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Shenzhen
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Part No. |
LM2068N-2
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OCR Text |
2
LCD Module User Manual
Shenzhen TOPWAY Technology Co., Ltd.
Rev.
0.1
Descriptions
Preliminary new release
Release Date
200...9ns
Symbol twck twckh twckl tds tdh twlph tld tsl tls tlh tr tf tsd twdl tsu th
VDD=5.0V MIN. ... |
Description |
LCD Module
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File Size |
183.07K /
9 Page |
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it Online |
Download Datasheet
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Samsung Electronic
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Part No. |
KBE00S003M KBE00S003M-D411
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OCR Text |
2 + 256mb mobile sdram*2 * samsung electronics reserves the right to change products or specification without notice. information in this d...9ns mobile sdram 9ns sdram interface, density, voltage, organization, option 3 = m-sdr, 2... |
Description |
1Gb NAND*2 256Mb Mobile SDRAM*2
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File Size |
1,809.86K /
86 Page |
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it Online |
Download Datasheet
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SAMSUNG SEMICONDUCTOR CO. LTD.
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Part No. |
KBE00S009M-D411 KBE00S009M-D4110
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OCR Text |
2 + 256mb mobile sdram*2 * samsung electronics reserves the right to change products or specification without notice. information in this d...9ns mobile sdram 9ns sdram interface, density, voltage, organization, option 9 = m-sdr, 2... |
Description |
1Gb NAND x 2 256Mb Mobile SDRAM x 2 SPECIALTY MEMORY CIRCUIT, PBGA137
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File Size |
1,908.72K /
86 Page |
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it Online |
Download Datasheet
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Micron Technology, Inc.
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Part No. |
MT28S4M16LC
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OCR Text |
... programmable burst lengths: 1, 2, 4, 8, or full page (read) ? lvttl-compatible inputs and outputs ? single +3.3v 0.3v power supply C additi...9ns C 3ns 2ns -12 83 mhz C 9ns 3ns 2ns -12 66 mhz 10ns C 3ns 2ns *cl = cas (read) latency the mt28s4... |
Description |
SYNCFLASH MEMORY
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File Size |
973.26K /
48 Page |
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Integrated Silicon Solution Inc
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Part No. |
IS42S16100
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OCR Text |
...programmable burst length ? (1, 2, 4, 8, full page) programmable burst sequence: sequential/interleave auto refresh, self refresh 4096...9ns t chi clk high level width 2 ? 2.5 ? 3.5 ? ns t cl clk low level width 2 ? 2.5 ? 3.5 ? ns t oh 3... |
Description |
512K Words x 16Bits x 2 Banks Synchronous Dynamic RAM
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File Size |
656.76K /
78 Page |
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it Online |
Download Datasheet
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SAMSUNG SEMICONDUCTOR CO. LTD.
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Part No. |
KBE00F005A-D411
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OCR Text |
2 + 256mb mobile sdram*2 * samsung electronics reserves the right to chang e products or specification without notice. information in this ...9ns mobile sdram 9ns sdram interface, density, voltage, organization, option 5 = m-sdr, 25... |
Description |
512Mb NAND*2 256Mb Mobile SDRAM*2
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File Size |
1,363.49K /
87 Page |
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it Online |
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SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
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Part No. |
KBE00G003M-D411 KBE00G003M-D4110
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OCR Text |
2 + mobile sdram 256mb*2 * samsung electronics reserves the right to chang e products or specification without notice. information in this ...9ns mobile sdram 9ns sdram interface, density, voltage, organization, option 3 = m-sdr, 25... |
Description |
NAND 512Mb*2 Mobile SDRAM 256Mb*2 NAND闪存12Mb * 2移动SDRAM 256Mb 2 SPECIALTY MEMORY CIRCUIT, PBGA107
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File Size |
1,254.33K /
89 Page |
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it Online |
Download Datasheet
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