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6a 400v Datasheet PDF File

For 6a 400v Found Datasheets File :: 1135 Search Time::2.406ms
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				International Rectifier, Corp. IRF[International Rectifier]
Part No.	IRG4BC20KDS IRG4BC20KD-S IRG4BC20KD-STRL IRG4BC20KD-STRR
OCR Text	...A I IR R M - (A ) I F = 1 6a 10 40 IF = 8 .0 A I F = 4.0 A I F = 4 .0 A 20 0 100 d i f /d t - (A / s) 1000 1 100 1000 di f /dt - (A /s) Fig. 14 - Typical Reverse Recovery vs. dif/dt 500 Fig. 15 - Ty...
Description	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=2.27V, @Vge=15V, Ic=9.0A) 绝缘栅双极型晶体管，超快软恢复二极管VCES和\u003d 600V电压的Vce（on）典\u003d 2.27V，@和VGE \u003d 15V的，集成电路\u003d 9.0,9.0 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V Vce(on)typ.=2.27V @Vge=15V Ic=9.0A) 600V UltraFast 8-25 kHz Copack IGBT in a D2-Pak package
File Size	220.90K / 10 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRG4BC20KD IRG4BC20KDPBF
OCR Text	...A I IR R M - (A ) I F = 1 6a 10 40 IF = 8 .0 A I F = 4.0 A I F = 4 .0 A 20 0 100 d i f /d t - (A / s) 1000 1 100 1000 di f /dt - (A /s) Fig. 14 - Typical Reverse Recovery vs. dif/dt 500 Fig. 15 - Ty...
Description	600V UltraFast 8-25 kHz Copack IGBT in a TO-220AB package INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=2.27V, @Vge=15V, Ic=9.0A) INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V Vce(on)typ.=2.27V @Vge=15V Ic=9.0A)
File Size	197.00K / 10 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRG4BC20SD
OCR Text	...A I IR R M - (A ) I F = 1 6a 10 40 IF = 8 .0 A I F = 4.0 A I F = 4 .0 A 20 0 100 d i f /d t - (A / s) 1000 1 100 1000 di f /dt - (A /s) Fig. 14 - Typical Reverse Recovery vs. dif/dt 500 Fig. 15 - Ty...
Description	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.4V, @Vge=15V, Ic=10A)
File Size	281.32K / 10 Page	View it Online	Download Datasheet

				MCC[Micro Commercial Components]
Part No.	MUR660CT MUR605CT MUR610CT MUR640CT MUR620CT
OCR Text	... 640CT- 660CT IF(AV) IFSM 6a 75A TC = 130C 8.3ms, half sine L G N V D J R VF IFM = 3 A per .975V element; 1.25 V TA = 25C* 5.0uA 50uA TJ = 25C TJ = 100C IF=8.0A, Irr=0.25A 35ns 60ns 75ns A B C D F G H J K L Q R ...
Description	6.0A, 50V ultra fast recovery rectifier 6 Amp Super Fast Glass Passivated Rectifier 50 to 600 Volts 6.0A, 100V ultra fast recovery rectifier
File Size	90.68K / 2 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	HFA80NC40C
OCR Text	...Qrr (typ.) = 200nC IRRM(typ.) = 6a trr(typ.) = 30ns di(rec)M/dt (typ.) = 190A/s Description HEXFRED diodes are optimized to reduce losses and EMI/RFI in high frequency power conditioning systems. An extensive characterization of the rec...
Description	Ultrafast, Soft Recovery Diode
File Size	188.94K / 5 Page	View it Online	Download Datasheet

				STMicroelectronics
Part No.	STP7NC40
OCR Text	6a TO-220 PowerMESHTMII MOSFET TYPE STP7NC40 s s s s VDSS 400 V RDS(on) <1 ID 6a TYPICAL RDS(on) = 0.75 EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED LOW GATE CHARGE 3 1 2 DESCRIPTION The PowerMESHTMII is the evolutio...
Description	N-CHANNEL 400v - 0.75ohm - 6a TO-220 PowerMESH?II MOSFET N-CHANNEL 400v - 0.75ohm - 6a TO-220 PowerMESH⑩II MOSFET
File Size	243.82K / 8 Page	View it Online	Download Datasheet

				Infineon Technologies AG
Part No.	SPD08N50C3
OCR Text	...ve tAR limited by Tjmax1) ID=7.6a, VDD=50V Avalanche current, repetitive tAR limited by Tjmax Gate source voltage A V W C Gate so...400v pF VDD=400v, VGS=0/10V, ID=7.6a, RG =12 - ns Gate Charge Characteristics Gate to...
Description	for lowest Conduction Losses & fastest Switching Cool MOS⑩ Power Transistor Cool MOS Power Transistor
File Size	253.38K / 11 Page	View it Online	Download Datasheet

				INFINEON[Infineon Technologies AG]
Part No.	SPP06N80C3 SPA06N80C3
OCR Text	...tive tAR limited by Tjmax2) ID=6a, VDD =50V Avalanche current, repetitive tAR limited by Tjmax Gate source voltage Gate source voltage A...400v, VGS=0/10V, ID=6a, RG =15, T j=125C - ns - 3.3 14 27 6 35 - nC V(plateau) ...
Description	for lowest Conduction Losses & fastest SwitchingPlease note: Infineon has changed the CoolMOS 800V C2 marking to C3. 800V C2 ... Cool MOS Power Transistor Cool MOS⑩ Power Transistor
File Size	251.05K / 12 Page	View it Online	Download Datasheet

				FAIRCHILD SEMICONDUCTOR CORP
Part No.	SSP6N80A SSP6N80AJ69Z
OCR Text	...-diode in the MOSFET TJ=25 C,IS=6a,VGS=0V TJ=25 C,IF=7A diF/dt=100A/s 4 O Notes ; 1 O Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature 2 L=25mH, I =6a, V =50V, R =27, Starting T =25 C O AS DD G J 3 _ _ _ O ISD ...
Description	6 A, 800 V, 2 ohm, N-CHANNEL, Si, POWER, MOSFET Advanced Power MOSFET
File Size	255.63K / 7 Page	View it Online	Download Datasheet

				Powerex, Inc. Powerex Power Semiconductors
Part No.	CM15MD1-24H
OCR Text	... 100 Coes 4 2 IC = 6a Cres 0 0 4 8 12 16 20 GATE-EMITTER VOLTAGE, VGE, (VOLTS) 100 1.0 1.5 2.0 2.5 3.0 ...400v VCC = 600V 102 td(on) Irr 12 102 t rr 100 8 101 tr VCC = 600V VG...
Description	CI Module Three Phase Converter Three Phase Inverter 15 Amperes/1200 Volts 15 A, 1200 V, N-CHANNEL IGBT CI Module Three Phase Converter Three Phase Inverter 15 Amperes/1200 Volts
File Size	63.12K / 4 Page	View it Online	Download Datasheet

For 6a 400v Found Datasheets File :: 1135 Search Time::2.406ms
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | <9> | 10 | 11 | 12 | 13 | 14 | 15 |