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Sanyo Electric Co., Ltd. SANYO[Sanyo Semicon Device]
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Part No. |
2SJ503 2SJ503TP-FA
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OCR Text |
...VDS=-10V, ID=-1mA VDS=-10V, ID=-4A ID=-4A, VGS=-10V ID=-2A, VGS=-4V VDS=-10V, f=1MHz VDS=-10V, f=1MHz VDS=-10V, f=1MHz See specified Test Circuit See specified Test Circuit See specified Test Circuit See specified Test Circuit VDS=-10V, VGS... |
Description |
TRANSISTOR | MOSFET | P-CHANNEL | 30V V(BR)DSS | 4A I(D) | TO-251VAR 晶体管| MOSFET的| P通道| 30V的五(巴西)直| 4A条(丁)|51VAR Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset 晶体管| MOSFET的| P通道| 30V的五(巴西)直| 4A条(丁)|52VAR P-Channel Silicon MOSFET DC/DC Converter Applications
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File Size |
86.59K /
4 Page |
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it Online |
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FAIRCHILD SEMICONDUCTOR CORP
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Part No. |
KSC5402DTTU
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OCR Text |
...c current gain v ce =1v, i c =0.4a t c =25 c1429 t c =125 c8 17 v ce =1v, i c =1a t c =25 c6 9 t c =125 c4 6 v ce (sat) collector-emitter saturation voltage i c =0.4, i b =0.04a t c =25 c0.250.6 t c =125 c0.41.0 i c =1a, i b =0.2a t c... |
Description |
NPN Silicon Transistor Planar Silicon Transistor; Package: TO-220; No of Pins: 3; Container: Rail
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File Size |
181.73K /
12 Page |
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it Online |
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International Rectifier
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Part No. |
IRFS59N10DPBF IRFB59N10DPBF IRFB59N10DPBF-15
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OCR Text |
...?? ??? s v ds = 50v, i d = 35.4a q g total gate charge ??? 76 114 i d = 35.4a q gs gate-to-source charge ??? 24 36 nc v ds = 80v q gd gate-to-drain ("miller") charge ??? 36 54 v gs = 10v, t d(on) turn-on delay time ?... |
Description |
59 A, 100 V, 0.025 ohm, N-CHANNEL, Si, POWER, MOSFET High frequency DC-DC converters
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File Size |
227.93K /
12 Page |
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it Online |
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Price and Availability
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