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For 5.6us Found Datasheets File :: 164    Search Time::1.5ms    
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    Data Delay Devices
Part No. 3D3608 3D3612
OCR Text ...ypical Temperature stability: 1.5% max (-40C to 85C) Vdd stability: 1.0% max (3.0V to 3.6V) TRIG RES P0 P2 P4 P6 NC GND 1 2 3 4 5 6 7 8 16 ...6us 510us 5.2us 1.28ms 13us 2.55ms 26us 5.10ms 52us 12.8ms 128us Maximum P.W. (12-Bit) 1.03us ...
Description (3D3608 / 3D3612) 8-BIT & 12-BIT PROGRAMMABLE PULSE GENERATORS

File Size 201.13K  /  7 Page

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    K4S161622D-TC/L10 K4S161622D-TC/L55 K4S161622D-TC/L60 K4S161622D-TC/L70 K4S161622D-TC/L80

Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
Part No. K4S161622D-TC/L10 K4S161622D-TC/L55 K4S161622D-TC/L60 K4S161622D-TC/L70 K4S161622D-TC/L80
OCR Text ... A10/AP A0 A1 A2 A3 VDD 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34...6us or a burst of 2048 auto refresh cycles once in 32ms. PRECHARGE The precharge operation is pe...
Description 512K x 16Bit x 2 Banks Synchronous DRAM 12k × 16 × 2银行同步DRAM

File Size 1,088.41K  /  41 Page

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Part No. K4S161622D-TC55
OCR Text 5 sep. '00 1m x 16 sdram revision 1.5 september 2000 512k x 16bit x 2 banks synchronous dram lvttl samsung electronics reserves the right to...6us refresh duty cycle (2k/32ms) general description features functional block diagram 512k x 1...
Description 1M X 16 SYNCHRONOUS DRAM, 5 ns, PDSO50

File Size 1,135.05K  /  43 Page

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    K4S643232C-TC/L80 K4S643232C-TC/L10 K4S643232C-TC/L55 K4S643232C-TC/L60 K4S643232C-TC/L70 K4S643232C-TC10 K4S643232C-TC7

Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
Part No. K4S643232C-TC/L80 K4S643232C-TC/L10 K4S643232C-TC/L55 K4S643232C-TC/L60 K4S643232C-TC/L70 K4S643232C-TC10 K4S643232C-TC70 K4S643232C-TC55 K4S643232C-TC80 K4S643232C-TC60 K4S643232C-TL60 K4S643232C-TL70 V62C5181024LL-70P K4S643232C-TL10
OCR Text ...1 DQ22 VDDQ DQ23 VDD 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42...6us or a burst of 4096 auto refresh cycles once in 64ms. PRECHARGE The precharge operation is pe...
Description ECONOLINE: RY & RX - Controllable Output- 1kVDC Isolation- No Heatsink Required- UL94V-0 Package Material- Toroidal Magnetics- No External Components- Fully Encapsulated- Efficiency to 70%
Dual Low-Noise Precision Rail-To-Rail Operational Amplifier 14-SOIC 200万32内存12k × 32 × 4银行同步DRAM LVTTL
Low Noise Precision Advanced LinCMOS(TM) Single Operational Amplifier 8-CDIP -55 to 125 200万32内存12k × 32 × 4银行同步DRAM LVTTL
ECONOLINE: RY & RX - Controllable Output- 1kVDC Isolation- No Heatsink Required- UL94V-0 Package Material- Toroidal Magnetics- No External Components- Fully Encapsulated- Efficiency to 70%
Replaced by TLC2201A : Advanced LinCMOS(TM) Low-Noise Precision Operational Amplifier 8-PDIP -40 to 85
Replaced by TLC2201A : Advanced LinCMOS(TM) Low-Noise Precision Operational Amplifier 8-SOIC -40 to 85
Dual Low-Noise Precision Rail-To-Rail Operational Amplifier 14-SOIC
Low Noise Precision Advanced LinCMOS(TM) Single Operational Amplifier 20-LCCC -55 to 125
2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL

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    Data Delay Devices
Part No. 3D7608
OCR Text ...ypical Temperature stability: 1.5% max (-40C to 85C) Vdd stability: 0.5% max (4.75V to 5.25V) TRIG RES P0 P2 P4 P6 NC GND 1 2 3 4 5 6 7 8 1...6us 510us 5.2us 1.28ms 13us 2.55ms 26us 5.10ms 52us 12.8ms 128us Maximum P.W. (12-Bit) 1.03us ...
Description (3D7608 / 3D7612) 8-BIT & 12-BIT PROGRAMMABLE PULSE GENERATORS

File Size 201.22K  /  7 Page

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    K4S161622D-TI/E10 K4S161622D-TI/E50 K4S161622D-TI/E55 K4S161622D-TI/E60 K4S161622D-TI/E70 K4S161622D-TI/E80 DSK4S161622D

Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
http://
Part No. K4S161622D-TI/E10 K4S161622D-TI/E50 K4S161622D-TI/E55 K4S161622D-TI/E60 K4S161622D-TI/E70 K4S161622D-TI/E80 DSK4S161622D
OCR Text ... A10/AP A0 A1 A2 A3 VDD 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34...6us or a burst of 2048 auto refresh cycles once in 32ms. PRECHARGE The precharge operation is pe...
Description 1M x 16 SDRAM 100万16内存

File Size 685.66K  /  43 Page

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    MC33889DDW/R2 MCZ33889DEG/R2 MCZ33889BEG/R2 MC33889BDW/R2

Freescale Semiconductor, Inc
Part No. MC33889DDW/R2 MCZ33889DEG/R2 MCZ33889BEG/R2 MC33889BDW/R2
OCR Text ...C having fully protected, fixed 5.0 V low drop-out regulator, with current limit, over-temperature pre-warning and reset. An output drive wi...6us 8 16 30 25us loop time Tx to Rx, with bus failure and +-1.5V gnd shift, tLOOPRD/DR-F+GS 5 nod...
Description System Basis Chip with Low Speed Fault Tolerant CAN Interface

File Size 538.63K  /  60 Page

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    K4S643232E-TL45 K4S643232E-TL55 K4S643232E-TL70 K4S643232E-TC70 K4S643232E K4S643232E-TC45 K4S643232E-TC50 K4S643232E-TC

Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
Part No. K4S643232E-TL45 K4S643232E-TL55 K4S643232E-TL70 K4S643232E-TC70 K4S643232E K4S643232E-TC45 K4S643232E-TC50 K4S643232E-TC55 K4S643232E-TC60 K4S643232E-TL50 K4S643232E-TL60 K4S643232E-TC/L/E/N/I/P
OCR Text ...tober 20, 2000) * Removed Note 5 in page 9. tRDL is set to 2CLK in any case regardless of using AP or frequency Revision 0.4 (August 24,...6us refresh duty cycle CMOS SDRAM GENERAL DESCRIPTION The K4S643232E is 67,108,864 bits synchro...
Description 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL 200万32内存512k × 32 × 4银行同步DRAM LVTTL
2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL 200万32内存12k × 32 × 4银行同步DRAM LVTTL
512K x 32Bit x 4 Banks Synchronous DRAM Data Sheet

File Size 100.95K  /  12 Page

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    ACE517 ACE517GMH ACE517OMH

ACE Technology Co., LTD.
Part No. ACE517 ACE517GMH ACE517OMH
OCR Text ...ogy Packaging Type SOT-23-6 6 5 4 WLED Linear Driver for Li-lon Battery Application MSOP-8 876 5 1 2 3 1 23 4 ...6us. For example, when a dimming signal of 20KHz is applied, the minimum range of dimming is about 1...
Description WLED Linear Driver for Li-lon Battery Application

File Size 205.41K  /  8 Page

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    Excel Semiconductor
Part No. EX29DL320
OCR Text ...A7 A6 A5 A4 A3 A2 A1 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 48-Pin Standard TSOP ES29DL320 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 A16 BYTE# Vss DQ15/A-1 DQ7 DQ14 DQ6 DQ...
Description Simultaneous Operation Flash Memory

File Size 864.65K  /  59 Page

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