.882 0.868 0851 0.834 0.815 0.801 0.788 0...
Description	Build in Biasing Circuit MOS FET IC UHF RF Amplifier
File Size	63.38K / 11 Page	View it Online	Download Datasheet

				NEC, Corp. NEC[NEC]
Part No.	NE321000 NE321000-
OCR Text	...mbol VDS ID Pin MIN. 1 5 - TYP. 2 10 - MAX. 3 15 0 Unit V mA dBm ELECTRICAL CHARACTERISTICS (TA = +25 C) Parameter Gate to Source Leak C...987 0.981 0.970 0.962 0.952 0.941 0.927 0.912 0.898 0.882 0.868 0.855 0.843 0.827 0.807 0.796 0.793 ...
Description	TRANSISTOR \| JFET \| N-CHANNEL \| 4V V(BR)DSS \| 15MA I(DSS) \| CHIP 晶体管\|场效应\| N沟道\| 4V五（巴西）直\| 15mA的我（直）\|芯片 C to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET CHIP
File Size	46.74K / 12 Page	View it Online	Download Datasheet

				NEC, Corp. NEC Corp. NEC[NEC]
Part No.	NE3210S01 NE3210S01-T1 NE3210S01-T1B
OCR Text	...mbol VDS ID Pin MIN. 1 5 - TYP. 2 10 - MAX. 3 15 0 Unit V mA dBm The information in this document is subject to change without notice. Be...987 0.984 0.978 0.973 0.967 0.964 0.959 0.954 0.948 0.944 0.934 0.920 0.906 0.893 0.885 0.877 0.873 ...
Description	Low Noise Amplifier N-Channel HJ-FET(低噪声N沟道结型场效应管) 低噪声放大器N沟道黄建忠场效应管（低噪沟道结型场效应管 X to Ku BAND SUPER LOW NOISE AMPLIFER N-CHANNEL HJ-FET
File Size	60.47K / 16 Page	View it Online	Download Datasheet

For 2.987 Found Datasheets File :: 1422 Search Time::2.203ms
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