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  8k refresh cycles every 64 ms Datasheet PDF File

For 8k refresh cycles every 64 ms Found Datasheets File :: 150+       Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | <9> | 10 | 11 | 12 | 13 | 14 | 15 |   

    Integrated Silicon Solu...
Part No. IS42SM32100D IS42VM32100D
Description    Auto refresh and self refresh

File Size 536.91K  /  33 Page

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    Samsung Electronic
Part No. KM416C1004CJ-5 KM416C1004CJ-6 KM416C1004CJL-6 KM416C1204CJ-50 KM416C1204CJ-60 KM416C1204CJL-45
Description 1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=5.0V, refresh period=64ms
1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=5.0V, refresh period=64ms
1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=5.0V, self-refresh
1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=5.0V, refresh period=16ms
1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=5.0V, refresh period=16ms
1M x 16Bit CMOS dynamic RAM with extended data out, 45ns, VCC=5.0V, self-refresh

File Size 803.02K  /  35 Page

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    HYB3117805BSJ-50 HYB3117805BSJ-60 HYB5117805BSJ-60 HYB5117805BSJ-50 HYB5117805-60 HYB5117805-50 HYB3117805-60 HYB3117805

Infineon
SIEMENS[Siemens Semiconductor Group]
Part No. HYB3117805BSJ-50 HYB3117805BSJ-60 HYB5117805BSJ-60 HYB5117805BSJ-50 HYB5117805-60 HYB5117805-50 HYB3117805-60 HYB3117805-50 HB17805C Q67100-Q1104 HYB5117805BSJ-50-60
Description 2M x 8 Bit 2k 5 V 60 ns EDO DRAM
2M x 8 Bit 2k 3.3 V 60 ns EDO DRAM
-2M x 8 - Bit Dynamic RAM 2k refresh
2M x 8-Bit Dynamic RAM 2k refresh (Hyper Page Mode-EDO)
From old datasheet system

File Size 175.17K  /  23 Page

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    Samsung Electronic
SAmsUNG[Samsung semiconductor]
Part No. M366S3253BTS-C75 M366S3253BTS
Description 32MB x 64 SDRAM DIMM based on 32MB x 8, 4Banks, 8kB refresh, 3.3V Synchronous DRAms with SPD Data Sheet
32Mx64 SDRAM DIMM based on 32Mx8, 4Banks, 8k refresh, 3.3V Synchronous DRAms with SPD

File Size 151.31K  /  10 Page

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Part No. HR5 HR12 HR15 HRL9 HRL15 HRL12
Description Analog IC
Mount Type: Through-hole; Current Rating(Amps)(Max.): 3; Rated Voltage(VAC): 350; Mating/Unmating cycles: 500; Operating Temperature Range (degrees C

File Size 62.93K  /  1 Page

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    P30LL0APPS102MA P30LM0APPS102MA P30LLEAPPS102MA P30LMEAPPS102MA P30LLLAPPS102MA P30LMLAPPS102MA P30LL0FJD102MA P30LM0FJD

http://
Vishay Siliconix
Part No. P30LL0APPS102MA P30LM0APPS102MA P30LLEAPPS102MA P30LMEAPPS102MA P30LLLAPPS102MA P30LMLAPPS102MA P30LL0FJD102MA P30LM0FJD102MA P30LLEFJD102MA P30LMEFJD102MA P30LLLFJD102MA P30LMLFJD102MA P30LL0APJD102MA P30LM0APJD102MA P30LLEAPJD102MA P30LMEAPJD102MA P30LLLAPJD102MA P30LMLAPJD102MA P30LL0APGF102MA P30LM0APGF102MA P30LLEAPGF102MA P30LMEAPGF102MA P30LLLAPGF102MA P30LMLAPGF102MA P30LL0FJS102MA P30LM0FJS102MA P30LLEFJS102MA P30LMEFJS102MA P30LLLFJS102MA P30LMLFJS102MA P30LL0APJS102MA P30LM0APJS102MA P30LLEAPJS102MA P30LMEAPJS102MA P30LLLAPJS102MA P30LMLAPJS102MA P30LL0APPD102MA P30LM0APPD102MA P30LLEAPPD102MA P30LMEAPPD102MA P30LLLAPPD102MA P30LMLAPPD102MA P30LL0APPF102MA P30LM0APPF102MA P30LLEAPPF102MA P30LMEAPPF102MA P30LLLAPPF102MA P30LMLAPPF102MA P30LL0APPR102MA P30LM0APPR102MA P30LLEAPPR102MA P30LMEAPPR102MA P30LLLAPPR102MA P30LMLAPPR102MA P30LLEAPDD102MA P30LLEAPDF102MA P30LLEAPDR102MA P30LLEAPDR502MA P30LLEAPDS102MA P30LLEAPGD102MA P30LLEAPGR102MA P30LLEAPGR502MA P30LLEAPGS102MA P30LLEAPJF102MA P30LLEAPJR102MA P30LLEAPJR502MA P30LLEAPLD102MA P30LLEAPLF102MA P30LLEAPLR102MA P30LLEAPLR502MA P30LL0FLD102MA P30LL0APRD102MA P30LM0APRD102MA P30LLEAPRD102MA P30LMEAPRD102MA P30LLLAPRD102
Description    Long Life Potentiometer - 1 Million cycles Heavy Duty - Cermet Fully Sealed

File Size 129.51K  /  5 Page

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    Infineon
SIEMENS[Siemens Semiconductor Group]
Part No. HYB5118160BSJ-60 HYB5118160BSJ-50 HYB3118160 HYB3118160BSJ-60 Q67100-Q1073 HYB3118160BSJ-50 HYB5118160BSJ-50- Q67100-Q1072
Description 1M x 16 Bit 5 V 60 ns FPM DRAM
1M x 16 Bit 5 V 50 ns FPM DRAM
1M x 16-Bit Dynamic RAM 1k refresh (Fast Page Mode)
1M*16-Bit Dynamic RAM 1k refresh

File Size 190.00K  /  24 Page

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    Samsung Semiconductor Co., Ltd.
SAmsUNG SEMICONDUCTOR CO. LTD.
SAmsUNG[Samsung semiconductor]
Samsung Electronic
Part No. M464S1724DTS-C1H M464S1724DTS-L7C M464S1724DTS M464S1724DTS-C1L M464S1724DTS-C7A M464S1724DTS-C7C M464S1724DTS-L1H M464S1724DTS-L1L M464S1724DTS-L7A
Description 16Mx64 SDRAM SODIMM based on 8Mx16,4Banks,4K refresh,3.3V Synchronous DRAms with SPD 16Mx64M × 16位的SODIMM内存BanksK的刷新,3.3V的同步DRAM的社民党
16Mx64 SDRAM SODIMM based on 8Mx16 / 4Banks /4K refresh / 3.3V Synchronous DRAms with SPD
16Mx64 SDRAM SODIMM based on 8Mx164Banks4K refresh3.3V Synchronous DRAms with SPD
16Mx64 SDRAM SODIMM based on 8Mx16,4Banks,4K refresh,3.3V Synchronous DRAms with SPD Data Sheet

File Size 86.61K  /  11 Page

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    Cypress Semiconductor, Corp.
Part No. CY14B256PA-SFXIT
Description 32K X 8 NON-VOLATILE SRAM, PDSO16 0.300 INCH, ROHS COMPLIANT, MO-119, SOIC-16
256-Kbit (32 K x 8) SPI nvSRAM with Real Time Clock Infinite read, write, and RECALL cycles

File Size 1,396.16K  /  44 Page

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    Samsung Electronic
Part No. KM41C4000DLJ-6 KM41V4000DLJ-6 KM41V4000DLJ-7 KM41C4000DLJ-5 KM41C4000DLJ-7
Description 4M x 1Bit CMOS dynamic RAM with fast page mode, 5V, 128ms refresh, 60ns
4M x 1Bit CMOS dynamic RAM with fast page mode, 3.3V, 128ms refresh, 60ns
4M x 1Bit CMOS dynamic RAM with fast page mode, 3.3V, 128ms refresh, 70ns
4M x 1Bit CMOS dynamic RAM with fast page mode, 5V, 128ms refresh, 50ns
4M x 1Bit CMOS dynamic RAM with fast page mode, 5V, 128ms refresh, 70ns

File Size 339.73K  /  20 Page

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For 8k refresh cycles every 64 ms Found Datasheets File :: 150+       Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | <9> | 10 | 11 | 12 | 13 | 14 | 15 |   

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