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WIMA
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| Part No. |
AMMP-5024-BLKG
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| OCR Text |
...th by application of additional conjugate, linearity, or low noise matching. 2. all tested parameters guaranteed with measurement accuracy 0.5 db for gain. 3. rfin1 = rfin2 = -5 dbm, freq = 22ghz, d f = 100mhz table 4. rf specifcations ... |
| Description |
0.03 MHz - 40000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER 5 X 5 MM, 2 MM HEIGHT, ROHS COMPLIANT, SMT, 8 PIN
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| File Size |
647.77K /
11 Page |
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Freescale (Motorola)
Freescale Semiconductor Inc (Motorola)
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| Part No. |
MRF281 MRF281ZR1
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| OCR Text |
... j10.1 12.2 - j9.2
= Complex conjugate of source impedance.
ZOL* = Complex conjugate of the optimum load impedance at given output power, voltage, IMD, bias current and frequency.
Input Matching Network
Device Under Test
Outp... |
| Description |
2000 MHz, 4 W, 26 V Lateral N–Channel Broadband RF Power MOSFET
TRANSISTOR,MOSFET,N-CHANNEL,65V V(BR)DSS,SOT-391BVAR
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| File Size |
486.04K /
8 Page |
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it Online |
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MOTOROLA[Motorola, Inc]
MOTOROLA[Motorola Inc]
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| Part No. |
MRF9030 MRF9030R1 MRF9030SR1
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| OCR Text |
... j0.08 3.0 + j0.05
= Complex conjugate of source impedance.
ZOL* = Complex conjugate of the optimum load impedance at a given output power, voltage, IMD, bias current and frequency. Note: ZOL* was chosen based on tradeoffs between gai... |
| Description |
RF POWER FIELD EFFECT TRANSISTORS
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| File Size |
399.67K /
12 Page |
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it Online |
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Motorola Mobility Holdings, Inc.
MOTOROLA[Motorola, Inc]
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| Part No. |
MRF9100R3 MRF9100 MRF9100SR3
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| OCR Text |
...j1.82 1.58 - j1.52
= Complex conjugate of source impedance.
ZOL* = Complex conjugate of the optimum load impedance at a given output power, voltage, IMD, bias current and frequency. Note: ZOL* was chosen based on tradeoffs between gai... |
| Description |
GSM/EDGE 900 MHz, 110 W, 26 V LATERAL N-CHANNEL RF POWER MOSFETs UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
MRF9100, MRF9100R3, MRF9100SR3 GSM/EDGE 900 MHz, 110 W, 26 V Lateral N-Channel RF Power MOSFETs
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| File Size |
390.38K /
12 Page |
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it Online |
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Motorola
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| Part No. |
MRF1550T1
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| OCR Text |
...le semiconductor z in = complex conjugate of source impedance. z ol * = complex conjugate of the load impedance at given output power, voltage, frequency, and d > 50 %. f mhz z in ? z ol * ? 135 4.1 + j0.5 1.0 + j0.6 ... |
| Description |
MRF1550T1, MRF1550FT1 175 MHz, 50 W, 12.5 V Lateral N-Channel Broadband RF Power MOSFETs
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| File Size |
211.52K /
12 Page |
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it Online |
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Motorola
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| Part No. |
MRF652260D
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| OCR Text |
...es !& !& z in = conjugate of source impedance. z out = conjugate of the load impedance at a given output power, voltage, frequency and efficiency. ' - # - '#)&
9 mrf652260 motorola rf device data notes
mrf6522... |
| Description |
MRF6522-60 RF Power Transistor
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| File Size |
155.45K /
12 Page |
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it Online |
Download Datasheet |
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Price and Availability
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