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  2.9ns Datasheet PDF File

For 2.9ns Found Datasheets File :: 760    Search Time::1.766ms    
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    HY57V161610FTP-XX HY57V161610FT-XX HY57V161610FT-5 HY57V161610FT-7

Hynix Semiconductor
Part No. HY57V161610FTP-XX HY57V161610FT-XX HY57V161610FT-5 HY57V161610FT-7
OCR Text .... 2006 rev. 1.0 / apr. 2006 2 11 synchronous dram memory 16mbit (1mx16bit) hy57v161610ft(p)-xx(i) series description ...9ns 3. v dd (min) of hy57v161610et-5 is 3.15v 4. hy57v161610ft(p) series: leaded, co...
Description 16M SDRAM
16Mb Synchronous DRAM

File Size 148.05K  /  13 Page

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    Shenzhen
Part No. LM2068N-2
OCR Text 2 LCD Module User Manual Shenzhen TOPWAY Technology Co., Ltd. Rev. 0.1 Descriptions Preliminary new release Release Date 200...9ns Symbol twck twckh twckl tds tdh twlph tld tsl tls tlh tr tf tsd twdl tsu th VDD=5.0V MIN. ...
Description LCD Module

File Size 183.07K  /  9 Page

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    Samsung Electronic
Part No. KBE00S003M KBE00S003M-D411
OCR Text 2 + 256mb mobile sdram*2 * samsung electronics reserves the right to change products or specification without notice. information in this d...9ns mobile sdram 9ns sdram interface, density, voltage, organization, option 3 = m-sdr, 2...
Description 1Gb NAND*2 256Mb Mobile SDRAM*2

File Size 1,809.86K  /  86 Page

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    SAMSUNG SEMICONDUCTOR CO. LTD.
Part No. KBE00S009M-D411 KBE00S009M-D4110
OCR Text 2 + 256mb mobile sdram*2 * samsung electronics reserves the right to change products or specification without notice. information in this d...9ns mobile sdram 9ns sdram interface, density, voltage, organization, option 9 = m-sdr, 2...
Description 1Gb NAND x 2 256Mb Mobile SDRAM x 2
SPECIALTY MEMORY CIRCUIT, PBGA137

File Size 1,908.72K  /  86 Page

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    LTC5564 LTC5505 LTC5507 LTC5508 LTC5509 LTC55641 LTC5581 LTC5582 LTC5583 LTC5587 LT5570

Linear Technology
Part No. LTC5564 LTC5505 LTC5507 LTC5508 LTC5509 LTC55641 LTC5581 LTC5582 LTC5583 LTC5587 LT5570
OCR Text ... detector v out vs input power 2.7ghz rfin power (dbm) ?24 0 v out output voltage (mv) 800 600 1400 1800 3400 3200 2600 ?16 ?12 ?4 0 3000 2200 400 200 1200 1000 1600 2400 2800 2000 ?20 ?8 4 8 12 16 5564 ta01b v cc = 5v t a = 25c gain8 g...
Description UltraFast?/a> 7ns Response Time 15GHz RF Power Detector with Comparator
UltraFast 7ns Response Time 15GHz RF Power Detector with Comparator

File Size 217.16K  /  14 Page

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    Micron Technology, Inc.
Part No. MT28S4M16LC
OCR Text ... programmable burst lengths: 1, 2, 4, 8, or full page (read) ? lvttl-compatible inputs and outputs ? single +3.3v 0.3v power supply C additi...9ns C 3ns 2ns -12 83 mhz C 9ns 3ns 2ns -12 66 mhz 10ns C 3ns 2ns *cl = cas (read) latency the mt28s4...
Description SYNCFLASH MEMORY

File Size 973.26K  /  48 Page

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    Mitsubishi Electric Corporation
Mitsubishi Electric, Corp.
Part No. M30620MC-A18FP M30620MC-311FP M30620MC-345GP M30620MCM-207GP M30620MC-335GP M30620M8-359FP M30620M8-A69GP M30620MC-388FP
OCR Text ... of address space, low voltage (2.2v to 3.6v), they are capable of executing instructions at high speed. they also feature a built-in multip...9ns (f(x in )=7mh z , v cc =2.2v to 3.6v with software one-wait) ? supply voltage .....................
Description SINGLE-CHIP 16-BIT CMOS MICROCOMPUTER 单片16位CMOS微机
RF CONNECTOR; SMA MALE FIELD REPLACEABLE, ACCEPTS PIN SIZE: .012; EMI / RFI GASKET: YES; .500" SQ. FLANGLE 单片16位CMOS微机

File Size 415.96K  /  33 Page

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    Integrated Silicon Solution Inc
Part No. IS42S16100
OCR Text ...programmable burst length ? (1, 2, 4, 8, full page)  programmable burst sequence: sequential/interleave  auto refresh, self refresh  4096...9ns t chi clk high level width 2 ? 2.5 ? 3.5 ? ns t cl clk low level width 2 ? 2.5 ? 3.5 ? ns t oh 3...
Description 512K Words x 16Bits x 2 Banks Synchronous Dynamic RAM

File Size 656.76K  /  78 Page

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    SAMSUNG SEMICONDUCTOR CO. LTD.
Part No. KBE00F005A-D411
OCR Text 2 + 256mb mobile sdram*2 * samsung electronics reserves the right to chang e products or specification without notice. information in this ...9ns mobile sdram 9ns sdram interface, density, voltage, organization, option 5 = m-sdr, 25...
Description 512Mb NAND*2 256Mb Mobile SDRAM*2

File Size 1,363.49K  /  87 Page

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    SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
Part No. KBE00G003M-D411 KBE00G003M-D4110
OCR Text 2 + mobile sdram 256mb*2 * samsung electronics reserves the right to chang e products or specification without notice. information in this ...9ns mobile sdram 9ns sdram interface, density, voltage, organization, option 3 = m-sdr, 25...
Description NAND 512Mb*2 Mobile SDRAM 256Mb*2 NAND闪存12Mb * 2移动SDRAM 256Mb 2
SPECIALTY MEMORY CIRCUIT, PBGA107

File Size 1,254.33K  /  89 Page

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