ghz-2.655 pdf Datasheet P9 Full Text Search --- IC-ON-LINE


	Part Number	Hot Search : LFC32F1 7SMTL 03A50 SP486EET X6733 PEM002 MURS360S LN416YPH
	Product Description
	Full Text Search

ghz-2.655 Datasheet PDF File

For ghz-2.655 Found Datasheets File :: 231 Search Time::1.719ms
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | <9> | 10 | 11 | 12 | 13 | 14 | 15 |

				California Eastern Labs
Part No.	NE5520279A NE5520279A-T1-A
OCR Text	...DDED EFFICIENCY: 45% TYP at 1.8 GHz * SINGLE SUPPLY: 2.8 to 6.0 V A 0.40.15 5.7 MAX. 0.80.15 1.0 MAX. 0.8 MAX. 3.60.2 DESCRIPTION NEC's NE5520279A is an N-Channel silicon power laterally diffused MOSFET specially designe...
Description	3.2 V, 2 W, L&S BAND MEDIUM POWER SILICON LD-MOSFET
File Size	265.19K / 8 Page	View it Online	Download Datasheet

				Toshiba Semiconductor
Part No.	2SC5087-O 2SC5087-Y
OCR Text	....1db, \|s 21e \| 2 = 13db (f = 1 ghz) absolute maximum ratings (ta = 25c) characteristics symbol rating unit collector-base voltage v cbo 20 v collector-emitter voltage v ceo 12 v emitter-base voltage v ebo 3 v base curren...
Description	VHF~UHF Band Low Noise Amplifier Applications
File Size	155.91K / 7 Page	View it Online	Download Datasheet

				NJRC[New Japan Radio] New Japan Radio Co., Ltd.
Part No.	NJG1102F1 NJG1103F1-C2 NJG1103F1-L4 NJG1103F1-L1 NJG1103F1-L2 NJG1103F1-L3
OCR Text	... -50 1.4 1.6 1.8 2 frequency(GHz) frequency(GHz) Pin vs. Pout (V =2.7V,I =3mA,f=820MHz) 10 5 0 -5 -10 -15 -20 -25 -30 -40 DD DD Pin vs. Pout,IM3 (V =2.7V,I =3mA,f=820+820.1MHz) 10 0 -10 DD DD Pout P-1dB=+0.8dBm Po...
Description	LOW NOISE AMPLIFIER GaAs MMIC
File Size	138.01K / 8 Page	View it Online	Download Datasheet

				Siemens Semiconductor Group
Part No.	BFQ82
OCR Text	...e, high-gain amplifiers up to 2 ghz. l linear broadband applications at collector currents up to 40 ma. l hermetically sealed ceramic package. l f t = 8 ghz f = 1.1 db at 800 mhz electrical characteristics at t a = 25 ?c, unless otherw...
Description	NPN Silicon RF Transistor (For low-noise/ high-gain amplifiers up to 2 GHz. Linear broadband applications at collector currents up to 40 mA.)
File Size	403.68K / 18 Page	View it Online	Download Datasheet

				TriQuint Semiconductor, Inc.
Part No.	TGF2022-12
OCR Text	... 30 35 0246810121416 frequency (ghz) maximum gain (db) mag msg dc - 20 ghz discrete power phemt tgf2022-12 key features a...2-12 is a discrete 1.2 mm phemt which operates from dc-20 ghz. the tgf2022-12 is designed using ...
Description
File Size	119.29K / 8 Page	View it Online	Download Datasheet

				Eudyna Devices Inc
Part No.	FLM1011-6F
OCR Text	...0.6 IDSS(Typ.), f = 10.7 ~ 11.7 GHz, ZS = ZL = 50 Test Conditions VDS = 5V, VGS = 0V VDS = 5V, IDS = 1800mA VDS = 5V, IDS = 120mA IGS = -120...2-tone test 30 28 26 24 22 IM3 Total Power Dissipation (W) 40 Output Power (S.C.L.) (dBc)...
Description	KU BAND, GaAs, N-CHANNEL, RF POWER, JFET X, Ku-Band Internally Matched FET
File Size	293.83K / 4 Page	View it Online	Download Datasheet

				Eudyna Devices Inc
Part No.	FLK027WG
OCR Text	...IDS = 0.6 IDSS (Typ.), f = 14.5 GHz Min. -1.0 -5 23.0 6.0 Channel to Case Limit Typ. Max. 100 50 -2.0 24.0 7.0 32 24 8 34 40 150 -3.5 80 Unit mA mS V V dBm dB % dBm dB % C/W VDS = 10V, IDS = 0.6 IDSS (Typ.), f = 12 GHz G.C.P.: Gain Co...
Description	X, Ku Band Power GaAs FET
File Size	79.11K / 4 Page	View it Online	Download Datasheet

				Eudyna Devices Inc
Part No.	FSX017LG
OCR Text	... S12 4 0.1 6 2 +j250 0.5 GHz +j10 0 12 25 50 100 18 250 0.5 GHz 180 4 3 20 0.5 GHz 8 12 16 18 16 18 4 8 SCALE FOR \|S21\| 20 0 6 10 8 6 4 4 20 2 10 0.5 GHz -j10 -j250 ...
Description	General Purpose GaAs FET
File Size	76.30K / 4 Page	View it Online	Download Datasheet

For ghz-2.655 Found Datasheets File :: 231 Search Time::1.719ms
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | <9> | 10 | 11 | 12 | 13 | 14 | 15 |