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IRF[International Rectifier]
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| Part No. |
IRHMS597260 IRHMS593260
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| OCR Text |
254aa)
Product Summary
Part Number Radiation Level IRHMS597260 100K Rads (Si) IRHMS593260 300K Rads (Si) RDS(on) 0.103 0.103 ID -32A -32A
IRHMS597260 200V, P-CHANNEL
4#
TECHNOLOGY
c
Low-Ohmic TO-254aa
International Rectif... |
| Description |
-200V 100kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a TO-254aa package
-200V 300kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a TO-254aa package
RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-254aa)
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| File Size |
202.16K /
8 Page |
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IRF[International Rectifier]
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| Part No. |
IRHMS597Z60 IRHMS593Z60
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| OCR Text |
254aa)
Product Summary
Part Number Radiation Level IRHMS597Z60 100K Rads (Si) IRHMS593Z60 300K Rads (Si) RDS(on) 0.014 0.014 ID -45A* -45A*
IRHMS597Z60 30V, P-CHANNEL
5
TECHNOLOGY
Low-Ohmic TO-254aa
International Rectif... |
| Description |
RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-254aa)
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| File Size |
175.97K /
8 Page |
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it Online |
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IRF[International Rectifier]
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| Part No. |
IRHMJ8250 IRHMJ3250 IRHMJ4250 IRHMJ7250
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| OCR Text |
254aa Tabless)
TM
IRHMJ7250 200V, N-CHANNEL
(R)
TECHNOLOGY
Product Summary
Part Number Radiation Level IRHMJ7250 100K Rads (Si) IRHMJ3250 300K Rads (Si) IRHMJ4250 IRHMJ8250 600K Rads (Si) 1000K Rads (Si) RDS(on) 0.10 0.10 0.10 0... |
| Description |
RADIATION HARDENED POWER MOSFET SURFACE MOUNT (TO-254aa Tabless)
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| File Size |
327.23K /
12 Page |
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it Online |
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IRF[International Rectifier]
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| Part No. |
IRHM8Z60 IRHM3Z60 IRHM4Z60 IRHM7Z60
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| OCR Text |
254aa)
Product Summary
Part Number Radiation Level IRHM7Z60 100K Rads (Si) IRHM3Z60 300K Rads (Si) IRHM4Z60 600K Rads (Si) IRHM8Z60 1000K Rads (Si) RDS(on) 0.014 0.014 0.014 0.014 ID 35*A 35*A 35*A 35*A
IRHM7Z60 30V, N-CHANNEL
RAD-Har... |
| Description |
30V 1000kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-254aa package
30V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-254aa package
RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-254aa)
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| File Size |
119.58K /
8 Page |
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it Online |
Download Datasheet |
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International Rectifier, Corp.
IRF[International Rectifier]
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| Part No. |
IRHM8260 IRHM3260 IRHM4260 IRHM7260
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| OCR Text |
254aa)
Product Summary
Part Number IRHM7260 IRHM3260 IRHM4260 IRHM8260 Radiation Level R DS(on) 100K Rads (Si) 0.070 300K Rads (Si) 0.070 600K Rads (Si) 0.070 1000K Rads (Si) 0.070 ID ID 35*A 35*A 35*A 35*A
REF: MIL-PRF-19500/663 (R) R... |
| Description |
RADIATION HARDENED POWER MOSFET THRU-HOLE(T0-254aa) 抗辐射功率MOSFET的通孔T0 254aa
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| File Size |
263.31K /
8 Page |
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it Online |
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IRF[International Rectifier]
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| Part No. |
IRFM440 JANTX2N7222 JANTXV2N7222 IRFM440-15
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| OCR Text |
254aa)
Product Summary
Part Number
IRFM440
IRFM440 JANTX2N7222 JANTXV2N7222 REF:MIL-PRF-19500/596 500V, N-CHANNEL
HEXFET MOSFET TECHNOLOGY
(R)
RDS(on)
0.85
ID
8.0A
HEXFET(R) MOSFET technology is the key to International ... |
| Description |
Simple Drive Requirements
From old datasheet system
POWER MOSFET THRU-HOLE (TO-254aa)
500V Single N-Channel Hi-Rel MOSFET in a TO-254aa package
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| File Size |
170.93K /
7 Page |
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it Online |
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IRF[International Rectifier]
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| Part No. |
IRHM7C50SE IRHM2C50SE
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| OCR Text |
...se Outline and Dimensions -- TO-254aa
3 2 1
Conforms to JEDEC Outline TO-254aa
Legend: 1 Drain 2 Source 3 Gate Notes: 1. Dimensioning and tolerancing per ANSI Y14.5M-1982 2. All dimensions are shown in millimeters (inches). 3. Opti... |
| Description |
TRANSISTOR N-CHANNEL(BVdss=600V, Rds(on)=0.60ohm, Id=10.4A)
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| File Size |
101.94K /
4 Page |
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it Online |
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IRF[International Rectifier]
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| Part No. |
IRFM460
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| OCR Text |
254aa)
Product Summary
Part Number
IRFM460
IRFM460 500V, N-CHANNEL
HEXFET MOSFET TECHNOLOGY
(R)
RDS(on)
0.27
ID
19A
HEXFET(R) MOSFET technology is the key to International Rectifier's advanced line of power MOSFET transi... |
| Description |
POWER MOSFET THRU-HOLE (TO-254aa)
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| File Size |
203.24K /
7 Page |
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it Online |
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IRF[International Rectifier]
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| Part No. |
IRGMC30U
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| OCR Text |
...capability of the device.
TO-254aa
Absolute Maximum Ratings
Parameter
VCES IC @ TC = 25C IC @ TC = 100C ICM ILM VGE PD @ TC = 25C PD @ T C = 100C TJ TSTG Collector-to-Emitter Breakdown Voltage Continuous Collector Current Continuous... |
| Description |
600V DISCRETE Hi-Rel IGBT in a TO-254aa package
INSULATED GATE BIPOLAR TRANSISTOR
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| File Size |
543.07K /
8 Page |
View
it Online |
Download Datasheet |
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Price and Availability
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