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AUG04A48 FST7335M HTDF20J MICRO 064002 194272 B80N0 MAX6659
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For compound Found Datasheets File :: 13011    Search Time::1.343ms    
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    EUDYNA[Eudyna Devices Inc]
Part No. FRM5W621LT FRM5W621KT
OCR Text ...ct: FRM5W621KT/LT FUJITSU compound SEMICONDUCTOR, INC. Americas & R.O.W. 2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. Phone: (408) 232-9500 FAX: (408) 428-9111 55 Schanck Road, Suite A-2 Freehold, NJ 07728-2964, U.S.A. Phone: (732...
Description InGaAs-APD/Preamp Receiver

File Size 177.37K  /  5 Page

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    EUDYNA[Eudyna Devices Inc]
Part No. FSU01LG
OCR Text ...rmation please contact: FUJITSU compound SEMICONDUCTOR, INC. 2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. Phone: (408) 232-9500 FAX: (408) 428-9111 www.fcsi.fujitsu.com FUJITSU MICROELECTRONICS EUROPE, GmbH Quantum Devices Division Netwo...
Description General Purpose GaAs FET

File Size 104.27K  /  5 Page

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    HI-SINCERITY MICROELECTRONICS, CORP.
HSMC CORP.
Hi-Sincerity Mocroelectronics Corp.
HSMC[Hi-Sincerity Mocroelectronics]
Part No. H02N60J H02N60 H02N60E H02N60F H02N60I
OCR Text ...Cu or Pure-Tin (Pb-free) * Mold compound: Epoxy resin family, flammability solid burning class: UL94V-0 DIM A C F G H L M N a1 a2 a5 Min. 6.35 4.80 1.30 5.40 2.20 0.40 2.20 0.90 0.40 0.65 Max. 6.80 5.50 1.70 6.25 3.00 0.90 2.40 1.5...
Description N-Channel Power Field Effect Transistor N沟道功率场效应晶体管

File Size 73.75K  /  6 Page

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    HSMC CORP.
HSMC[Hi-Sincerity Mocroelectronics]
Hi-Sincerity Mocroelectronics Corp.
Part No. H02N60SJ H02N60S H02N60SE H02N60SF H02N60SI
OCR Text ...Cu or Pure-Tin (Pb-free) * Mold compound: Epoxy resin family, flammability solid burning class: UL94V-0 DIM A C F G H L M N a1 a2 a5 Min. 6.35 4.80 1.30 5.40 2.20 0.40 2.20 0.90 0.40 0.65 Max. 6.80 5.50 1.70 6.25 3.00 0.90 2.40 1.5...
Description N-Channel Power Field Effect Transistor

File Size 73.82K  /  6 Page

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    IRF[International Rectifier]
Part No. 40MT120UH 40MT120UHT
OCR Text ... 3 10% 66 Nm g (oz) (Heatsink compound Thermal Conductivity = 1 W/mK) Min - 40 - 40 Typ Max 150 125 Units C C/ W 0.20 0.39 0.06 0.27 0.59 Clearance (external shortest distance in air between two terminals) mm ...
Description 1200V UltraFast 10-30 kHz Half-Bridge IGBT in a MTP package
HALF-BRIDGE IGBT MTP UltraFast NPT IGBT

File Size 673.49K  /  13 Page

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    International Rectifier, Corp.
IRF[International Rectifier]
http://
Part No. IRKTF72-12HKN IRKTF71-12HJ IRKTF71-12HJN IRKTF71-12HK IRKTF71-12HKN IRKTF72 IRKTF72-12HJ IRKTF72-12HJN IRKTF72-12HK IRKHF72-08HK IRKLF72-06HJ IRKTF72-06HK IRKHF72-12HJ IRKHF72-12HK IRKLF72-12HJ IRKTF72-08HJ IRKTF72-08HK
OCR Text ... greased Per module A mounting compound is recommended. The torque should be rechecked after a period of 3 hours to allow for the spread of the compound. Use of cable lugs is (lb*in) not recommendd, busbars should be used and restrained du...
Description FAST THYRISTOR/DIODE and THYRISTOR/THYRISTOR 快速晶闸管/二极管和晶闸晶闸
800V Doubler Circuit Positive Control Inverter Thyristor/Thyristor in a INT-A-Pak package
1200V Doubler Circuit Positive Control Inverter Thyristor/Thyristor in a INT-A-Pak package
1200V Doubler Circuit Negative Control Inverter Thyristor/Diode in a INT-A-Pak package
1200V Doubler Circuit Positive Control Inverter Thyristor/Diode in a INT-A-Pak package
600V Doubler Circuit Positive Control Inverter Thyristor/Thyristor in a INT-A-Pak package
600V Doubler Circuit Negative Control Inverter Thyristor/Diode in a INT-A-Pak package
800V Doubler Circuit Positive Control Inverter Thyristor/Diode in a INT-A-Pak package

File Size 186.20K  /  8 Page

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    International Rectifier, Corp.
IRF[International Rectifier]
Part No. IRKTF82-08HNN IRKTF81-04HL IRKTF81-04HLN IRKTF81-04HN IRKTF81-04HNN IRKTF81-08HL IRKTF81-08HLN IRKTF81-08HN IRKTF81-08HNN IRKTF82 IRKTF82-04HL IRKTF82-04HLN IRKTF82-04HN IRKTF82-04HNN IRKTF82-08HL IRKTF82-08HLN IRKTF82-08HN IRKLF82-08HN IRKHF82-08HN
OCR Text ... greased Per module A mounting compound is recommended. The torque should be rechecked after a period of 3 hours to allow for the spread of the compound. Use of cable lugs is (lb*in) not recommendd, busbars should be used and restrained du...
Description FAST THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR 快速晶闸管/二极管和晶闸晶闸
800V Doubler Circuit Negative Control Inverter Thyristor/Diode in a INT-A-Pak package
800V Doubler Circuit Positive Control Inverter Thyristor/Diode in a INT-A-Pak package
800V Doubler Circuit Positive Control Inverter Thyristor/Thyristor in a INT-A-Pak package

File Size 119.94K  /  8 Page

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    Vishay Semiconductors
IRF[International Rectifier]
Part No. 20MT120UF 20MT120UFPBF
OCR Text ... 3 10% 66 Nm g (oz) (Heatsink compound Thermal Conductivity = 1 W/mK) Min - 40 - 40 Typ Max 150 125 Units C C/ W 0.35 0.40 0.06 0.52 0.61 Clearance (external shortest distance in air between two terminals) mm ...
Description 40 A, 1200 V, N-CHANNEL IGBT MTP, 18 PIN
UltraFast NPT IGBT
1200V UltraFast 10-30 kHz Full-Bridge IGBT in a MTP package

File Size 694.93K  /  13 Page

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    IRF[International Rectifier]
Part No. 200MT40KB
OCR Text ...oth, flat and greased. Heatsink compound thermal conductivity = 0.42W/mK A mounting compound is recommended and the torque should be rechecked after a period of 3 hours to allow for the spread of the compound. Lubricated threads. 200MT40...
Description 400V 3 Phase Bridge in a INT-A-Pak package
THREE PHASE BRIDGE

File Size 70.43K  /  6 Page

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    CYSTEKEC[Cystech Electonics Corp.]
Part No. LM1114-5.0N3 LM1114 LM1114-2.5A3 LM1114-2.5M3 LM1114-2.5N3 LM1114-3.0A3 LM1114-3.0M3 LM1114-3.0N3 LM1114-3.3A3 LM1114-3.3M3 LM1114-3.3N3 LM1114-3.6A3 LM1114-3.6M3 LM1114-3.6N3 LM1114-5.0A3 LM1114-5.0M3
OCR Text ...2 Alloy ; solder plating * Mold compound: Epoxy resin family, flammability solid burning class: UL94V-0 LM1114N3 CYStek Product Specification CYStech Electronics Corp. SOT-23 Dimension Spec. No. : C505N3 Issued Date : 2003.03.2...
Description Low Dropout CMOS Voltage Regulators

File Size 176.77K  /  6 Page

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For compound Found Datasheets File :: 13011    Search Time::1.343ms    
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