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NTE Electronics, Inc. NTE[NTE Electronics]
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Part No. |
NTE37 NTE36
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OCR Text |
High Current Switch
Description: The NTE36 (NPN) and NTE37 (PNP) are silicon complementary transistors in a TO3P type case designed for af ...hFE) matched to within 10% of each other.
.190 (4.82)
.615 (15.62)
.670 (17.0) Max
.197 ... |
Description |
Silicon Complementary Transistors af Power Amplifier, High Current Switch
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File Size |
23.00K /
2 Page |
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it Online |
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SIEMENS AG Infineon SIEMENS[Siemens Semiconductor Group]
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Part No. |
BCX42 BSS63 Q62702-S534 Q62702-C1485
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OCR Text |
High breakdown voltage q Low collector-emitter saturation voltage q Complementary types: BCX 41, BSS 64 (NPN)
q
BCX 42 BSS 63
Type BC...hFE 25 30 30 63 40 - - - - - - - - - - V - - - - - - 10 75 100 nA - V(BR)CE0 125 100 V(BR)CB0 125 11... |
Description |
From old datasheet system PNP SILICON af AND SWITCHING TRANSISTORS (FOR GENERAL af APPLICATIONS HIGH BREAKDOWN VOLTAGE)
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File Size |
139.49K /
4 Page |
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it Online |
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INFINEON[Infineon Technologies AG]
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Part No. |
BC846PN
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OCR Text |
High current gain Low collector-emitter saturation voltage Two (galvanic) internal isolated NPN/PNP Transistors in one package
5 6
Tap...hFE ICBO ICBO V(BR)EBO V(BR)CES V(BR)CBO V(BR)CEO typ. max.
Unit
65 80 80 5 -
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15 5
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Description |
High Speed CMOS Logic 10-to-4 Line Priority Encoder 16-PDIP -55 to 125 NPN/PNP Silicon af Transistor Array
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File Size |
58.72K /
6 Page |
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http:// INFINEON[Infineon Technologies AG]
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Part No. |
BC856S
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OCR Text |
High current gain Low collector-emitter saturation voltage Two ( galvanic) internal isolated Transistors with good matching in one package
...hFE 200 250 290 475 ICBO 5 ICBO 15 V(BR)EBO 5 V(BR)CES 80 V(BR)CBO 80 V(BR)CEO 65 typ. max.
Unit
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Description |
PNP Silicon af Transistor Array
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File Size |
56.89K /
6 Page |
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it Online |
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Price and Availability
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