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gate-drive-transformer Datasheet PDF File

For gate-drive-transformer Found Datasheets File :: 3267 Search Time::1.61ms
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				IRF[International Rectifier]
Part No.	IRLBA1304 IRLBA1304P
OCR Text	Gate Drive Ultra Low On-Resistance Same outline as TO-220 50% greater current in typ. application conditions vs. TO-220 Fully Avalanche Rated Purchase IRLBA1304/P for solder plated option. D VDSS = 40V RDS(on) = 0.004 G ID = 18...
Description	HEXFET? Power MOSFET
File Size	103.65K / 8 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRLI2910
OCR Text	Gate Drive Advanced Process Technology l Ultra Low On-Resistance l Isolated Package l High Voltage Isolation = 2.5KVRMS l Sink to Lead Creepage Dist. = 4.8mm l Fully Avalanche Rated Description l l IRLI2910 HEXFET(R) Power MOSFET D ...
Description	HEXFET Power MOSFET
File Size	140.03K / 8 Page	View it Online	Download Datasheet

				IRF[International Rectifier] International Rectifier, Corp.
Part No.	IRLU9343-701 IRLR9343 IRLU9343
OCR Text	... per silicon area. Furthermore, Gate charge, body-diode reverse recovery and internal Gate resistance are optimized to improve key Class-D a...Drive + P.W. Period D= P.W. Period VGS=10V + Circuit Layout Considerations * ...
Description	-55V Single P-Channel HEXFET Power MOSFET in a D-Pak package -55V Single P-Channel HEXFET Power MOSFET in a I-Pak package DIGITAL AUDIO MOSFET DIODE MED-FAST BAS116 80VR 250MA 1.25VF@150MA 1.5US TO-236AB -55 150C 数字音频MOSFET
File Size	242.32K / 10 Page	View it Online	Download Datasheet

				IRF[International Rectifier] International Rectifier, Corp.
Part No.	IRFP250N IRFP250
OCR Text	...sipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diod...Drive P.W. Period D= P.W. Period VGS=10V * D.U.T. ISD Waveform Reverse Recovery Current Bod...
Description	Power MOSFET(Vdss = 200 V, Rds(on)=0.075ohm, Id=30A) N-Channel(Hexfet Transistors) Power MOSFET(Vdss = 200 V Rds(on)=0.075ohm Id=30A) Power MOSFET(Vdss = 200 V, Rds(on)=0.075ohm, Id=30A) 功率MOSFET（减振钢板基本\u003d 200第五的Rdson）\u003d 0.075ohm，身份证\u003d 30A条）
File Size	120.07K / 8 Page	View it Online	Download Datasheet

				SIEMENS[Siemens Semiconductor Group] Infineon
Part No.	Q67000-A9284-X201-K5 TDA16888 TDA16888G Q67000-A9310-A702
OCR Text	...Fast, soft switching totem pole gate drive (1 A) Dual loop control (average current and voltage sensing) Leading edge triggered pulse width modulation Peak current limitation Topologies of PFC preconverter are boost or flyback Continuous/di...
Description	High Performance Power Combi Controller
File Size	318.96K / 39 Page	View it Online	Download Datasheet

				http:// VISAY[Vishay Siliconix]
Part No.	SI9120 SI9120DJ SI9120DJ-E3 SI9120DY SI9120DY-T1 SI9120DY-T1-E3
OCR Text	...itching for MOSFET devices with gate charge, Qg, up to 25 nC, enough to supply 30 W of output power at 100 kHz. These devices, when combined...drive voltage is available before the MOSFET turns on. The design of the IC is such that the undervo...
Description	Universal Input Switchmode Controller
File Size	82.24K / 6 Page	View it Online	Download Datasheet

				VISAY[Vishay Siliconix]
Part No.	SI9122 SI9122DQ-T1
OCR Text	...on, Si9122 provides intelligent gate drive signals to control the secondary MOSFETs. With independent gate drive signals from the controller, transformer design is no longer limited by the gate to a source rating of the MOSFETs. Si9122 prov...
Description	500-kHz Half-Bridge DC-DC Converter With Integrated Secondary Synchronous Rectification Drivers
File Size	214.78K / 17 Page	View it Online	Download Datasheet

				IRF[International Rectifier] International Rectifier, Corp.
Part No.	IRFRU9310 IRFU9310 IRFR9310
OCR Text	...sipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diod...Drive P.W. Period D= P.W. Period [VGS=10V ] *** D.U.T. ISD Waveform Reverse Recovery Curren...
Description	-400V Single P-Channel HEXFET Power MOSFET in a I-Pak package Power MOSFET(Vdss=-400V, Rds(on)=7.0ohm, Id=-1.8A) 功率MOSFET（减振钢板基本\u003d-00V，的Rds（on）\u003d 7.0ohm，身份证\u003d- 1.8A
File Size	110.22K / 10 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRLU8203PBF IRLR8203PBF IRLR8203
OCR Text	... l Lead-Free Benefits Ultra-Low Gate Impedance l Very Low RDS(on) at 4.5V VGS l Fully Characterized Avalanche Voltage and Current l VDSS...Drive P.W. Period D= P.W. Period VGS=10V * D.U.T. ISD Waveform Reverse Recovery Current Bod...
Description	SMPS MOSFET
File Size	266.57K / 10 Page	View it Online	Download Datasheet

For gate-drive-transformer Found Datasheets File :: 3267 Search Time::1.61ms
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