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TOSHIBA[Toshiba Semiconductor]
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Part No. |
TLP321 TLP321-2 TLP321-4
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OCR Text |
...4 16 15 14 13 12 11 10 9
1 : anode 2 : CATHODE 3 : EMITTER 4 : COLLECTOR
TOSHIBA Weight: 0.54g
11-10C4
5
4 5 6 7 8
1,3 : anode 2,4 : CATHODE 5,7 : EMITTER 6,8 : COLLECTOR
1,3,5,7 : anode 2,4,6,8 : CATHODE 9,11,13,15 : E... |
Description |
TOSHIBA Photocoupler GaAs Ired & Photo Transistor TOSHIBA Photocoupler GaAs Ired & Photo-Transistor TOSHIBA Photocoupler GaAs Ired & Photo−Transistor Photocoupler GaAs Ired & Photo .Transistor
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File Size |
216.08K /
9 Page |
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it Online |
Download Datasheet
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Infineon
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Part No. |
SIDC81D120F6
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OCR Text |
...total / active 81 / 69.39 anode pad size 8.28 x 8.28 mm 2 thickness 120 m wafer size 150 mm flat position 180 deg max. possible chips per wafer 169 pcs passivation frontside photoimide anode metallis... |
Description |
Diodes - HV Chips - SIDC81D120F6, 1200V, 100A
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File Size |
62.18K /
4 Page |
View
it Online |
Download Datasheet
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Infineon
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Part No. |
SIDC81D120E6
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OCR Text |
...total / active 81 / 69.39 anode pad size 8.28 x 8.28 mm 2 thickness 130 m wafer size 150 mm flat position 180 deg max. possible chips per wafer 169 pcs passivation frontside photoimide anode metallis... |
Description |
Diodes - HV Chips - SIDC81D120E6, 1200V,100A
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File Size |
62.29K /
4 Page |
View
it Online |
Download Datasheet
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Price and Availability
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