| |
|
 |
RENESAS[Renesas Electronics Corporation]
Renesas Electronics Corporation.
Renesas Electronics, Corp.
|
| Part No. |
RJK1525DPS-00-T2 RJK1525DPS
|
| OCR Text |
... 8.3 0.88 95 0.3 Max -- 1 0.1 4.5 -- 0.110 -- -- -- -- -- -- -- -- -- -- 1.40 -- -- Unit V A A V S pF pF pF ns ns ns ns nC nC nC V ns C Tes...00 Feb 08, 2007 page 2 of 6
RJK1525DPS
Main Characteristics
Power vs. Temperature Derating
4... |
| Description |
17 A, 150 V, 0.11 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB TO-220CFM, 3 PIN
Silicon N Channel MOS FET High Speed Power Switching
1 A low VF MEGA Schottky barrier rectifier, SOD128 (FlatPower), Reel Pack, SMD 通道场效应晶体管高速电源开
1 A low VF MEGA Schottky barrier rectifier, SOD123W (SOD2 FlatPower), Reel Pack, SMD 通道场效应晶体管高速电源开
|
| File Size |
102.00K /
7 Page |
 View
it Online |
Download Datasheet
|
| |
|
|
Renesas Electronics Corporation
|
| Part No. |
RJK1536DPE-00-J3 RJK1536DPE-10
|
| OCR Text |
... forward voltage v df ? 0.9 1.5 v i f = 25 a, v gs = 0 body-drain diode reverse recovery time t rr ? 130 ? ns i f = 50 a, v gs = 0...00 page 3 of 6 jun 30, 2010 main characteristics 150 125 100 70 50 25 0 50 100 150 200 50 40... |
| Description |
50 A, 150 V, 0.03 ohm, N-CHANNEL, Si, POWER, MOSFET SC-83, LDPAK(S)-(1), 3 PIN
N-Channel Power MOSFET High-Speed Switching Use
|
| File Size |
76.42K /
7 Page |
View
it Online |
Download Datasheet |
| |
|
|
RENESAS[Renesas Electronics Corporation]
|
| Part No. |
RJK5012DPP-00-T2 RJK5012DPP
|
| OCR Text |
...de reverse recovery time Notes: 5. Pulse test Symbol V(BR)DSS IDSS IGSS VGS(off) RDS(on) Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VDF ...00 May 10, 2007 Page 2 of 6
RJK5012DPP
Main Characteristics
Power vs. Temperature Derating
8... |
| Description |
12 A, 500 V, 0.62 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
Silicon N Channel MOS FET High Speed Power Switching
|
| File Size |
108.44K /
7 Page |
View
it Online |
Download Datasheet |
|
Price and Availability
|
